NM29A080EM

NM29A040 080 4-Mbit 8-Mbit CMOS Serial FLASH E2PROM February 1996 NM29A040 080 4-Mbit 8-Mbit CMOS Serial FLASH E2PROM General Description The NM29A040 080 are 4-Mbit and 8-Mbit Flash memories designed with a MICROWIRETM serial interface All of the features of the device are designed to provide the most cost effective solution for applications requiring low bandwidth file storage Examples of these applications include digital answering machines and personal digital recorders (digital audio) or FAX and digital scanners (digital imaging) The Serial Flash requires only a single 5V power supply has a small erase block size (4 kbytes) and a low EMI serial interface The NM29A040 080 have been designed to work seamlessly with National’s CompactRISCTM family (e g NSAM266) of processors In this manner National is able to provide the complete system solution to digital audio recording (processor CODEC Flash memory software) or digital imaging Features Y Y Y Y Y Y Y Single 5V g 10% power supply 4 kbyte erase block Organized as 128 (256) Blocks per 4-Mbit (8-Mbit) Device 128 pages per block 32 bytes per page (256 bits) MICROWIRETM compatible interface Low operating current (typical) 5 mA read current 15 mA write current 10 mA erase current 5 mA standby current 100k write erase cycle endurance Offered in PLCC and SOIC packages Block Diagram TL D 12475 – 1 TRI-STATE is a registered trademark of National Semiconductor Corporation MICROWIRETM SpeechProTM CompactRISCTM and CompactSPEECHTM are trademarks of National Semiconductor Corporation C1996 National Semiconductor Corporation TL D 12475 RRD-B30M36 Printed in U S A http www national com Connection Diagrams Plastic Chip Carrier (V) Ordering Information Commercial Temperature Range (0 C to a 70 C) Order Number NM29A040V NM29A040M NM29A080V NM29A080M Extended Temp Range (b40 C to a 85 C) Order Number NM29A040EV NM29A040EM NM29A080EV NM29A080EM TL D 12475–2 NM29A040V NS Package Number V28A Pin Functions SERIAL DATA INPUT DI The DI pin is used for transferring in commands and data Data is latched on the rising edge of SK SERIAL DATA OUT DO The DO pin is used for transferring out status and data Data output will change following the falling edge of SK CHIP SELECT CS This signal indicates which device is selected When this signal is inactive the device ignores SK This signal can be tied to ground when there is only one Serial Flash device The CS pin may be pulled high to reset command input SERIAL DATA CLOCK SK This is the standard synchronous MICROWIRE clock which determines the rate of data transfer On each toggle one data bit is shifted into or out of the Serial Flash Small Outline Package (M) TL D 12475–3 NM29A040M NM29A080M NS Package Number MA28A Pin Assignments DO DI SK CS NC Serial Data Output Serial Data Input Serial Data Clock Chip Select TL D 12475 – 22 No Connection NM29A080V NS Package Number VA32A http www national com 2 System Concepts The NM29A040 080 are 4-Mbit and 8-Mbit NAND Flash designed to provide the most cost effective solution for file storage applications These applications include digital audio recording digital image storage and data logging applications For digital audio storage the NM29A040 080 have been matched with National’s NSAM266 voice processor Applications that can benefit from this combination include digital answering machines personal digital recorders pagers and voicemail systems When combined with National Semiconductor’s CompactSPEECHTM embedded software and the NSAM266 processor customers can quickly bring to market systems capable of recording up to 15 minutes of audio on a single 4 Mb device Multiple NM29A040 080’s can be used to extend the record time up to 2 hours Digital imaging applications include FAX machines handheld scanners and digital cameras Combining the NM29A040 080 with the CompactRISC family of embedded processors can enable complete solutions for image storage Data logging applications can take advantage of the NM29A040 080’s simple interface and nonvolatility to allow simple 8-bit microcontroller based systems to have access to over 4 Mb of storage The nonvolatility ensures data integrity in remote battery powered applications TL D 12475 – 4 FIGURE 1 Digital Audio Recording Solution TABLE I Data Transfer Rates Transfer Rates Page Read Write Erase 1 02 Mbits s (127 5 kbytes s) 406 3 kbits s (50 8 kbytes s) Block 2 61 Mbits s (325 8 kbytes s) 536 4 kbits s (67 1 kbytes s) Total Time Page 251 ms 630 ms Block 12 6 ms 61 1 ms 6 ms 3 http www national com Device Operation The basic functions required for storing messages or images on the NM29A040 080 are Page Read Page Write and Block Erase These functions can be implemented by combining the different instructions for the NM29A040 080 in the following sequences PAGE READ Page Read will read out the 32 bytes of a page for the specified address To continue reading the page at the next address an Increment command (90H) can be issued In this way the system can avoid repeatedly using the three byte Set-Address command The Increment command is then followed by the Read command and proceeds in the same manner as shown in Figure 2 PAGE WRITE Page Write sequence will write up to 32 bytes into a specified page Like the Page Read sequence the Increment command can be used to quickly set the address to the next page for writing data sequentially into a block TL D 12475 – 6 FIGURE 3 Page Write Sequence TL D 12475–5 FIGURE 2 Page Read Sequence http www national com 4 Device Operation (Continued) BLOCK ERASE The Block Erase sequence erases a specified block (4 kB) of data Flash memory devices require that a block be in an erased state prior to writing to a memory cell In this manner a block must be erased prior to the recording of any messages or storage of any images reading out the same page the first bit shifted in will be the first bit shifted out If for example only 5 bytes are shifted in written to the array and then the same page is read out 27 bytes should be shifted out before the original 5 bytes will be shifted out See Note 4 in the notifications section for an explanation of multiple page writes and masking TL D 12475 – 9 FIGURE 6 Block Organization WRITE ONCE BLOCK The NM29A040 contains 127 blocks (blocks 0 thru block 126) which are fully accessible to the user for reading writing and erasing The final block number 127 has been set aslde as a write once block The pages in this block may only be written to once Once the data is written it may not be erased In this manner block 127 may be used for storing system configuration information that cannot be lost The NM29A080 operates in a similar manner but has 253 blocks that are fully accessible Block 254 contains the unusable block information although this block has 256 pages as opposed to the standard 128 pages The last block is not accessible through the normal Read and Write commands Special commands for Read (D0H) and Write (F0H) are used to perform the last block operations An erase operation is not available or usable on the last block DATA REGISTER The data register is a 32-byte FIFO that is used to shift data into or out of the device When a write operation is performed all 32 bytes are written to the currently addressed page Refer to Note 4 for how to write less than 32 bytes to a page The data register may be used as an on-chip holding area for partial page data For example if data is acquired externally in 8-byte multiples the data register can be used to hold each 8-byte segment After the 4th such data segment an entire page of data will have been accumulated at which point the write command mat be issued No data may be shifted into or out of the data register while the device is busy READY BUSY OUTPUT When the Serial Flash device is selected with CS held low then the DO pin reflects the Ready Busy state of the device This is true at all times except when reading data out of the device as in the Get-Status command or the DataShift-Out command When the device is unselected the DO output is in a high impedance state TL D 12475 – 7 FIGURE 4 Block Erase Sequence Functional Description ORGANIZATION The NM29A040 080 are 4-Mbit and 8-Mbit devices respectively organized as 128 256 blocks of 128 pages A block is the smallest unit that can be erased and is 4 kbytes in size Within a block are 16 rows of 8 pages each row 256 bytes long Each page is 32 bytes long Read and write operations always operate on a page at a time TL D 12475 – 8 FIGURE 5 Device Organization Reading or writing data to the Serial Flash involves clocking data into or out of the data register The data register is a 32-byte wide shift register equivalent in size to one page When shifting in a full page writing to the array and then 5 http www national com Instruction Set The NM29A040 080 have 12 instructions which are described in Table II The command byte (Byte 1) has the following format enabled or disabled mode Bit 0 distinguishes between a 4-Mbit device and an 8-Mbit device The remaining bits are reserved for future use and may appear as any value (‘‘1’’ or ‘‘0’’) TL D 12475 – 12 TL D 12475–10 FIGURE 9 Get-Status Sequence SET-ADDRESS The Set-Address command defines which page and block of the memory is affected by an operation The Set-Address command is followed by two bytes the first indicating the block number and the second indicating the page number The block number chooses one of the 127 254 blocks while the page number chooses one of the 128 pages within the given block The Set-Address command is usually followed by a Read Write or Data-Shift-In command Between the page address byte and the next command there is a delay of tSADD The address that is selected remains the active address until a new Set-Address or Increment command is given INCREMENT The Increment command automatically increments the selected page address When the Increment command is given after the last page in a block has been read the address will roll over to the first page in the following block When the last page in the last addressable block is read out followed by an Increment command the new address is indeterminate FIGURE 7 Command Byte The MSB is always a ‘‘1’’ and is considered the start bit all leading ‘‘0’s’’ are ignored The first ‘‘1’’ detected on the rising edge of SK indicates the initiation of a command The next 4 bits are the instruction opcode The final 3 bits are reserved and must always be ‘‘0’’ Data input of a command other than those listed in Table II is prohibited Data may be corrupted if unspecified commands are used TABLE II Instruction Set Command Get-Status Set-Address Increment Read Write Erase Data-Shift-In Data-Shift-Out Read Last Block Write Enable Write Disable Write Last Block Byte 1 80H 88H 90H 98H A0H A8H B0H B8H D0H E0H E8H F0H 55H 55H Block Address Bits to Shift-In Bits to Shift-Out 55H Block Address Page Address Byte 2 Byte 3 GET-STATUS The Get-Status command allows the user to determine the status of the NM29A040 080 It may be issued whether the device is busy or not The output is a status byte which indicates the internal state of the Serial Flash The output byte is defined as TL D 12475 – 13 FIGURE 10 Increment Sequence READ The Read command transfers data from the selected page of the memory array into the data register To read the data out through DO the Read command is followed by the two byte Data-Shift-Out command There is a delay of tR between the Read command and the Data-Shift-Out command as the data is transferred from the array to the on-chip buffer During tR the status byte will indicate that the part is busy WRITE The Write command programs data from the 32-byte shift register into a page in the memory array for the currently selected address A security code 55H follows the Write command to ensure against accidental Writes Get-Status may be used to ensure that the operation was successful The Write command will be ignored if Write-Enable has not been set TL D 12475–11 FIGURE 8 Get-Status Byte Bit 7 of the status byte tells whether the device is busy performing an operation (write erase etc ) or is ready for a new command Bit 6 tells if a previous write or erase cycle completed successfully Bit 5 tells if the device is in a write http www national com 6 Instruction Set (Continued) ERASE The Erase command erases a single block The Erase command is followed by a single byte telling which block to erase In this manner no Set-Address sequence is required to erase a block Following the block address byte is a single byte security code 55H that is used to prevent inadvertent erasure Get-Status may be used to check if the operation was completed successfully At the completion of the Erase command the selected address is undetermined A Set-Address command is required before any subsequent Read or Write DATA-SHIFT-IN The Data-Shift-In command is used to send data into the on-chip buffer The number of bits sent into the buffer is determined by an 8-bit argument following the command The argument is always 1 less than the actual number of bits to shift in For example to shift in all 32 bytes (256 bits) the argument would be FFH (255) To shift in just 4 bytes (32 bits) the argument would be 1FH (31) Following the argument the data is shifted in through DI Data-Shift-In may come before or after the Set-Address sequence when performing a page write operation DATA-SHIFT-OUT The Data-Shift-Out command is used to shift data out of the on-chip buffer through DO The number of bits sent out is determined by an 8-bit argument following the command The argument is always 1 less than the actual number of bits to shift out For example to shift out all 32 bytes (256 bits) the argument would be FFH (255) To shift out 2 bytes (16 bits) the argument would be 0FH (15) Following the argument the data is shifted out through DO Data shifted out during this command is also internally shifted back into the data register Thus after shifting all 256 bits the contents of the data register remain unchanged WRITE ENABLE The Write Enable command is used as a security check against inadvertent writes or erases to the device When this command is issued any subsequent Write or Erase commands proceed in the normal fashion If the Write Enable command is not given or the device is in the Write Disable mode then a write to any page or erase to any block will not be allowed Use the Get-Status command to determine whether the device currently is in the Write Enabled or Disabled mode The NM29A040 080 will always power up in the Write Disable mode This command may be issued while the device is busy Any change in the Write Enable status will affect the next write or erase operation that is issued WRITE DISABLE The Write Disable command is used to prevent inadvertant writes or erases Once this command is executed all subsequent Write or Erase commands will not be accepted This command may be issued while the device is busy Any change in the Write Enable status will affect the next write or erase operation that is issued READ LAST BLOCK The Read Last Block command is used to read the contents of Block 127 (4-Mbit) or Block 254 (8-Mbit) The Read Last Block operation proceeds like a normal read operation except that the block number is ignored in the Set-Address sequence The block address is automatically set to Block 127 or 254 The Set-Address command is still necessary to set the page to be read In the case of the 8M the page address can range from 0 – 255 for purposes of reading or writing the last block WRITE LAST BLOCK The Write Last Block command writes a page of data to the currently selected page of Block 127 or 254 The Write Last Block command operates like a normal write command except the block number is ignored in the Set-Address sequence The block address is automatically set to Block 127 or 254 The Set-Address command is still necessary to set the page to be written In the case of the 8M the page address can range from 0 – 255 for purposes of reading or writing the last block The Write Last Block command is followed by a security code (55H) Once the information has been written into the memory array it may not be erased 7 http www national com Notifications (1) Interruption by CS Going High When the NM29A040 080 begins reading a page from the array (tR) writing a page to the array (tPROG) or erasing a block (tBERASE) the operation will complete regardless of the state of CS The CS pin may go high during these operations If CS is held low during these operations the DO pin will reflect the state of the operation with a low state (busy) while the operation is being executed When the operation is completed DO will pull high to reflect the ready state (2) Command Reset The NM29A040 080 command register is reset whenever CS changes from low to high As long as the device is powered the data register will continue to hold its data The state of CS does not affect on-going operations as described in Notification (1) (3) Power-Up On power-up the NM29A040 080 is set in the write disable mode This prevents any spurious writes to the device To enable writes or erases the Write Enable (E0H) command must be given At power-up the 32-byte shift register will contain unknown data (4) Multiple Programs to a Page It is possible to program a page more than one time between block erases However each bit (cell) may only be programmed once (Once data has been changed fro a ‘‘1’’ to a ‘‘0’’ a block erase operation is required to change the data back to a ‘‘1’’ ) After a block is erased all bytes will read as ‘‘FFH’’ When less than 32 bytes need to be programmed into a page the remaining bytes may be masked by writing ‘‘FFH’’ to those locations In this way the cells are not changed from their erased states Later these bytes can be programmed with the desired data It is suggested that the number of writes to a page between block erases be held to as few as possible Byte 16–23 FFH Byte 24–31 FFH Byte 0–7 1st Program Data Byte 8–15 FFH Byte 0–7 2nd Program FFH Byte 8–15 Data Byte 16–23 FFH Byte 24–31 FFH FIGURE 11 Multiple Page Program (5) Identification of Unusable Blocks The NM29A040 080 may contain unusable blocks These unusable blocks are due to bit errors in the block An unusable block will not affect adjacent blocks The location of these blocks may be found pre-programmed in Block 127 (4 Mb) or 254 (8 Mb) Each page in Block 127 or 254 corresponds to a block in the array at a similar address For example Page 3 in Block 127 corresponds to Block 3 If Block 3 is a usable block then all bytes in Page 3 of Block 127 will read out ‘‘FFH’’ If Block 3 is an unusable block then some of the bytes in Page 3 of Block 127 will read out data other than ‘‘FFH’’ For customers using the NM29A040 080 with the NSAM266 speech processor the CompactSPEECH embedded software automatically locates the unusable blocks and works around these locations when performing Read Write and Erase operations http www national com 8 Absolute Maximum Ratings If Military Aerospace specified devices are required please contact the National Semiconductor Sales Office Distributors for availability and specifications b 0 6V to 7 0V Power Supply (VCC) b 0 6V to 7 0V Input Voltage (VIN) b 0 6V to VCC g 0 5V ( s 7V) Input Output Voltage (VI O) Power Dissipation (PD) 300 mW Soldering Temperature (Tsolder 10 sec ) 260 C b 55 C to a 150 C Storage Temperature (Tstg) b 40 C to a 85 C Operating Temperature (Topr) Recommended Operating Conditions Power Supply (VCC) Min 4 50 Typ 50 Max 5 50 Units V DC Operating Characteristics (TA e 0 C to a 70 C Symbol ILI ILO ICC01 ICC02 ICC03 ICCS1 ICCS2 VOH VOL VIH VIL Parameter Input Leakage Current Output Leakage Current Operating Current Data Input Output Programming Current Erasing Current Standby Current Standby Current High Level Output Voltage Low Level Output Voltage High Level Input Voltage Low Level Input Voltage CS e VIH VCC e 5V g 10%) Min Typ Max g 10 g 10 Conditions VIN e 0V b VCC VOUT e 0 4V b VCC tCYCLE e 500 ns Units mA mA mA mA mA mA mA V 5 15 10 120 5 24 20 60 40 500 50 CS e VCC b 0 2V IOH e b400 mA IOL e 2 1 mA 20 b0 3 04 VCC a 0 5 08 V V V b 2V (Pulse width s 20 ns) AC Electrical Characteristics (TA e 0 C to a 70 C Symbol fSK tSKH tSKL tSKS tCS tCSS tDIS tCSH tDIH tDF tDH tPD tSADD tPROG tBERASE tR NM29A040 NM29A080 VCC e 5V g 10%) Min 0 125 125 Typ Max 4 Units MHz ns ns ns ns ns ns ns ns 100 0 100 200 400 400 6 9 5000 100 25 ns ns ns ms ms ms ms Parameter SK Clock Frequency SK High Time SK Low Time SK Setup Time Minimum CS High Time CS Setup Time DI Setup Time CS Hold Time DI Hold Time CS to DO in TRI-STATE DO Hold Time Output Delay Set Address Time Page Program Time Block Erase Time Page Read Transfer Time Conditions Relative to CS Falling Edge 50 250 Relative to SK Rising Edge Relative to SK Rising Edge Relative to SK Falling Edge Relative to SK Rising Edge AC Test Relative to SK Falling Edge Relative to SK Falling Edge AC Test 100 50 50 20 9 http www national com Number of Valid Blocks The NM29A040 080 may contain unusable blocks These unusable blocks should not be used to store data Notification (5) describes how to identify unusable blocks Symbol NVB4 NVB8 Parameter 4-Mbit Number of Valid Blocks(1) 8-Mbit Number of Valid Blocks(1) Min 117 234 Typ TBD TBD Max 127(2) 254(2) Units Block Block Note 1 A valid block is a block having all 4096 bytes usable An unusable block is a block in which a minimum of one bit is unusable Note 2 Not including Block 127 (4-Mbit) or 254 (8-Mbit) Timing Diagrams Synchronous Data Timing TL D 12475 – 16 Get Status Timing TL D 12475 – 17 Note To avoid putting the device in an unknown state DI should be held low when not clocking in data commands Set Address Timing TL D 12475 – 18 Note CS can be pulled high during tSADD tR tPROG and tBERASE However DO will only reflect the status (ready busy) while CS is low http www national com 10 Timing Diagrams (Continued) Read and Data-Shift-Out Timing TL D 12475 – 19 Write Timing TL D 12475 – 20 Erase Timing TL D 12475 – 21 11 http www national com Physical Dimensions inches (millimeters) Molded Small Outline Package Order Number NM29A040M NM29A080M NS Package Number MA28A http www national com 12 Physical Dimensions inches (millimeters) (Continued) Molded Plastic Leaded Chip Carrier Order Number NM29A040V NS Package Number V28A 13 http www national com NM29A040 080 4-Mbit 8-Mbit CMOS Serial FLASH E2PROM Physical Dimensions inches (millimeters) (Continued) Molded Plastic Leaded Chip Carrier Order Number NM29A080V NS Package Number VA32A LIFE SUPPORT POLICY NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL SEMICONDUCTOR CORPORATION As used herein 1 Life support devices or systems are devices or systems which (a) are intended for surgical implant into the body or (b) support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in a significant injury to the user National Semiconductor Corporation 1111 West Bardin Road Arlington TX 76017 Tel 1(800) 272-9959 Fax 1(800) 737-7018 2 A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system or to affect its safety or effectiveness http www national com National Semiconductor Europe Fax a49 (0) 180-530 85 86 Email europe support nsc com Deutsch Tel a49 (0) 180-530 85 85 English Tel a49 (0) 180-532 78 32 Fran ais Tel a49 (0) 180-532 93 58 Italiano Tel a49 (0) 180-534 16 80 National Semiconductor Hong Kong Ltd 13th Floor Straight Block Ocean Centre 5 Canton Rd Tsimshatsui Kowloon Hong Kong Tel (852) 2737-1600 Fax (852) 2736-9960 National Semiconductor Japan Ltd Tel 81-043-299-2308 Fax 81-043-299-2408 National does not assume any responsibility for use of any circuitry described no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications