NSAM265SFA

NSAM265SR NSAM265SF CompactSPEECH Digital Speech Processors PRELIMINARY November 1995 NSAM265SR NSAM265SF CompactSPEECH TM Digital Speech Processors General Description The NSAM265SR and the NSAM265SF are members of National Semiconductor’s CompactSPEECH Digital Speech processors family These processors provide Digital Answering Machine (DAM) functionality to embedded systems Both processors are based on the NSAM265 Unless specified otherwise all references to the CompactSPEECH processor in this document apply to both the NSAM265SR and the NSAM265SF The CompactSPEECH processor integrates the functions of a traditional Digital Signal Processing (DSP) chip and a 16bit CompactRISCTM embedded Risc processor core The device contains system support functions such as DRAM Controller Interrupt Control Unit Codec Interface MICROWlRETM interface WATCHDOGTM timer and a Clock Generator The CompactSPEECH processor operates as a slave peripheral that is controlled by an external microcontroller via a serial MICROWIRE interface In a typical DAM environment the microcontroller controls the analog circuits buttons and display and activates the CompactSPEECH by sending it commands The CompactSPEECH processor executes the commands and returns status information to the microcontroller The CompactSPEECH firmware implements voice compression and decompression tone detection and generation message storage management on-chip speech synthesis for time and day stamp and support for user-defined voice prompts in various languages The NSAM265SR CompactSPEECH supports DRAM ARAM for message storage while the NSAM265SF supports FLASH AFLASH In all other respects the processors are identical The CompactSPEECH implements echo cancellation techniques to support improved DTMF tone detection during message playback The CompactSPEECH supports speech synthesis the technology used to create voice prompts from predefined words and phrases stored in a vocabulary The CompactSPEECH can synthesize messages in various languages in addition to the on-chip English vocabulary via the International Vocabulary Support (IVS) mechanism Synthesized messages can be stored on an external ROM One ROM can contain several vocabularies in various languages The NSAM265SF can also store vocabularies on FLASH memory DAM manufacturers can thus create machines that ‘‘speak’’ in different languages simply by using other vocabularies For more details about IVS refer to the IVS User’s Manual Features Y Y Y Y Y Y Y Y Y Y Y Y Y Y Y Y Y Y Y Y Designed around National’s 16-bit CompactRISC processor 16-bit architecture and implementation 20 48 MHz operation On-chip DSP Module (DSPM) for high speed DSP operations On-chip Codec clock generation and interface Power-down mode MICROWIRE interface to an external microcontroller Storage and management of messages Programmable message tag for message categorization e g Mailboxes InComing Messages (ICM) OutGoing Messages (OGM) Skip forward or backward during message playback Variable speed playback Built-in vocabulary for speech synthesis and support for external vocabularies using expansion ROM Multi-lingual speech synthesis using International Vocabulary Support (IVS) DTMF and single tone generation and detection DTMF tone detection during OutGoing Message playback Telephone line functions including busy and dial tone detection Real-time clock Direct access to message memory Supports long-frame and short-frame codecs Available in PLCC 68-pin and PQFP 100-pin packages NSAM265SR only Y On-chip ARAM DRAM Controller for 4-Mbit (1M x 4) and 16-Mbit (4M x 4) devices Y 15 minutes recording on a 4-Mbit ARAM Y Supports various ARAM configurations No glue logic required Y Storage of up to 1600 messages Y Production diagnostics support NSAM265SF only Y Supports 4-Mbit and 8-Mbit byte wide FLASH AFLASH devices Y Up to 15 minutes recording on a 4-Mbit FLASH Y Supports various AFLASH configurations No glue logic required for a single AFLASH configuration Y The number of messages that can be stored is limited only by memory size Y Supports prerecorded IVS and OGM on FLASH TRI-STATE is a registered trademark of National Semiconductor Corporation CompactSPEECHTM CompactRISCTM MICROWIRETM and WATCHDOGTM are trademarks of National Semiconductor Corporation C1995 National Semiconductor Corporation TL EE12378 RRD-B30M115 Printed in U S A Block Diagrams NSAM265SF Basic Configuration TL EE 12378 – 1 NSAM265SR Basic Configuration TL EE 12378 – 2 2 Table of Contents 1 0 THEORY OF OPERATION 1 1 Overview 1 2 The State Machine 1 3 Command Execution 1 4 Tunable Parameters 1 5 Messages 1 5 1 Message Tag 1 6 ARAM Support 1 7 FLASH Support 1 7 1 Block Erasure 1 7 2 FLASH Endurance 1 7 3 Memory Operating Modes in NSAM265SF 1 8 Tone and No-Energy Detection 1 9 Speech Synthesis 1 9 1 Explanation of Terms 1 9 2 Internal Vocabulary 1 9 3 External (International) Vocabularies 1 10 Initialization 2 0 FUNCTIONAL DESCRIPTION 2 1 Introduction 2 2 Resetting 2 3 The Serial Microwire Interface 2 3 1 Signal Description 2 3 2 Signal Use in the Interface Protocol 2 3 3 Interface Protocol Error Handling 3 0 COMMAND SET 3 1 Commands Summary 3 2 Commands Description APPENDIX A DEVICE SPECIFICATIONS A 1 Pin Assignment A 2 Absolute Maximum Ratings A 3 Electrical Characteristics A 4 Switching Characteristics APPENDIX B SCHEMATIC DIAGRAMS 2 4 CODEC Interface 2 5 DRAM ARAM Access (NSAM265SR) 2 5 1 Refreshing a DRAM ARAM 2 6 DRAM ARAM Specifications (NSAM265SR) 2 7 DRAM ARAM Configurations (NSAM265SR) 2 8 FLASH AFLASH Access (NSAM265SF) 2 9 FLASH AFLASH Specifications 2 10 FLASH AFLASH Configurations 2 11 IVS Access 2 12 Clocking 2 13 Power-Down Mode 2 14 Power and Grounding 3 1 0 Theory of Operation 1 1 OVERVIEW The CompactSPEECH is a digital speech processor which provides Digital Answering Machine (DAM) functionality to embedded systems such as fax machines or stand-alone answering machines The CompactSPEECH processor is based on a powerful 16-bit RISC CPU with Digital Signal Processing (DSP) module However since the CompactSPEECH firmware is masked in the internal ROM it requires neither 16-bit nor DSP programming The CompactSPEECH processor is designed to operate as a slave peripheral that is controlled by an external microcontroller via a simple MICROWIRE based serial link The microcontroller is responsible for system-level control (e g buttons display ring detection) while the CompactSPEECH is responsible for speech and tone operations such as recording playback tone detection and speech synthesis The NSAM265SR CompactSPEECH supports DRAM and Audio grade DRAM (ARAM) as a storage device ARAMs are cheaper than DRAMs which reduces the total system cost The NSAM265SR CompactSPEECH has an on-chip DRAM controller which reduces the chip count for complete DAM functionality to three (the CompactSPEECH ARAM and a codec) The CompactSPEECH supports various ARAM configurations and automatically recognizes the actual configuration The NSAM265SF CompactSPEECH supports FLASH and Audio grade FLASH (AFLASH) as a storage device A DAM design which incorporates FLASH technology does not require a battery backup for the message storage device thus reducing the system cost and complexity When necessary the CompactSPEECH can be switched to power-down mode which considerably reduces the power consumption of the whole system The CompactSPEECH includes an on-chip English vocabulary for time-and-day stamp announcements and voice prompts In addition to the on-chip vocabulary the CompactSPEECH supports external vocabularies (resident on external ROM or AFLASH) which can be used to implement voice prompts in various languages Several vocabularies can be supported simultaneously This chapter describes the features of the CompactSPEECH processor and how they work together 1 2 THE STATE MACHINE The CompactSPEECH functions as a state machine It changes state either in response to a command sent by the microcontroller after execution of the command is completed or as a result of an internal event (e g memory full or power failure) The CompactSPEECH may be in one of the following states RESET The CompactSPEECH is initialized to this state after a full hardware reset by the RESET signal (see Section 2 2) CompactSPEECH detectors (VOX call progress tones and DTMF tones) are not active In all other states the detectors are active (See the SDET and RDET commands for further details ) IDLE This is the state from which most commands are executed As soon as a command and all its parameters are received the CompactSPEECH starts executing the command PLAY In this state a message is decompressed and played RECORD In this state a message is compressed and recorded into the message memory SYNTHESIS An individual word or a sentence is synthesized from the onchip or an external vocabulary TONE GENERATE The CompactSPEECH generates single or DTMF tones MEMORY READ The CompactSPEECH reads a 32-byte block from the message memory and sends it to the external microcontroller MEMORY WRITE The CompactSPEECH accepts a 32-byte block from the external microcontroller and writes it to the message memory MEMORY FREE The CompactSPEECH takes memory space that was freed by the DM and DMS commands and makes it available for new messages This process occurs only with NSAM265SF where FLASH memory is used for message storage After receiving an asynchronous command (see Section 1 3) such as P (Playback) R (Record) SW (Say Words) or GT (Generate Tone) the CompactSPEECH switches to the appropriate state and executes the command until it is completed or an S (Stop) or PA (Pause) command is received from the microcontroller When an asynchronous command execution is completed the CompactSPEECH switches to the IDLE state Table 1-1 shows the CompactSPEECH commands the source states in which these commands are valid and the result states which the CompactSPEECH enters as a result of the command 4 1 0 Theory of Operation (Continued) TABLE 1-1 CompactSPEECH States and Transitions Command Description Source State Result State Configuration and Status Commands AMAP CFG CVOC GEW FR GCFG GI Check and Map ARAM Configure CompactSPEECH Check Vocabulary Get Error Word Free Memory Get Configuration Get Information IDLE RESET IDLE All states IDLE RESET IDLE PLAY RECORD SYNTHESIS TONE GENERATE IDLE MEMORY FREE IDLE All states IDLE RESET IDLE IDLE IDLE IDLE MEMORY FREE IDLE All states but RESET IDLE MEMORY FREE IDLE MEMORY FREE IDLE IDLE MEMORY FREE IDLE IDLE IDLE PLAY RECORD SYNTHESIS TONE GENERATE IDLE IDLE PLAY RECORD SYNTHESIS TONE GENERATE IDLE IDLE PLAY IDLE PLAY IDLE PLAY IDLE IDLE PLAY SYNTHESIS IDLE MEMORY FREE IDLE IDLE PLAY SYNTHESIS IDLE TONE GENERATE IDLE RESET IDLE No change MEMORY FREE No change No change GMS GSW GTD INIT INJ MR PDM RDET S SDET SETD SV TUNE Speech Commands AMSG GT P PA R RES SAS SB SE SF SO SPS SS SW VC Get Memory Status Get Status Word Get Time and Day Initialize System Inject IVS Data Memory Reset Go to Power-Down Mode Reset Detectors Stop Set Detectors Mask Set Time and Day Set Vocabulary Type Tune Append to Current Message Generate Tone Playback Pause Record Resume Say Argumented Sentence Skip Backward Skip to End of Message Skip Forward Say One Word Set Playback Speed Say Sentence Say Words Volume Control IDLE No change IDLE IDLE IDLE IDLE IDLE No change IDLE No change No change IDLE No change RECORD TONE GENERATE PLAY No change RECORD No change SYNTHESIS No change No change No change SYNTHESIS No change SYNTHESIS SYNTHESIS No change 5 1 0 Theory of Operation (Continued) TABLE 1-1 CompactSPEECH States and Transitions (Continued) Command Message Management Commands CMT DM DMS GL GMT GNM GTM RRAM SMT WRAM Cut Message Tail Delete Message Delete Messages Get Length Get Message Tag Get Number of Messages Get Tagged Message Read RAM Set Message Tag Write RAM IDLE IDLE IDLE IDLE IDLE IDLE IDLE IDLE MEMORY READ IDLE IDLE MEMORY WRITE IDLE IDLE IDLE IDLE IDLE IDLE IDLE MEMORY IDLE MEMORY WRITE READ Description Source State Result State Command is valid in IDLE state but has no effect 1 3 COMMAND EXECUTION A CompactSPEECH command is represented by an 8-bit opcode Some commands have parameters and some have a return value Commands are either synchronous or asynchronous Synchronous Commands A synchronous command completes execution before the microcontroller can send a new command (e g GMS GEW) A command sequence starts when the microcontroller sends an 8-bit opcode to the CompactSPEECH followed by the command’s parameters (if any) The CompactSPEECH executes the command and if required transmits a return value to the microcontroller Upon completion the CompactSPEECH notifies the microcontroller that it is ready to accept a new command Asynchronous Commands An asynchronous command starts execution in the background and notifies the microcontroller which can send more commands while the current command is still running (e g R P) The Status Word The CompactSPEECH processor has a 16-bit status word to indicate events that occur during normal operation The CompactSPEECH activates the MWRQST signal to indicate a change in the status word This signal remains active until the CompactSPEECH receives a GSW command The Error Word The 16-bit error word indicates errors that occurred during execution of the last command If an error is detected the command is not processed the EV ERROR bit in the status word is set to 1 and the MWRQST signal is activated Error Handling When the microcontroller detects that the MWRQST signal is active it should issue the GSW (Get Status Word) command which deactivates the MWRQST signal Then it should test the EV ERROR bit In the status word and if it is set send the GEW (Get Error Word) command to read the error word for details of the error For a detailed description of each of the CompactSPEECH commands see Section 3 0 1 4 TUNABLE PARAMETERS The CompactSPEECH processor can be adjusted to your system’s requirements For this purpose the CompactSPEECH supports a set of tunable parameters which are set to their default values after reset and can be later modified with the TUNE command By tuning these parameters you can control various aspects of the CompactSPEECH’s operation such as silence compression tone detection noenergy detection etc Table 3-1 describes all the tunable parameters in detail Section 3 describes the TUNE command 1 5 MESSAGES The CompactSPEECH message manager supports a wide range of applications which require different levels of DAM functionality The message-organization scheme and the message tag support advanced memory-organization features such as multiple OutGoing Messages (OGMs) mailboxes and the ability to distinguish between InComing Messages (ICMs) and OGMs The NSAM265SF can store up to 256 messages per 4 Mbits of AFLASH storage The NSAM265SR can store up to 100 messages per 4 Mbits of ARAM storage A message is the basic unit on which most of the CompactSPEECH commands operate A CompactSPEECH message stored in ARAM or AFLASH can be regarded as a computer file stored on a mass-storage device A message is created with either the R or the WRAM (Write RAM) command When a message is created it is assigned a time-and-day stamp and a message tag which can be read by the microcontroller The R command takes voice samples from the codec compresses them and stores them in the message memory 6 1 0 Theory of Operation (Continued) When a message is created with the WRAM command the data to be recorded is provided by the microcontroller and not the codec The data is transferred directly to the message memory It is not compressed by the CompactSPEECH voice compression algorithm The WRAM command together with the RRAM (Read RAM) command which enables the microcontroller to read data from the CompactSPEECH can be used to store data other than compressed voice in the message memory For example in the NSAM265SF the AFLASH memory can be used to store a telephone directory A message can be played back (P command) and deleted (DM command) Redundant data (e g trailing tones or silence) can be removed from the message tail with the CMT (Cut Message Tail) command The PA and RES (Resume) commands respectively temporarily suspend the P and R commands and then allow them to resume execution from where they were suspended Current Message Most message handling commands e g P DM RRAM operate on the current message The GTM (Get Tagged Message) command selects the current message Deleting the current message does not cause a different message to become current The current message is undefined If however you issue the GTM command to skip to the next message the first message that is newer than the just deleted message will be selected as the current message 1 5 1 Message Tag Each message has a 2-byte message tag which you can use to categorize messages and implement such features as OutGoing Messages mailboxes and different handling of old and new messages In the NSAM265SR bits 0–6 are application definable bits 7 – 15 are reserved In the NSAM265SF bits 0–14 are application definable bit 15 is the MESSAGE SAFE bit The MESSAGE SAFE bit should be used to record safe (non-volatile) messages (e g OGMs) when the NSAM265SF is configured to memory-intensive mode (see Section 1 7 3) For memory-management reasons the NSAM265SF must keep at least one FLASH block without safe messages If there is no such block available during recording of a safe message or when the microcontroller tries to create a new message with the R or WRAM command recording stops and the EV MEMFULL bit in the status word is set The GMT (Get Message Tag) and SMT commands may be used to handle message tags Note For the NSAM265SF message tag bits can only be cleared Message tag bits are set only when a message is first created This limitation is inherent in FLASH memories which only allow bits to be changed from 1 to 0 (changing bits from 0 to 1 requires a special erasure procedure see Section 1 7 1) However the main reason for updating an existing tag is to mark a message as old and this can be done by using one of the bits as a new old indicator setting it to 1 when a message is first created and clearing it when necessary After an ARAM mapping process (see the AMAP command) which marks bad ARAM rows which can not be used for recording the NSAM265SR can use the rest of the ARAM space for message recording A single 1-Mbit c 4 ARAM device holds an average of 15 minutes of recording time (actual time may vary because of environmental conditions e g speech attributes background noise etc ) 1 7 FLASH SUPPORT The NSAM265SF CompactSPEECH supports 4-Mbit and 8-Mbit byte wide AFLASH devices for storing messages A FLASH device is organized in 64 Kbytes blocks An AFLASH device is a FLASH device with one or more bad blocks which can not be used for message recording The NSAM265SF can use such devices for message recording without any affect on voice quality if they conform to the specifications described in Section 2 9 There are two major problems imposed by current FLASH technology block erasure time and FLASH endurance Both these limitations are handled by the CompactSPEECH firmware 1 7 1 Block Erasure The basic software interface to a DRAM device includes read and write operations Writing a value to a memory location simply replaces its contents In a FLASH environment an erase operation is also required You must ensure that a memory location which was previously written is erased prior to writing The basic unit that can be read or written is a byte the basic unit that can be erased is an entire 64 Kbytes block Block erasure takes time The following erasure times are quoted from AMD and INTEL datasheets for devices supported by the NSAM265SF INTEL 28F008SA 1 6 sec (typical) 10 sec (max) AMD AM29F040 1 5 sec (min) 30 sec (max) A FLASH memory can not be written while erasure is in progress During erasure access to the FLASH is not allowed The CompactSPEECH however accepts commands which do not require FLASH access (e g Get Status) during erasure 1 7 2 Flash Endurance FLASH memories may be erased a limited number of times Currently FLASH manufacturers do not guarantee more than 100 000 erase cycles To reduce the effect of this limitation the memory manager utilizes FLASH blocks evenly i e each block is erased more or less the same number of times to ensure that all blocks have the same lifetime Consider the following extensive usage of all FLASH blocks 1 Record 15 minutes of messages (until the memory is full) 2 Playback 15 minutes (all the recorded messages) 3 Delete all messages Assuming a 4-Mbit FLASH device is used in this manner 24 times a day the expected life time of the FLASH is Flash Lifetime e 100 000 (24 365) e 11 4 years Thus the FLASH device will last for over ten years even when used for six hours of recording per day Note that if two 4-Mbit devices are used then under the same conditions each device will last for more than 20 years 7 1 6 ARAM SUPPORT The NSAM265SR supports up to two 4-Mbit (1M c 4) ARAM devices or one 16-Mbit (4M x 4) device for storing messages An ARAM device is actually a bad DRAM device i e it may contain bad bits The NSAM265SR can use such devices for message recording without noticeable effect on voice quality if they conform to the specifications described in Section 2 6 1 0 Theory of Operation (Continued) 1 7 3 Memory Operating Modes in NSAM265SF The NSAM265SF supports two operating modes of the FLASH memory manager (selected by the CFG command) Normal Mode In this mode the NSAM265SF always keeps one free block for memory management The EV MEMFULL event is set when all but one good AFLASH blocks are full and recording on the last available free block is not allowed Maximum recording time in this mode On one 8-Mbit FLASH (no bad blocks) device 28 minutes and 8 seconds On one 4-Mbit FLASH (no bad blocks) device 13 minutes and 8 seconds Memory Intensive Mode All good blocks are available for message recording As long as there is one free block available for memory management this mode is the same as normal mode The CompactSPEECH sets the EV MEMLOW event when approximately 20 seconds recording time remain on the one-before-last FLASH block The EV MEMFULL event is set only when all the blocks are full However if the last good block is used for recording the NSAM265SF no longer has a free block for memory management and therefore may fail to free memory space i e execute the FR command The microcontroller must delete all messages with the MESSAGE SAFE bit cleared to guarantee that at least one block is erased and can be used for memory management When there is no block available for memory management and you attempt to record a message with the MESSAGE SAFE bit set the CompactSPEECH sets the EV MEMFULL event and does not allow you to record Thus it is possible to avoid a situation where a safe message must be deleted to free a FLASH block Maximum recording time in this mode On one 8 Mbits FLASH (no bad blocks) device 30 minutes On one 4 Mbits FLASH (no bad blocks) device 15 minutes 1 8 TONE AND NO-ENERGY DETECTION The CompactSPEECH detects DTMF busy and dial tones and no energy (VOX) This enables remote control operations and call progress Detection is active throughout the operation of the CompactSPEECH Detection can be configured using the SDET (Set Detectors Mask) command which controls the reporting of occurrence of tones and the RDET (Reset Detectors) command which resets the detectors DTMF DTMF detection may be reported at starting point ending point or both The report is made through the status word (for further details see GSW command in Section 3 2) The DTMF detector specifications as measured on the line input using the NSV-AM265-DAA board are summarized below (see Table 1-2) Echo Cancellation Echo cancellation is a technique used to improve the performance of DTMF tone detection during speech synthesis tone generation and OGM playback For echo cancellation to work properly AGC must not be active in parallel Thus to take advantage of echo cancellation the microcontroller must control the AGC i e disable the AGC during PLAY SYNTHESIS and TONE GENERATE states and enable it again afterwards If AGC can not be disabled do not use echo cancellation The microcontroller should use the CFG command to activate deactivate echo cancellation (For further details see Section 3 2 ) Echo cancellation applies only to DTMF tones Busy and dial tones detection is not affected by this technique TABLE 1-2 DTMF Detector Specifications Play Detection Sensitivity (Note A) Accepted DTMF Length Frequency Tolerance S N Ratio Minimum Spacing (Note B) Normal Twist Reverse Twist (Note C) b 33 with Echo Canceller b 23 w o Echo Canceller l 50 ms Record Idle b 40 dBm l 40 ms g 1 5% g 1 5% 12 dB l 45 ms 12 dB l 45 ms 8 dB 4 dB or 8 dB 8 dB 4 dB or 8 dB Note A Performance depends on DAA design Note B If the interval between two consecutive DTMF tones is less than or equal to 20 ms the two are detected as one long DTMF tone If the interval between two consecutive DTMF tones is between 20 ms and 45 ms separate detection is unpredictable Note C Determined according to the DTMF eter value REV TWIST tunable param- 8 1 0 Theory of Operation (Continued) Other Detectors Detection of busy and dial tones and no-energy is controlled by tunable parameters You should tune the thresholds of these parameters to fit your hardware For more information see the TUNE command in Section 3 2 Dial and busy tone detectors work with a band pass filter that limits the frequency range in which tones can be detected to 0 Hz–1100 Hz Its frequency response is illustrated in Figure 1-1 and the busy tone cadences in Figure 1-2 Tone Generation The CompactSPEECH can generate DTMF tones and single-frequency tones from 300 Hz to 2000 Hz in increments of 100 Hz CompactSPEECH tone generation conforms with EIA-470-RS standard Note however that you may have to change the value of some tunable parameters in order to meet the standard specifications since the energy level of generated tones depends on the analogue circuits being used  Sentences announced from a predefined table of sentences  On-the-fly sentence announcement 1 9 1 Explanation of Terms The following terms are used throughout this document Vocabulary A complete set of words and sentences Words are arranged in a word table Sentences are arranged in a sentence table Word Table A set of words arranged in a table as part of a vocabulary Sentence Table  Tune the DTMF TWIST LEVEL parameter to control the twist level of the generated DTMF tones A set of sentences arranged in a table as part of a vocabulary The structure of a sentence table is described in detail in the International Vocabulary Support User’s Manual The Internal Vocabulary includes a built-in table with two entries An entry in a word table which represents a spoken word or phrase A word is played with the SW (Say Words) or SO (Say One word) commands A series of words synthesized from a vocabulary A sentence is defined as an entry in the sentence table and is synthesized with the SS (Say Sentence) or SAS (Say Argumented Sentence) command or is synthesized ‘‘on-the-fly’’ with the SW command The vocabulary in English which resides on the CompactSPEECH’s internal ROM An optional vocabulary which resides on external ROM or (NSAM265SF only) FLASH A method that enables the same CompactSPEECH command to synthesize sentences with the same meaning but in different languages from separate external vocabularies Word  Use the VC command and tune the TONE GENERATION LEVEL parameter to control the energy level at which these tones are generated  Use the GT command to specify the DTMF tones and the frequency at which single tones are generated 1 9 SPEECH SYNTHESIS Speech synthesis enables you to announce prerecorded voice prompts or form a sentence by combining individual words A built-in is supplied with the CompactSPEECH for announcing the number of messages and the time and day The main speech synthesis features are Sentence Internal Vocabulary  On-chip English vocabulary for announcing the number of messages and the time and day  Additional vocabularies (NSAM265SF only) the microcontroller code on ROM or FLASH External Vocabulary  International Vocabulary Support (IVS) without changing  Up to 220 words in each vocabulary Each word can be announced separately International Vocabulary Support (IVS) TL EE 12378 – 3 FIGURE 1-1 Busy and Dial Tone Band Pass Filter Frequency Response TL EE 12378 – 47 E1 b E3 k 90 ms S1 b S3 k 90 ms 100 k Ei k 1700 ms 50 k Si k 1300 ms FIGURE 1-2 Busy Tone Detector Cadence Specification 9 1 0 Theory of Operation (Continued) 1 9 2 Internal Vocabulary Table 1-3 summarizes the words in the standard internal English speech synthesis vocabulary Sentences Currently two built-in sentences 0 and 1 are supported Time and Day and You Have The CompactSPEECH provides specific commands to synthesize these sentences when an Internal Vocabulary is used When using External Vocabularies sentences can be defined in a sentence table and accessed directly via the SAS command Use the SS command to play a sentence without an argument Use the SAS command to play a sentence with an argument A sentence can have only one argument Table 1-4 summarizes the sentences in the standard internal English speech synthesis vocabulary TABLE 1-3 Internal Vocabulary Index 0 1 2 3 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 oh one two three nineteen twenty thirty forty fifty twenty thirty forty fifty AM PM Monday Tuesday Wednesday Thursday Friday Saturday Sunday no messages message you have end of messages Word Word Table Sentences Currently two built-in sentences 0 and 1 are supported Time and Day and You Have The CompactSPEECH provides specific commands to synthesize these sentences when an Internal Vocabulary is used When using External Vocabularies sentences can be defined in a sentence table and accessed directly via the SAS command Use the SS command to play a sentence without an argument Use the SAS command to play a sentence with an argument A sentence can have only one argument TABLE 1-4 Internal Vocabulary Index Sentence 0 Argument Sentence Table Comment Time and time Day Comment (as in eight oh five pm-8 05 PM) Numbers four through 18 (at end of word as in 8 20 PM) (at end of word) (at end of word) (at end of word) (in middle of word as in 8 23 PM) (in middle of word) (in middle of word) (in middle of word) day option Announces one of two sentences according to the argument If time day option is 0 synthesize the actual current time and day If time day option is not 0 synthesize the current message time and day stamp Announces the number of messages according to the argument The 1-byte num of msgs may be any value from 0 through 59 If num of msgs is 0 the word no is synthesized instead of a number 1 You Have num of msgs (as in you have no messages) (as in you have one message) 10 1 0 Theory of Operation (Continued) 1 9 3 External (International) Vocabularies Tools for creation of external vocabularies are available With these tools voice format files can be compressed and both numbers and sentences can be composed to comply with the grammar of a specific language The CompactSPEECH supports external vocabularies which you can easily tailor for country-specific applications Every language has its own sentence structure and its own mechanism for composing numbers Therefore the information on the sentence structure and number composition is a part of the external vocabulary A method IVS has been developed which uses this information to compose a complete sentence The information stored in the external vocabulary together with this retrieval method can be used to compose sentences or phrases in various languages or to implement a voice menu or command voice prompts The additional vocabulary can reside on either external ROM or (NSAM265SF only) AFLASH IVS enables you to have the same program on the controller to support operation with several languages You have only to switch to another table containing another language and the machine ‘‘speaks’’ the new language The Rule Before using a specific table set the currently used vocabulary with the command SV (Set Vocabulary Type) Until the next invocation of this command the selected vocabulary is used when invoking any synthesis command IVS Structure It is possible to have several vocabularies on one external ROM or FLASH device and the controller can switch between them 1 10 INITIALIZATION Use the following procedures to initialize the CompactSPEECH processor Normal Initialization 1 Reset the CompactSPEECH by activating the RESET signal (See Section 2 2 ) 2 Issue a GSW command and check that the EV RESET bit in the status word is set 3 Issue a GCFG (Get Configuration) command to figure out what CompactSPEECH knows about your environment 4 Issue a CFG (Configure CompactSPEECH) command to change the configuration according to your environment 5 Issue an INIT (Initialize System) command to initialize the CompactSPEECH 6 Issue a GMS (Get Memory Status) command to determine the size of the memory (Optional NSAM265SF only) Issue an FR command to free potentially available memory 7 Issue a AMAP (Check and Map ARAM) 3 command to test and map the ARAM (Required only on NSAM265SR) 8 Use the TUNE command to set all hardware parameters Production Test (for the NSAM265SR only) To save time on the production line of the final product a set of diagnostics is available Production testing is the primary use of the AMAP command The following procedure is recommended 1 Reset the CompactSPEECH by activating the RESET signal (See Section 2 2 ) 11 2 Issue a GSW command and check that the EV RESET bit in the status word is set 3 Issue a GCFG (Get Configuration) command to figure out what CompactSPEECH knows about your environment 4 Issue a CFG (Configure CompactSPEECH) command to change the configuration according to your environment 5 Issue an INIT command 6 Issue a AMAP 0 command to verify that the correct number of ARAMs are connected 7 Issue a AMAP 1 command as part of the tests to verify connectivity to all ARAMs 8 Record and playback a short message (up to 5 seconds) as part of the tests to verify connectivity and functionality of the codec interface 9 If you use an external vocabulary choose the appropriate table and playback a synthesized sentence (e g ‘‘You have no messages ’’) as part of the tests to check connectivity to the ROM(s) holding the External vocabulary 2 0 Functional Description 2 1 INTRODUCTION This section provides details of the functional characteristics of the CompactSPEECH processor It is divided into the following sections Resetting The serial interface Codec interface Memory (DRAM FLASH) accesses Memory (DRAM FLASH) configurations IVS access Clocking Power-down mode Power and grounding The processor signals mentioned in this section are described in Appendix A 2 2 RESETTING The RESET pin is used to reset the CompactSPEECH processor On application of power RESET must be held low for at least 30 ms after VCC is stable This is to ensure that all onchip voltages are completely stable before operation Whenever RESET is applied it must also remain active for not less than 30 ms During these 30 ms and for 100 ms after the TST signal must be high This can be done by putting a pull-up resistor on the WRO TST pin The value of MWRDY is undefined during the 30 ms reset period and for 100 ms after The microcontroller should either wait before polling the signal for the first time or the signal should be pulled high during this period Upon reset the ENV0 signal is sampled to determine the operation environment During reset the EMCS ENV0 pin is used for the ENV0 input signals An internal pull-up resistor sets ENV0 to 1 After reset the same pin is used for EMCS System Load on ENV0 The load connected to the ENV0 pin should not allow the voltage on ENV0 to drop below VENVh If the load caused by the ENV0 pin exceeds 10 mA use an external pull-up resistor to keep the pin at 1 2 0 Functional Description (Continued) MWCS MICROWIRE Chip Select The MWCS signal is asserted (0) to indicate that the CompactSPEECH is accessed Asserting the MWCS causes the CompactSPEECH to start driving the MWDOUT with bit 7 of the transmitted value Negating the signal resets the transfer-bit counter of the protocol so it can be used as a synchronization between the CompactSPEECH and the microcontroller To prevent false detection of access to the CompactSPEECH due to spikes on the MWCLK signal use this chip select signal and toggle the MWCLK input signal only when the CompactSPEECH is accessed Output Signals MWDOUT MICROWIRE Data Out Used for output only for transferring data from the CompactSPEECH to the microcontroller When the CompactSPEECH receives data it is echoed back to the microcontroller on this signal unless the received data is 0xAA In this case the CompactSPEECH echoes a command’s return value MWRDY MICROWIRE Ready When active (0) this signal indicates that the CompactSPEECH is ready to transfer (receive or transmit) another byte of data This signal is deactivated (1) by the CompactSPEECH upon each byte transfer completion It remains deactivated while the CompactSPEECH is busy reading the byte writing the next byte or executing the received command (after the last parameter has been received) MWRDY is asserted by reset For proper operation after a hardware reset this signal should be pulled up MWRQST MICROWIRE Request When active (0) this signal indicates that new status information is available MWRQST is deactivated (1) after the CompactSPEECH receives a GSW (Get Status Word) command from the microcontroller After reset this signal is active (0) to indicate that a reset occurred MWRQST unlike all the signals of the communication protocol is an asynchronous line that is controlled by the CompactSPEECH firmware 2 3 2 Signal Use in the Interface Protocol After reset the MWRQST signal is activated (0) and the MWRDY signal is activated (0) The MWRQST signal is activated to indicate that a reset occurred The EV RESET bit in the status register is used to indicate a reset condition The GSW command should be issued after reset to verify that the EV RESET event occurred and to deactivate the MWRQST signal While the MWCS signal is active (0) the CompactSPEECH reads data from MWDIN on every rising edge of MWCLK CompactSPEECH also writes every bit back to MWDOUT This bit is either the same bit which was read from MWDIN (in this case it is written back as a synchronization echo mechanism after some propagation delay) or it is a bit of a value the CompactSPEECH transmits to the microcontroller (in this case it is written on every falling edge of the clock) When a command has more than one parameter return-value the parameters return-values are transmitted in the order of appearance If a parameter return-value is more than one byte long the bytes are transmitted from the most significant to the least significant one 12 TL EE 12378–4 FIGURE 2-1 Recommended Power-On Reset Circuit 2 3 THE SERIAL MICROWIRE INTERFACE The CompactSPEECH supports the MICROWIRE synchronous serial communication protocol The communication protocol used by the CompactSPEECH is an extension of this protocol scheme The microcontroller is the protocol master and provides the clock for the protocol The CompactSPEECH supports clock rates of up to 400 kHz This transfer rate refers to the bit transfer the actual throughput is slower due to byte processing by the CompactSPEECH and the microcontroller Communication is handled in bursts of eight bits (one byte) In each burst the CompactSPEECH is able to receive and transmit eight bits of data After eight bits have been transferred an internal interrupt is issued for the CompactSPEECH to process the byte or to prepare another byte for sending In parallel the CompactSPEECH sets (1) the MWRDY signal to signal the microcontroller that it is busy with the byte processing Another byte can be transferred only when the MWRDY signal is asserted (0) by the CompactSPEECH When the CompactSPEECH transmits data it expects to receive the value 0xAA as an echo after each transmitted byte The CompactSPEECH reports any status change by asserting the MWRQST signal (0) If a parameter of a CompactSPEECH command is bigger than one byte the Most Significant Byte (MSB) should be transmitted first by the microcontroller If a return value is bigger than one byte the MSB is transmitted first by CompactSPEECH Note Although the CompactSPEECH does not enforce a lower limit on the bit transfer rate the time between bytes within the same command must not exceed 2 ms 2 3 1 Signal Description The following signals are used for the interface protocol Input and output are relative to the CompactSPEECH Input Signals MWDIN MICROWIRE Data In Used for input only for transferring data from the host to the CompactSPEECH MWCLK This signal serves as the synchronization clock during communication One bit of data is transferred on every clock cycle The input data is available on MWDIN and is latched on the clock rising edge The transmitted data is output on MWDOUT on the clock falling edge The signal should remain low when switching MWCS 2 0 Functional Description (Continued) The MWRDY signal is used as follows 1 An active (0) MWRDY signal signals the microcontroller that the last eight bits of data transferred to from the CompactSPEECH were accepted and processed (see below) 2 The MWRDY signal is deactivated (set to 1 by the CompactSPEECH) after 8 bits of data were transferred to from the CompactSPEECH The bit is set following the falling edge of the eighth MWCLK clock-cycle 3 The MWRDY signal is activated (by the CompactSPEECH) when the CompactSPEECH is ready to receive the first parameter byte (if there are any parameters) and so on till the last byte of parameters is transferred An active MWRDY signal after the last byte of parameters indicates that the command was parsed and (if possible) executed If that command has a return value the microcontroller must read the value before issuing a new command 4 When a return value is transmitted the MWRDY signal is deactivated after every byte and activated again when the CompactSPEECH is ready to send another byte or to receive a new command The MWRDY signal is activated (set to 0) after reset and protocol timeout (See Section 2 3 3 ) The MWRQST signal is used as follows 1 The MWRQST signal is activated (0) when the status word is changed 2 The MWRQST signal remains active (0) until the CompactSPEECH receives a GSW command nal is asserted a time-out event occurs and the CompactSPEECH responds as follows 1 Sets the error bit in the status word to 1 2 Sets the EV TIMEOUT bit in the error word to 1 3 Activates the MWRQST signal (sets it to 0) 4 Activates the MWRDY signal (sets it to 0) 5 Waits for a new command (After a time-out occurs the microcontroller must wait at least four milliseconds before issuing the next command ) Echo Mechanism The CompactSPEECH echoes back to the microcontroller all the bits received by the CompactSPEECH Upon detection of an error in the echo the microcontroller should stop the protocol clock which eventually will cause a time-out error (i e ERR TIMEOUT bit is set in the error word) Note When a command has a return value the CompactSPEECH transmits bytes of the return value instead of the echo value When the CompactSPEECH is transmitting a byte it expects to receive the value 0xAA as an echo Upon detection of an error the CompactSPEECH activates the MWRQST signal and sets the ERR COMM bit in the error word 2 4 CODEC INTERFACE The CompactSPEECH provides an on-chip interface to a serial codec The interface supports codec operation in long or short-frame formats The format is selected with the CFG command The codec interface uses four signals CDIN CDOUT CCLK and CFS0 Data is transferred to the codec through the CDOUT pin Data is read from the codec through the CDIN pin Data transfer between the CompactSPEECH and the serial codec starts by the CompactSPEECH asserting (high) the CFS0 frame sync signal After one clock cycle the CompactSPEECH de-asserts CFS0 data from the CompactSPEECH is sent to the codec through CDOUT and simultaneously data from the codec is sent to the CompactSPEECH through CDIN Figure 2-2 illustrates the sequence of activities during a MICROWIRE data transfer 2 3 3 Interface Protocol Error Handling Interface Protocol Time-Outs When the time between two consecutive byte transmissions or bytes reception within the same command or return value exceeds two milliseconds after the MWRDY sig- TL EE 12378 – 5 FIGURE 2-2 Sequence of Activities During a MICROWIRE Byte Transfer 13 2 0 Functional Description (Continued) TL EE 12378 – 6 FIGURE 2-3 Codec Protocol - Short Frame TL EE 12378 – 7 FIGURE 2-4 Codec Protocol - Long Frame 2 5 DRAM ARAM Access (NSAM265SR) Reading from DRAM A read bus cycle starts at T1 when the row address is driven on the address bus and the data bus is in TRI-STATE DWE is inactive (1) throughout the bus cycle One idle cycle (TI) is guaranteed before a DRAM bus cycle In the next clock cycle (T2W1) RAS is asserted (0) T2W2 and T2W3 follow the T2W1 bus cycle At T2W3 the column address is driven onto the address bus A(0 10) (RA11 is in TRI-STATE) Six T2W cycles and one T2 cycle follow At the first T2W cycle the CAS signal is asserted (0) At the end of T2 the NSAM265SR samples the data The bus cycle is terminated with a T3 cycle when RAS and CAS signals become inactive (1) To ensure enough DRAM pre-charge time the DRAM read bus cycle is separated by at least three clock cycles from any other DRAM bus cycle (read write or refresh) Other bus cycles can start after at least one TI (Idle) cycle For more details refer to the timing diagram Figure A-10 and AC DC specifications in ELECTRICAL CHARACTERISTICS Writing to DRAM A write bus cycle starts at T1 when the row address is driven on the address bus and the data bus is in TRISTATE One idle cycle (TI) is guaranteed before a DRAM bus cycle In the next clock cycle (T2W1) RAS is asserted (0) and the data is available on the data bus (except for D2) T2W2 and T2W3 follow the T2W1 cycle At T2W2 DWE is asserted (0) to indicate the write operation In the next cycle (T2W3) the column address is driven onto the address bus A(0 10) and RA11 Then six T2W cycles and one T2 cycle follow At the first T2W cycle CAS is asserted (0) The bus cycle is terminated by a T3 cycle when DWE RAS and CAS signals become inactive (1) To provide enough DRAM pre-charge time the DRAM write bus cycle is separated by at least three clock cycles from any other DRAM bus cycle (read write or refresh) Other bus cycles can start after at least one TI cycle For more details refer to the timing diagram Figure A-11 and AC DC specifications in ELECTRICAL CHARACTERISTICS 2 5 1 Refreshing a DRAM ARAM The NSAM265SR generates DRAM refresh bus cycles in both normal operation and power-down modes In both cases a clock generated by the clock generator sets the refresh rate to of the oscillator frequency 14 2 0 Functional Description (Continued) In Normal Operation Mode In normal operation mode a refresh bus cycle starts at T2W1RF by asserting CAS (0) DWE stays inactive (1) throughout the transaction Nine cycles follow the T2W1RF cycle T2W2RF T2W3RF six T2WRF cycles and a T2 cycle The RAS signal is asserted (0) at the first T2WRF cycle The transaction is terminated at T3RF when RAS and CAS signals become inactive (1) To ensure enough DRAM precharge time the DRAM refresh bus cycle is separated by at least three clock cycles from any other DRAM bus cycle (read write or refresh) Other bus cycles can be performed in parallel with a refresh transaction and or the three cycles following the refresh transaction In Power-Down Mode In power-down mode a DRAM refresh cycle starts when the CAS signal is held asserted (0) for 32 oscillator cycles RAS is asserted (0) 16 oscillator cycles after the CAS signal is asserted (0) After another 16 oscillator cycles both the RAS and CAS signals become inactive (1) In power-down mode DWE stays inactive (1) In power-down mode A(0 10) and RA11 stay inactive (0) and D(0 1) and D(3 7) are in TRI-STATE 2 6 DRAM ARAM SPECIFICATIONS (NSAM265SR) The NSAM265SR supports three types of ARAM devices  Clean rows are ARAM rows without any defects  An ARAM row containing more bad nibbles than allowed is counted as a bad row  A nibble which contains one or more bad bits is counted as one bad nibble  The maximum number of bad rows permitted is 200 When the AMAP 3 command is issued and there are more than 200 bad rows the ERR ARAM bit in the error word is set 2 7 DRAM ARAM CONFIGURATIONS (NSAM265SR) During power-up the NSAM265SR automatically determines the memory configuration used for message storage The AMAP command returns the number of ARAMs The following memory configurations are recognized Number of Number of ARAMs Messages 1 (4 Mbits) 2 (4 Mbits) 1 (16 Mbits) 2 (16 Mbits) 1 (16 Mbits) 2 (16 Mbits) 100 400 400 1600 200 800 Data Pins D0 – D3 D0 – D7 D0 – D3 D0 – D7 D0 – D3 D0 – D7 Number of Address Lines ROWS x COLS 10 x 10 10 x 10 12 x 10 12 x 10 11 x 11 11 x 11 Address Lines A0 – A9 A0 – A9 A0 – A10 RA11 A0 – A10 RA11 A0 – A10 A0 – A10  1M x 4 bits organized in 1024 rows x 1024 columns  4M x 4 bits organized in 4096 rows x 1024 columns  4M x 4 bits organized in 2048 rows x 2048 columns ARAM Device Type 4 Mbits 16 Mbits 16 Mbits Number of Rows 1024 4096 2048 Clean Rows 4 (0 to 3) 16 (0 to 15) 4 (0 to 3) Bad Nibbles in One Row k 0 5% k 0 5% k 0 5% TL EE 12378 – 8 FIGURE 2-5 Connections for Two 1-Mbit c 4 ARAMs 15 2 0 Functional Description (Continued) 2 8 FLASH AFLASH ACCESS (NSAM265SF) The NSAM265SF CompactSPEECH supports off-chip memory devices through Expansion Memory Up to 64 Kbytes (64K c 8) of Expansion Memory are supported directly Nevertheless the CompactSPEECH uses bits of the onchip I O port (PB) to further extend the 64 Kbytes address space and with additional glue logic it can access up to 2 Mbytes address space The Expansion Memory mechanism is used to connect the NSAM265SF CompactSPEECH to AFLASH and IVS ROM devices ROM is connected to the CompactSPEECH using the data bus D(0 7) the address bus A(0 15) the extended address signals EA(16 21) (EA21 serves as the ROM Output Enable signal ROM OE) and Expansion Memory Chip Select EMCS controls If AFLASH is connected (NSAM265SF only) the FLASH OE signal is also used The number of extended address pins to use may vary depending on the size and configuration of the ROM and AFLASH devices Reading from Expansion Memory An Expansion Memory read bus cycle starts at T1 when the data bus is in TRI-STATE and the address is driven on the address bus EMCS is asserted (0) on a T2W1 cycle This cycle is followed by three T2W cycles and one T2 cycle Data is sampled by the NSAM265SF at the end of the T2 cycle The transaction is terminated at T3 when EMCS becomes inactive (1) The address remains valid until T3 is complete A T3H cycle is added after the T3 cycle The address remains valid until the end of T3H WR0 is inactive (1) during the read bus cycle 2 9 FLASH AFLASH SPECIFICATIONS The NSAM265SF supports either the AMD Am29F040 Sector Erase Audio Flash 4-Mbit Memory or the Intel 28F008SA 8-Mbit AFLASH memory as message storage devices These devices are organized in 64-Kbytes blocks and support up to 100 000 block-erase cycles For the exact features of these devices please refer to the devices’ specifications AFLASH devices contain bad blocks The NSAM265SF supports devices with more good blocks than bad blocks i e at least five good blocks on the AMD device and at least nine good blocks on the Intel device 2 10 FLASH AFLASH CONFIGURATIONS The NSAM265SF supports up to two 28F008SA devices or up to four 29F040 devices The actual configuration is selected by the CFG command Figures 2-6 2-7 2-8 and 2-9 illustrate the minimum and maximum configurations for each device in an environment that contains an IVS ROM TL EE 12378 – 9 FIGURE 2-6 One Intel Flash Device No External Glue Logic 16 2 0 Functional Description (Continued) TL EE 12378 – 10 FIGURE 2-7 Two Intel Flash Devices External Logic One Decoder TL EE 12378 – 11 FIGURE 2-8 One AMD Flash Device No External Glue Logic 17 2 0 Functional Description (Continued) TL EE 12378 – 12 FIGURE 2-9 Four AMD Flash Devices External Logic 2 11 IVS ACCESS IVS vocabularies reside on either ROM or FLASH (NSAM265SF only) The IVS tool is used to compile a vocabulary definition into a binary file that should be burnt into the memory device If more than one vocabulary is used the binary files are concatenated to form a single ‘‘ready-toburn’’ binary file For more details about the IVS tool and how to program IVS vocabularies on ROM and FLASH See the IVS User’s Manual 2 12 CLOCKING The CompactSPEECH provides an internal oscillator that interacts with an external clock source through the X1 PLI and X2 CLKIN pins Either an external single-phase clock signal or a crystal may be used as the clock source One Decoder Single-Phase Clock Signal If an external single-phase clock source is used it should be connected to the CLKIN signal as shown in Figure 2-10 and should conform with the voltage level requirements for CLKIN stated in ELECTRICAL CHARACTERISTICS TL EE 12378 – 13 FIGURE 2-10 External Clock Source 18 2 0 Functional Description (Continued) Crystal Oscillator A crystal resonator is connected to the on-chip oscillator circuit via the X1 and X2 signals as shown in Figure 2-11 this case when returning to normal mode the microcontroller should perform the initialization sequence as described in Section 1 10 and use the SETD command to set the time and day To keep power consumption low in power-down mode the RESET MWCS MWCLK and MWDIN signals should be held above VCC b 0 5V or below VSS a 0 5V The PDM (Go To Power-down Mode) command switches the CompactSPEECH to power-down mode It may only be issued when the CompactSPEECH is in the IDLE state If it is necessary to switch to power-down mode from any other state the controller must first issue an S command to switch the CompactSPEECH to the IDLE state and then issue the PDM command Sending any command while in powerdown mode will return the CompactSPEECH to normal operation mode 2 14 POWER AND GROUNDING The CompactSPEECH processor requires a single 5V power supply applied on the VCC pins The grounding connections are made on the GND pins For optimal noise immunity the power and ground pins should be connected to VCC and ground planes respectively on the printed circuit board If VCC and ground planes are not used single conductors should be run directly from each VCC pin to a power point and from each GND pin to a ground point Avoid daisy-chained connections Use decoupling capacitors to keep the noise level to a minimum Standard 0 1 mF ceramic capacitors can be used for this purpose They should attach to VCC GND pins as close as possible to the CompactSPEECH During prototype using wire-wrap or similar methods the capacitors should be soldered directly to the power pins of the CompactSPEECH socket or as close as possible with very short leads Design Notes When constructing a board using high frequency clocks with multiple line switching special care should be taken to avoid resonances on signal lines A separate power and ground layer is recommended Switching times of under 5 ns are possible on some lines Resonant frequencies should be maintained well above the 200 MHz frequency range on signal paths by keeping traces short and inductance low Loading capacitance at the end of a transmission line contributes to the resonant frequency and should be minimized if possible Capacitors should be located as close as possible across each power and ground pair near the CompactSPEECH TL EE 12378 – 14 FIGURE 2-11 Connections for an External Crystal Oscillator Stray capacitance and inductance should be kept as low as possible in the oscillator circuit The crystal and the external components should be as close to the X1 PLI and X2 CLKIN pins as possible to keep the trace lengths in the printed circuit as to an absolute minimum Crystals with maximum load capacitance of 20 pF may be used although the oscillation frequency may differ from the crystal’s specified value Table 2-1 defines the components in the crystal oscillator circuit 2 13 POWER-DOWN MODE Power-down mode is useful during a power failure when the power source for the CompactSPEECH is a backup battery or in battery powered devices while the CompactSPEECH is idle Note that there is no need to battery backup the AFLASH devices in the NSAM265SF In power-down mode the clock frequency of the CompactSPEECH is reduced and some of the processor modules are deactivated As a result the CompactSPEECH consumes much less power than in normal-power mode The CompactSPEECH does not perform its usual functions in power-down mode but it still preserves stored messages and maintains the time of day The NSAM265SF stores messages and all memory management information in FLASH memory Thus there is no need to maintain the power to the processor to preserve stored messages If the microcontroller’s real-time clock (and not the NSAM265SF’s real-time clock) is used to maintain the time and day neither the FLASH nor the NSAM265SF require battery backup during power failure In TABLE 2-1 Components of a Crystal Oscillator Circuit Component Crystal Oscillator Parameters Resonance Frequency Third Overtone Type Maximum Serial Resistance Maximum Shunt Capacitance Maximum Load Capacitance Values 40 96 MHz Parallel AT-Cut 50X 7 pF 12 pF 10 MX 1000 pF 3 9 mH Tolerance NA Resistor R1 Capacitor C1 L (Inductance) 5% 20% 10% 19 3 0 Command Set This section describes the CompactSPEECH commands their parameters and return values The NSAM265SR and NSAM265SF support the same command set Some commands however behave differently for ARAM and AFLASH 3 1 COMMANDS SUMMARY The following table shows the CompactSPEECH commands These commands are described in greater detail in the next section Command Type Mnemonic S A AMAP AMSG CFG CMT CVOC DM DMS FR GCFG GEW GI GL GMS GMT GNM GSW GT GTD GTM INIT INJ MR P PA PDM R RDET RES RRAM S SAS SB S A S S S S S A S S S S S S S S A S S S S S A S S A S S S S A S Opcode Hex 06 27 01 26 2B 0A 0B 08 02 1B 25 19 12 04 11 14 0D 0E 09 13 29 2A 03 IC 1A 0C 2C 1D 18 00 1E 23 Notes The command type is shown in the column headed Type S A where A indicates an Asynchronous command and S indicates a Synchronous Command The current message is not always defined (e g after execution of the DMS command) The CompactSPEECH behavior while executing commands that operate on the current message when it is not defined is unpredictable Use the GTM command to set the current message as required Command Parameters Description Action Number None Config Value 2 2 Length Bytes 1 Return Value Description Test Result None None None Test Result None 1 Length Bytes 1 Description Check and Map ARAM Append to Current Message Configure CompactSPEECH Cut Message Tail Check Vocabulary Delete Message Delete Messages Free Memory Get Configuration Value Get Error Word Get Information Item Get Length Get Memory Status Type Get Message Tag Get Number of Messages Get Status Word Generate Tone Tone Get Time and Day Get Tagged Message Initialize System Inject IVS Data Memory Reset Playback Pause Go to Power-Down Mode Record Message Reset Detectors Resume Read RAM Stop Say Argumented Sentence Skip Backward Length of Time None None Tag None None None Index None Type None Tag Ref Tag None Tone or DTMF Time Day Option Tag Ref Tag None N Byte1 None None None None Message Tag Detectors Reset Mask None None None Sentence n arg1 Length of Time Byten Mask Ref Tag Mask 2a2 None None Version Config Error Word Value 2 2 2 2 2 2 1 2 1 Value Message Length 1 Recording Time Left Message Tag 2a2 Number of Messages Status Word 1 1 None Time Day 2 1 Mask Dir 2 a 2 a 1 Message Found None 4an None None None None None 2 1 None None None Data None 1a1 2 None None 32 20 3 0 Command Set (Continued) Command Mnemonic SDET SE SETD SF SMT SO SPS SS SV SW TUNE VC WRAM Type SA S S S S S A S A S A S S S Description Opcode Hex 10 24 0F 22 05 07 16 1F 20 21 15 28 17 Command Parameters Description Detectors Mask None Time Day Length of Time Message Tag Word Number Speed Value Sentence n Mode Id N Word1 Index Value Increment Decrement Message Tag Data Wordn 2 2 2 1 1 1 1a1 1an 1a2 1 2 a 32 Length Bytes 1 Return Value Description None None None None None None None None None None None None None Length Bytes Set Detectors Mask Skip to End of Message Set Time and Day Skip Forward Set Message Tag Say One Word Set Playback Speed Say Sentence Set Vocabulary Type Say Words Tune Index Volume Control Write RAM 3 2 COMMANDS DESCRIPTION The commands are listed in alphabetical order Each command indicates by a the chips for which it is intended Commands which are not intended for a particular chip are valid for that chip but have no effect Chip-specific features of a command which is intended for both chips are indicated by the chip name in the margin The execution time for all commands when specified includes the time required for the microcontroller to retrieve the return value where appropriate The execution time does not include the protocol timing overhead i e the execution times are measured from the moment that the command is detected as valid until the command is fully executed AMAP Check and Map ARAM action number NSAM265SR NSAM265SF V This command runs diagnostics on the ARAMs and returns a 1-byte result The following actions are performed according to the 1-byte action number parameter Action 0 Checks the ARAM configuration The return value is encoded as follows Bits 0 – 1 Number of ARAM devices (1 or 2) Bits 2 – 3 Number of ARAM columns in multiples of 1k units (1 or 2) Bits 4 – 6 Number of ARAM rows in multiples of 1k units (1 2 or 4) Action 1 This action is intended to be carried out on the production line It performs the following tests Address line test Scan one row from start to end and from end to start Write to line X and check that line Y is not written (RAS CAS not connected test) Walking 1 and walking 0 on the data lines 21 Action 1 then performs Action 3 (see below) on the first 60 rows only This allows you to record a short memo of up to 5-seconds duration to check the system and codec Execution time is less than 1 second This action returns 0 if the ARAMs pass the connectivity test or the ID of the first ARAM to fail The return value is 1-byte long IDs are allocated according to the following scheme TL EE 12378 – 15 Action 2 Performs a one-pass test clears the entire ARAM to 0 and marks all the bad rows in the internal row table If more than 0 5% nibbles in a row are bad the row is mapped as bad If more than 200 of the rows are bad the EV ERROR bit in the status word and the ERR ARAM bit in the error word are set to 1 This operation does not detect ARAM cross-talk problems Action 2 of the AMAP command should be invoked immediately after the INIT command and is valid only in the IDLE state If this command is not issued the ARAM is considered as a DRAM (no errors) The test takes up to 20 seconds Action 3 Performs a two-pass test to map and return the number of bad rows If more than 0 5% nibbles in a row are bad the row is mapped as bad If more than 5% of the rows are bad the EV ERROR bit in the status word and the ERR ARAM bit in the error word are set to 1 This diagnostic also detects ARAM cross-talk problems 3 0 Command Set (Continued) The test takes up to 40 seconds If action number is not in the 0 3 range ERR set in the error word NSAM265SF The return value is 0 AMSG NSAM265SR V Bit 3 PARAM is Memory utilization mode (NSAM265SF only) 0 Normal (default) 1 Intensive For more details about memory operating modes see Section 1 7 3 The NSAM265SR ignores this bit Bits 4 – 5 FLASH device protocol (NSAM265SF only) 00 AMD Am29040 and compatibles (default) 01 INTEL 28F008SA and compatibles 10 Reserved 11 Reserved Bits 6 – 7 FLASH device size and organization (NSAM265SF only) 00 4-Mbit byte wide (default) 01 8-Mbit byte wide 10 Reserved 11 Reserved Bits 8 – 10 Number of installed FLASH devices (NSAM265SF only) Valid range 1 4 AMD 1 2 INTEL Default is 1 Bits 11 – 15 Reserved Must be set to 0 The following pseudo C code demonstrates the initialization sequence to be executed by a microcontroller that supports the NSAM265SF with two Intel 8-Mbit devices IVS and a long format codec in a system with AGC that can’t be disabled Memory utilization mode is normal Append to Current Message NSAM265SF Skips to the end of the current message and starts recording The CompactSPEECH state changes to RECORD The AMSG command continues execution until stopped by the S command Recording can be paused with the PA command and can be resumed later with the RES command If the memory becomes full recording stops and EV MEMFULL is set in the status word EV MEMFULL is also set in the NSAM265SF if there is only one AFLASH block available for recording and the MESSAGE SAFE bit in the current message tag is set Configure CompactSPEECH config value NSAM265SR NSAM265SF This command is used to configure the CompactSPEECH in various hardware environments The command should be used to change the default CompactSPEECH configuration The config value parameter is encoded as follows CFG Bit 0 Codec configuration 0 short frame format (default) 1 long frame format (Guaranteed by design but not tested ) Bit 1 Reserved Bit 2 Echo cancellation control 0 Echo cancellation off (default) 1 Echo cancellation is on during playback Echo cancellation improves the performance of DTMF detection during playback Echo cancellation can be turned on only with a system that can disable AGC during playback A system with AGC that can not be controlled (i e enabled disabled) by the microcontroller must not turn on this bit TL EE 12378 – 16 22 3 0 Command Set (Continued) CMT Cut Message Tail time length FR NSAM265SR V Free Memory NSAM265SR NSAM265SF Cut time length units each of 10 ms duration off the end of the current message The maximum value of time length is 6550 Cut-time accuracy is 0 14 seconds Note If time length is longer than or equal to the total duration of the message the EV NORMAL END event is set in the status word and the message becomes empty (i e message length is 0) but is not deleted Use the DM (Delete Message) or DMS (Delete Messages) command to delete the message CVOC Check Vocabulary NSAM265SF NSAM265SR Checks the correctness of the current selected vocabulary The purpose of this command is to check the correctness of IVS vocabularies which were pre-programmed to a FLASH device If the vocabulary data is OK or if the current vocabulary is the internal vocabulary the return value is 1 Otherwise the return value is 0 DM NSAM265SR Delete Message NSAM265SF Deletes the current message Deleting a message clears its message tag Deleting the current message does not cause a different message to become current The current message is undefined If for example you issue the GTM command to skip to the next message the first message that is newer than the just deleted message will be selected as the current message NSAM265SR The memory space released by the deleted message is immediately available for recording new messages NSAM265SF The memory space released by the deleted message is potentially available (see the GMS command) but in practice is available only after the FR command has been executed Delete Messages tag ref tag mask NSAM265SR NSAM265SF Deletes all messages whose message tags match the tag ref parameter Only bits set in tag mask are compared i e a match is considered successful if message tag and tag mask e tag ref and tag mask DMS where and is a bitwise AND operation After the command completes execution the current message is undefined Use the GTM to select a different message to be the current message NSAM265SR The memory space released by the deleted message is immediately available for recording new messages NSAM265SF The memory space released by the deleted message is potentially available (see the GMS command) but in practice is available only after the FR command has been executed NSAM265SF Frees memory space for recording When a message is deleted with a DM or DMS command the memory space which was occupied by the deleted message is marked DELETED but is not available for recording new messages The process performed by the FR command makes this memory space available for recording When execution of the FR command starts the state of the CompactSPEECH changes to MEMORY FREE When the process is completed the CompactSPEECH sets the EV NORMAL END event and activates the MWRQST signal The process can be stopped with the S command The typical execution time of an S command following an FR command is 1 second Since the process involves erasure of AFLASH blocks the maximum execution time of an S command following an FR command is according to the AFLASH device specification (i e 3 seconds a single block erasure time) Possible schemes for using FR in a DAM environment  When the CompactSPEECH is idle for a few seconds after a sequence of one or more DM or DMS commands A typical DAM session involves listening to ICMs and deleting some of them The microcontroller assumes that such a session has been completed if the CompactSPEECH is idle for a preset time and should then issue the FR command  During initialization (after the INIT command has been executed) We recommend sending a GMS command to see if there is sufficient potential additional recording time to justify sending the FR command We recommend suspending FR execution (with the S command) if a ring is detected to minimize the time taken by the CompactSPEECH to prepare for ICM recording Note After FR execution has been completed the current message is undefined Use the GTM command to select the current message GCFG Get Configuration Value NSAM265SR NSAM265SF This command returns a sequence of two bytes with the following information Bits 0 – 7 Magic number which specifies the CompactSPEECH firmware version Bits 8 – 9 Memory type 00 ARAM 01 AFLASH 10 11 Reserved The command should be used together with the CFG and INIT commands during CompactSPEECH initialization See the CFG command for more details and an example of a typical initialization sequence NSAM265SF Returns the 2-byte error word The Error Word The 16-bit error word indicates errors that occurred during execution of the last command If an error is detected the command is not processed the EV ERROR bit in the status word is set to 1 and the MWRQST signal is activated (set to low) 23 GEW NSAM265SR Get Error Word 3 0 Command Set (Continued) 15 Reserved 8 7 ERR INVALID 6 ERR TIMEOUT 5 ERR COMM 4 ERR ARAM 3 ERR PARAM 2 ERR COMMAND 1 ERR OPCODE 0 Reserved The GEW command reads the error word The error word is cleared during reset and before execution of all commands except GSW and GEW If errors ERR COMMAND or ERR PARAM occur during the execution of a command that has a return value the return value is undefined The microcontroller must still read the return value to ensure proper synchronization The bits of the error word are used as follows ERR OPCODE Illegal opcode The command opcode is not recognized by the CompactSPEECH ERR COMMAND Illegal command sequence The command is not legal in the current state ERR PARAM Illegal parameter Parameter value is out of range or is not appropriate for the command ERR ARAM ARAM test failed This test is performed only during execution of the AMAP command on the NSAM265SR ERR COMM MICROWIRE communication error ERR TIMEOUT Time-out error More than 2 ms elapsed between the arrival of two consecutive bytes (for commands that have parameters) ERR INVALID Command can’t be performed in current context Get Information item NSAM265SR NSAM265SF Returns the 16-bit value specified by item from one of the internal registers of the CompactSPEECH GI NSAM265SF Returns the length of the current message in multiples of 32 bytes This information enables the controller to read the entire message from memory using the RRAM command The returned value is a 16-bit unsigned integer NSAM265SR The returned value includes the entire last ARAM row of the message even if the message occupies only a portion of the last row Since an ARAM row includes 512 1024 or 2048 bytes (depending on the memory configuration) the returned value may be up to 511 1023 or 2047 bytes bigger than the actual message length NSAM265SF The returned value includes the entire last AFLASH segment of the message even if the message occupies only a portion of the last segment Since an AFLASH sector includes 2048 bytes the returned length may be up to 2047 bytes bigger than the actual message length The minimum length of a message is one segment i e an empty message occupies 2 kbytes (the message length is 2048 32 e 64) GMS Get Memory Status type NSAM265SR NSAM265SF Returns the estimated total remaining recording time in seconds as a 16-bit unsigned integer This estimate assumes no silence compression a real recording may be longer according to the amount of silence detected and compressed The return value is dependent on the value of the type parameter as follows 0 The actual remaining recording time is returned 1 The potential additional recording time is returned Deleted messages hold memory space that can not be used for recording until the FR command is executed The total amount of recording time used by such messages is the potential additional recording time (In the NSAM265SR this time is always zero ) 2 The sum of the actual and potential recording times is returned The return value is unpredictable for any other value of type GMT NSAM265SR Get Message Tag NSAM265SF Returns the 16-bit tag associated with the current message NSAM265SF Bits 7 – 15 are meaningful only in the NSAM265SF GL NSAM265SR Get Length item may be one of the following 0 The duration of the detected DTMF tone in 10 ms units The return value is meaningful only if DTMF detection is enabled and the status word shows that a DTMF tone was detected The duration includes the time required to verify that the DTMF tone has ended 1 The duration of the last detected busy tone in 10 ms units This value is only valid if EV BUSY of the status register is set to 1 Otherwise it is undefined 2 The energy level of the samples in the last 10 ms 3 The energy level of the samples in the last 10 ms that are in the frequency range described in Figure 1-1 The return value is meaningful only if one of the tone detectors is enabled (bits 0 1 of the detectors mask see the description of SDET command) The return value is unpredictable for any other value of item 24 3 0 Command Set (Continued) 15 EV DTMF 14 EV RESET 13 EV VOX 12 11 10 EV MEMLOW 9 8 7 EV ERROR 6 5 4 EV DTMF END 3 EV DTMF DIGIT 0 Reserved EV EV DIALTONE BUSY EV EV MEMFULL NORMAL END GNM Get Number of Messages tag ref tag mask NSAM265SR NSAM265SF Returns the number of messages whose message tags match the tag ref parameter Only bits set in tag mask are compared i e a match is considered successful if message tag and tag mask e tag ref and tag mask where and is a bitwise AND operation The tag ref and tag mask parameters are each two bytes the return value is also 2-byte long For example if tag ref e 4216 and tag mask e 3F16 the number of existing old messages whose user-defined tag is 2 is returned See Section 1 5 for a description of message tag encoding If tag mask e 0 the total number of all existing messages is returned regardless of the tag ref value GSW NSAM265SR Get Status Word NSAM265SF Returns the 2-byte status word The Status Word The CompactSPEECH processor has a 16-bit status word to indicate events that occur during normal operation The CompactSPEECH sets the MWRQST signal to active (low) to indicate a change in the status word This signal remains active until the CompactSPEECH receives a GSW command The status word is cleared during reset and by the GSW command The bits in the status word are used as follows EV DTMF DIGIT DTMF digit A value indicating a detected DTMF digit (See GT command ) EV DTMF END 1 e Ended detection of a DTMF tone The detected digit is held in EV DTMF DIGlT EV NORMAL END 1 e Normal completion of operation e g end of message playback end of garbage collection etc EV MEMFULL 1 e Memory is full EV ERROR 1 e Error detected in the last command You can use the GEW command to return the error code EV BUSY 1 e Busy tone detected Use this indicator for call progress and line disconnection EV DIALTONE 1 e Dial tone detected Use this indicator for call progress and line disconnection EV MEMLOW NSAM265SF only 1 e Memory is almost full (i e 20 seconds recording time remain assuming no silence on the one-before-last FLASH block) when working in memory intensive mode EV VOX 1 e a period of silence (no energy) was detected on the telephone line during recording EV RESET When the CompactSPEECH completes its power-up sequence and enters the RESET state this bit is set to 1 and the MWRQST signal is activated (set low) Normally this bit changes to 0 after performing the INIT command If this bit is set during normal opertion of CompactSPEECH it indicates an internal CompactSPEECH error The microcontroller can recover from such an error by reinitializing the system EV DTMF 1 e Started detection of a DTMF tone Generate Tone tone NSAM265SR NSAM265SF Generates the tone specified by the 1-byte tone parameter until an S command is received Specify the tone by setting the bits of tone as follows GT Bit 0 Bits 1 – 4 1 DTMF code Where the DTMF code is encoded as follows Value (Hex) DTMF Digit 0 to 9 0 to 9 A A B C D B E C F D Bits 5 – 7 0 To generate a single-frequency tone encode the bits as follows Bit 0 0 Bits 1 – 5 3 – 20 The value in bits 1 – 5 is multiplied by 100 to generate the required frequency (300 Hz through 2000 Hz) Bits 6 7 0 CompactSPEECH does not check the validity of the tone specification Invalid specifications yields unpredictable results 25 3 0 Command Set (Continued) GTD Get Time and Day time day option NSAM265SR NSAM265SF Returns the time and day as a 2-byte value time day option may be one of the following 0 Get the system time and day 1 Get the current message time stamp Any other time day option returns the time stamp of the current message Time of day is encoded as follows Bits 0 – 2 Day of the week (1 through 7) Bits 3 – 7 Hour of the day (0 through 23) Bits 8 – 13 Minute of the hour (0 through 59) Bits 14 – 15 00 The time was not set before the current message was recorded 11 The time was set i e the SETD (Set Time of Day) command was executed Get Tagged Message tag ref tag mask dir NSAM265SR NSAM265SF Selects the current message according to instructions in dir to be the first nth next or nth previous message which complies with the equation message tag and tag mask e tag ref and tag mask GTM where and is a bitwise AND operation dir is one of the following 0 Selects the first (oldest) message n Selects the nth next message starting from the current message b n Selects the nth previous message starting from the current message Note To select the nth message with a given tag to be the current message you must first select the first message that complies with the above equation and then issue another GTM command with n b 1 as a parameter to skip to the nth message This may take up to 4 seconds a single FLASH block erasure time  Switches to the IDLE state  Activates (sets to low) the MWDRY signal The current message is undefined after INIT execution The tunable parameters are not affected by this comand They are set to their default values only during RESET Inject IVS data n byte1 byte n NSAM265SR NSAM265SF Injects vocabulary data of size n bytes to good consecutive FLASH blocks The purpose of the command is to enable to program FLASH devices on the production line with IVS vocabulary data The command is optimized for speed and therefore all CompactSPEECH detectors are suspended during the command execution The CVOC command can be used to check whether programming was successful If there is not enough memory space for the vocabulary data ERR PARAM is set in the error word and execution stops FLASH blocks that include IVS data cannot be used for recording even if only one byte of the block contains IVS data (e g if the vocabulary size is 64k a 100 bytes TWO blocks of the FLASH will not be available for message recording) INJ MR NSAM265SR Memory Reset NSAM265SF Erases all good AFLASH blocks and initializes CompactSPEECH (i e does exactly what the INIT command does) Bad blocks and blocks which are used for IVS vocabularies are not erased The execution time of the command is dependent on the number of good AFLASH blocks and the block erasure time of the AFLASH device Note The command erases all messages and should be used with care If dir is 0 and a message is found it becomes the current message and 1 (TRUE) is returned If no message is found the current message remains unchanged and 0 (FALSE) is returned If dir is not 0 trying to go beyond the first (last) message during skip-previous (skip-next) operation results with the first (last) message selected as the current message and 0 (FALSE) is returned NSAM265SF This command should be executed after the CompactSPEECH is configured (see CFG and GCFG commands) Performs a soft reset of the CompactSPEECH as follows INIT NSAM265SR Initialize System P Playback NSAM265SF NSAM265SR Begins playback of the current message The CompactSPEECH state changes to PLAY When playback is complete the CompactSPEECH sets the EV NORMAL END bit in the status word and activates (sets to low) the MWRQST signal Playback can be paused with the PA command and can be resumed later with the RES command PA NSAM265SR Pause NSAM265SF Suspends the execution of the current Say command R P or GT command The PA command does not change the state of the CompactSPEECH execution can be resumed with the RES command The S command switches the CompactSPEECH to the IDLE state Note DTMF and tone detectors remain active during Pause  lnitializes the message directory information NSAM265SR all messages are deleted NSAM265SF messages are not deleted To delete the messages use the DM and DMS commands  Sets the detectors mask to 0  Sets the playback speed to normal (0)  In the NSAM265SR marks the entire ARAM as good (no defective rows) PDM Go To Power-Down Mode NSAM265SF NSAM265SR Switches the CompactSPEECH to power-down mode (see Section 2 13 for details)  In the NSAM265SF completes a garbage collection operation to ensure consistency of the FLASH memory manager (required only if the command is executed after power failure which happened during garbage collection) 26 3 0 Command Set (Continued) R NSAM265SR Record tag NSAM265SF S NSAM265SR Stop Records a new message with message tag tag The CompactSPEECH state changes to RECORD The R command continues execution until stopped by the S command Recording can be paused with the PA command and can be resumed later with the RES command If the memory becomes full recording stops and EV MEMFULL is set in the status word NSAM265SF EV MEMFULL is also set in the NSAM265SF if there is only one AFLASH block available for recording and the MESSAGE SAFE bit in the tag parameter is set NSAM265SR If an attempt to record more than the maximum number of messages is made an ERR INVALID error is reported Note A time day stamp is automatically attached to each message Before using the R command for the first time use the SETD command Failure to do so results in undefined values for the time and day stamp NSAM265SF Stops execution of the current command and switches the CompactSPEECH to the IDLE state S may be used to stop execution of all the Say commands and the FR P R GT RRAM and WRAM commands Say Argumented Sentence sentence n arg NSAM265SR NSAM265SF SAS announces sentence number sentence n of the currently selected vocabulary and passes arg to it sentence n and arg are each 1-byte long When playing is complete the CompactSPEECH sets the EV NORMAL END bit in the status word and activates the MWRQST signal If you are using an internal vocabulary you can synthesize the two built-in sentences These sentences are Time and Day and You Have These sentences are designated 0 and 1 respectively in the internal vocabulary sentence table Sentence 0 If the internal vocabulary is selected the built-in Time and Day sentence is synthesized If an external vocabulary is selected it is assumed that the Time and Day sentence is defined as sentence 0 in the sentence table For example use SAS 0 0 to synthesize the current time and day Sentence 1 If the internal vocabulary is selected the built-in You Have sentence is synthesized If an external vocabulary is selected it is assumed that the You Have sentence is defined as sentence 1 in the sentence table For example use SAS 1 5 to synthesize the sentence You Have 5 Messages If sentence n is not defined in the current vocabulary ERR PARAM is set in the error word For further information on sentences 0 and 1 and their options see Table 1-3 SAS Skip Backward time length NSAM265SR NSAM265SF Retreats in the current message time length units each of 0 2 seconds duration and cause message playback to pause time length is a 2-byte parameter that may have any value up to 320 i e 64 seconds The skip accuracy is 0 14 seconds This command is meaningful only in the PLAY state The RES command must be issued to continue playback If the beginning of the message is detected during execution of the SB command execution of this command is terminated the EV NORMAL END bit in the status register is set the MWRQST signal is activated and the CompactSPEECH switches to the IDLE state If time length is greater than 320 ERR PARAM is set in the error word SB SDET Set Detectors Mask detectors mask NSAM265SR NSAM265SF Controls the reporting of detection for tones and VOX according to the value of the detectors mask parameter A bit set to 1 in the mask enables the reporting of the corresponding detector A bit cleared to 0 disables the reporting Disabling reporting of a detector does not stop or reset the detector RDET Reset Detectors detectors reset mask NSAM265SR NSAM265SF Resets the CompactSPEECH tone and energy detectors according to the value of the detectors reset mask parameter A bit set to 1 in the mask resets the corresponding detector A bit cleared to 0 is ignored The 1-byte detectors reset mask is encoded as follows Bit 0 Bits 1 – 4 Bit 5 Bit 6 Bit 7 Reset the Reserved Reset the Reset the Reserved busy and dial tone detectors Must be set to 0 no energy (VOX) detector DTMF detector Must be set to 0 RES Resume NSAM265SF NSAM265SR Resumes the activity that was suspended by the PA command RRAM NSAM265SR Read RAM NSAM265SF Returns 32 bytes from the current message The first RRAM command issued returns the first 32 bytes of the current message Subsequent RRAM commands return the next following 32 bytes from the message until the end of the message The command sequence can be stopped by the S command Notes When the end of the message is detected during RRAM execution the CompactSPEECH sets the EV NORMAL END bit in the status word If the current message was created with the WRAM command the 32-byte return value should be ignored When using WRAM and RRAM to write and read messages of arbitrary length the microcontroller is responsible to mark the actual end of the message (e g with a delimiter string) The next RRAM command after the end of the message is reached starts again from the beginning of the current message 27 3 0 Command Set (Continued) The 1-byte detectors mask is encoded as follows Bit 0 Report detection of a busy tone Bit 1 Report detection of a dial tone Bits 2 – 4 Reserved Must be set to 0 Bit 5 Report detection of no energy (VOX) on the line (The VOX attributes are specified with the tunable parameters VOX TIME COUNT and VOX ENERGY LEVEL ) Bit 6 Report the ending of a detected DTMF Bit 7 Report the start of a detected DTMF (up to 40 ms after detection start) SE Skip to End of Message NSAM265SF NSAM265SR This command is valid only in PLAY state When invoked playback is suspended (as for the PA command) and a jump to the end of the message is performed Playback remains suspended after the jump Set Time and Day time and day NSAM265SR NSAM265SF Sets the system time of day as specified by bits 0–13 in the 2-byte time and day parameter The time and day parameter is encoded as follows Bits 0 – 2 Day of the week (1 through 7) When the internal vocabulary is used the first day of the week is Monday Bits 3 – 7 Hour of the day (0 through 23) Bits 8 – 13 Minute of the hour (0 through 59) Bits 14 – 15 These bits must be set to 1 If time and day is not valid ERR PARAM is set in the error word SETD Skip Forward time length NSAM265SR NSAM265SF Advances in the current message time length units each of 0 2 seconds duration and causes message playback to pause time length is a 2-byte parameter that may have any value up to 320 i e 64 seconds The skip accuracy is 0 14 seconds This command is meaningful only in the PLAY state The RES command must be issued to continue playback If the end of the message is detected during execution of SF execution of the command is terminated the EV NORMAL END bit in the status register is set the MWRQST signal is activated and CompactSPEECH switches to the IDLE state SF Set Message Tag message tag NSAM265SR NSAM265SF Sets the tag of the current message The 2-byte message tag can be used to implement mailbox functions by including SMT the mailbox number in the tag or to handle old and new messages differently by using one bit in the tag to mark the message as old or new See Section 1 5 To change the tag of a message we recommend that you read the message tag modify it and write it back If the current message is undefined results are unpredictable NSAM265SF Bits in the message tag may be cleared but not set NSAM265SR Bits 7 – 15 of the tag are ignored SO Say One Word word number NSAM265SR NSAM265SF Plays the word number word number in the current vocabulary The 1-byte word number may be any value from 0 through the index of the last word in the vocabulary When playback of the selected word has been completed the CompactSPEECH sets the EV NORMAL END bit in the status word and activates the MWRQST signal If word number is not defined in the current vocabulary or if it is an IVS control or option code ERR PARAM is set in the error word SPS Set Playback Speed speed NSAM265SR NSAM265SF Sets the speed of message playback as specified by the speed parameter The new speed applies to all recorded messages and synthesized messages (only if synthesized using external voice synthesis) until changed by another SPS command If this command is issued while the CompactSPEECH is in the PLAY state the speed also changes for the message currently being played back speed may be one of 13 values from b6 to a 6 A value of 0 represents normal speed Note that a negative speed value represents an increase in speed a positive value represents a decrease in speed The change in speed is approximate and dependent on the recorded data If speed is not in the b6 to a 6 range ERR PARAM is set in the error word SS Say Sentence sentence n NSAM265SR NSAM265SF Say sentence number sentence n of the currently selected vocabulary sentence n is 1-byte long When playing has been completed the CompactSPEECH sets the EV NORML END bit in the status word and activates the MWRQST signal If sentence n is not defined in the current vocabulary ERR PARAM is set in the error word 28 3 0 Command Set (Continued) SV Set Vocabulary Type type id NSAM265SR NSAM265SF This command selects the vocabulary table to be used for voice synthesis The vocabulary type is set according to the 1-byte type parameter 0 Internal vocabulary (default) 1 External vocabulary in ROM 2 External vocabulary in AFLASH (NSAM265SF only) all others Reserved If type is 0 id is ignored Each external vocabulary table has a unique id which is part of the vocabulary internal header (See the IVS User’s Manual for more details) If type is 1 or 2 the CompactSPEECH searches for the one byte id parameter in each vocabulary table header until a match is found If the id parameter does not point to a valid IVS vocabulary ERR PARAM is set in the error word SW Say Words n word1 wordn NSAM265SR NSAM265SF This command accepts the number of words to synthesize (n 1 byte) followed by the indexes of the words (1 byte each) in the current vocabulary n can be 1 to 8 It plays the words On completion the EV NORMAL END bit in the status word is set and the MWRQST signal goes low If one of the words is not defined in the current vocabulary or if it is an IVS control or option code ERR PARAM is set in the error word TUNE Tune index parameter value NSAM265SR NSAM265SF Sets the value of the tunable parameter identified by index (one byte) to the 2-byte value parameter value This command may be used to tune the DSP algorithms to a specific Data Access Arrangement (DAA) interface or to change other parameters If you do not use TUNE the CompactSPEECH uses default values If index does not point to a valid tunable parameter ERR PARAM is set in the error word Note The tunable parameters are assigned with their default values on application of power The INIT command does not affect these parameters Table 3-1 describes the tunable parameters their index numbers and their default values TABLE 3-1 Tunable Parameters Index 0–3 4 Parameter Name Reserved SIL THRESHOLD Prevents speech from being interpreted as silence The silence detection algorithm has an adaptive threshold which is changed according to the noise level This parameter is therefore only the initial threshold level Legal values 9216 to 13824 in 512 (6 dB) steps 5 SIL THRESHOLD STEP Defines the adaptive threshold changes step If this threshold is too low the threshold converges too slowly If this threshold is too high silence detection is too sensitive to any noise Legal values 3 to 48 6 SIL BURST THRESHOLD The minimum time period for speech detection during silence As this threshold increases the time period interpreted as silence increases If this threshold is too low speech is detected if there is a burst of noise If it is too high words may be partially cut off Legal values 1 to 3 7 SIL HANG THRESHOLD The minimum time period for silence detection during speech As this threshold increases the time period interpreted as silence decreases If this threshold is too low words may be partially cut off If it is too high silence is detected Legal values 8 to 31 8 9 SIL ENABLE FACTOR Silence compression control 0 turns silence compression off Determines the energy level used to synthesize silence The default value means that the energy level of the synthesized silence will be the same as the energy level of the recorded silence If you divide (multiply) the default value by two the synthesized silence will be 6 dB less (more) than the level of the recorded silence Legal values 1024 to 16384 1 8192 15 2 12 11264 Description Default ENERGY 29 3 0 Command Set (Continued) TABLE 3-1 Tunable Parameters (Continued) Index 10 VOX Parameter Name ENERGY THRESHOLD Description This constant determines the minimum energy level at which voice is detected Below this level it is interpreted as silence If you divide (multiply) the value by 2 you get 3 dB decrease (increase) in the threshold Legal values 0 to 65535 11 12 Reserved VOX TIME COUNT This constant in units of 10 ms determines the period of silence before the CompactSPEECH reports silence Legal values 0 to 65535 13 – 14 Reserved 15 VOICE SYNTHESIS LEVEL Controls the energy level at which internal vocabulary words are output Each unit represents 3 dB The default level is the reference level For example if you set this parameter to 4 the energy level is 6 dB less than the default level The actual output level is the sum of VOICE SYNTHESIS LEVEL and the VOL LEVEL variable controlled by the VC (Volume Control) command The synthesized speech is distorted when the level is set too high The valid range is 0 s VOICE 16 TONE GENERATION LEVEL SYNTHESIS LEVEL a VOL LEVEL s 12 6 6 700 Default 12 Controls the energy level at which DTMF and other tones are generated Each unit represents 3 dB The default level is the reference level For example if you set this parameter to 4 the energy level is 6 dB less than the default level The actual output level is the sum of TONE GENERATION LEVEL and the VOL LEVEL variable controlled by the VC command The tones are distorted when the level is set too high The valid range is 0 s TONE GENERATION LEVEL a VOL LEVEL s 12 17 18 Reserved TONE TIME COUNT Controls the duration of a tone before it is reported as a dial tone in 10 ms units Legal values 0 to 65535 700 19 TONE ON ENERGY THRESHOLD Minimum energy level at which busy and dial tones are detected as ON (after 700 Hz filtering) If you divide (multiply) the value by 2 you get 3 dB decrease (increase) in the threshold Legal values 0 to 65535 160 20 TONE OFF ENERGY THRESHOLD Maximum energy level at which busy and dial tones are detected as OFF (after 700 Hz filtering) If you divide (multiply) the value by 2 you get 3 dB decrease (increase) in the threshold Legal values 0 to 65535 110 21 VCD LEVEL Controls the energy during playback and external voice synthesis Each unit represents 3 dB The default level is the reference level For example if you set this parameter to 4 the energy level is 6 dB less than the default level The actual output level is the sum of VCD LEVEL and the VOL LEVEL variable controlled by the VC command The speech is distorted when the level is set too high The valid range is 0 s VCD LEVEL a VOL LEVEL s 12 6 22 VOX TOLERANCE TIME Controls the maximum energy period in 10 ms units that does NOT reset the vox detector Legal values 0 to 255 3 23 MIN BUSY DETECT TIME Minimum time period for busy detection in 10 ms units Legal values 0 to 65535 600 30 3 0 Command Set (Continued) TABLE 3-1 Tunable Parameters (Continued) Index 24 Parameter Name ECHO DELAY Description The near echo delay in samples For example the default value is computed as follows The near echo delay is assumed 500 ms Since the sampling rate is 8000 Hz (i e 125 ms per sample) the value of ECHO DELAY is 4 Legal values 0 to 255 25 26 Reserved DTMF REV TWIST Controls the reverse twist level at which CompactSPEECH detects DTMF tones While the normal twist is set at 8 dB the reverse twist can be either 8 dB (default) or 4 dB (If this parameter is set to 1) A one byte value that controls the twist level of a DTMF tone generated by the GT command by controlling the energy level of each of the two tones (low frequency and high frequency) composing the DTMF tone The Least Significant Nibble (LSN) controls the low tone and the Most Significant Nibble (MSN) controls the high tone The energy level of each tone as measured on the output of a TP3054 codec (before the DAA) connected to the CompactSPEECH is summarized in the following table Nibble Value Tone energy (dB-Volts) 0 0 b 17 8 1 b 14 3 2 b 12 9 3 b 12 4 4 b 12 0 5 b 11 9 6 b 11 85 7 b 11 85 8 – 15 The volume of the generated tone during meaurements was 6 (TONE GENERATION LEVEL a VOL LEVEL e 6) The default level means that the high tone is at b14 3 dBv and the low tone at b 12 4 dBv which gives DTMF twist level of 1 9 dB VC Volume Control vol level NSAM265SR NSAM265SF Controls the energy level of all the output generators (playback tone generation and voice synthesis) with one command The resolution is 3 dB The actual output level is composed of the tunable level variable plus the vol level The valid range for the actual output level of each output generator is defined in Table 3-1 For example if the tunable variable VCD LEVEL is 6 and vol level is b2 then the output level equals VCD LEVEL a vol level e 4 WRAM Write RAM tag data NSAM265SR NSAM265SF This command creates a new message with a message tag tag The following 32 bytes of data are stored as the new message data in the message memory The WRAM command switches the CompactSPEECH to the MEMORY WRITE state As long as it remains in this state each subsequent WRAM command appends new message data to the end of the previous data The CompactSPEECH remains in the MEMORY WRITE state until an S command is issued Note that while the CompactSPEECH is in MEMORY WRITE state the tag parameter is ignored If the memory becomes full recording stops and EV MEMFULL is set in the status word EV MEMFULL will be also set in the NSAM265SF if there is only one AFLASH block available for recording and the MESSAGE SAFE bit in the tag parameter is set NSAM265SR If an attempt to record more than the maximum number of messages is made an ERR INVALID error is reported 0 Default 4 27 DTMF TWIST LEVEL 66 31 Appendix A Device Specifications This appendix describes the pins and signals of the NSAM265SR and NSAM265SF CompactSPEECH processors specifies its maximum ratings and its electrical characteristics and describes its timing A 1 PIN ASSIGNMENT The following sections list the pins of the NSAM265SR and NSAM265SF CompactSPEECH processors They indicate which signals use the same pin and under what conditions each signal is enabled for that pin Slashes separate the names of signals that share the same pin A 1 1 Pin-Signal Assignment Table A-1 shows all the pins and the signals that use them in different configurations It also shows the type and direction of each signal TABLE A-1 CompactSPEECH Pin-Signal Assignment under Different Conditions Pin Name A(0 15) CAS (Note A) CCLK CDIN CDOUT CFS0 D(0 1) D2 RA11 D(3 7) DWE MWCS WR0 TST MWDRY MWRQST MWDOUT PB(0 5) (Note D) PB6 (Note E) EMCS ENV0 Type TTL TTL1 (Note B) TTL TTL TTL TTL TTL TTL TTL TTL1 (Note B) TTL (Note C) TTL TTL TTL TTL TTL TTL TTL1 (Note B) CMOS (Note F) MWCLK MWDIN RAS (Note A) RESET VCC VSS X1 X2 CLKIN Note A Used in NSAM265SR only N C in NSAM265SF Note B TTL1 output signals provide CMOS levels in the steady state for small loads Note C Schmitt trigger input Note D NSAM265SR and NSAM265SF virtual address lines for IVS ROM NSAM265SF only virtual address lines for FLASH Note E Used in NSAM265SF only enables disable FLASH Note F Input during reset CMOS level input Signal Name A(0 15) CAS CCLK CDIN CDOUT CFS0 D(0 1) D2 RA11 D(3 7) DWE MWCS WR0 TST MWDRY MWRQST MWDOUT EA(16 21) AFLASH OE EMCS ENV0 MWCLK MWDIN RAS RESET VCC VSS X1 X2 CLKIN IO Output Output Output Input Output Output IO IO IO Output Input Output Input IO IO Output Output Output Output Input Input Input Output Input TTL TTL TTL1 (Note B) Schmitt (Note C) Power Power XTAL XTAL TTL OSC OSC Input 32 Appendix A Device Specifications (Continued) A 1 2 PIN ASSIGNMENT IN THE 68-PLCC PACKAGE TL EE 12378 – 17 FIGURE A-1 68-PLCC Package Connection Diagram 33 Appendix A Device Specifications (Continued) A 1 3 PIN ASSIGNMENT IN THE 100-PQFP PACKAGE TL EE 12378 – 18 FIGURE A-2 100-PQFP Package Connection Diagram 34 Appendix A Device Specifications (Continued) A 2 ABSOLUTE MAXIMUM RATINGS If Military Aerospace specified devices are required please contact the National Semiconductor Sales Office Distributors for availability and specifications b 65 C to a 150 C Storage Temperature Temperature Under Bias 0 C to a 70 C All Input or Output Voltages with Respect to GND b 0 5V to a 6 5V Note Absolute maximum ratings indicate limits beyond which permanent damage may occur Continuous operation at these limits is not intended operation should be limited to those conditions specified below A 3 ELECTRICAL CHARACTERISTICS TA e 0 C to a 70 C VCC e 5V g 10% GND e 0V Symbol VIH VIL VXH VXL VENVh VHh VHI Vhys VOH VOHWC Parameter TTL Input Logical 1 Input Voltage TTL Input Logical 0 Input Voltage CLKIN Input High Voltage CLKIN Input Low Voltage ENV0 High Level Input Voltage CMOS Input with Hysteresis Logical 1 Input Voltage CMOS Input with Hysteresis Logical 0 Input Voltage Hysteresis Loop Width (Note A) Logical 1 TT Output Voltage RAS CAS DWE and EMCS Logical 1 Output Voltage Logical 0 TTL Output Voltage IOH e b0 4 mA IOH e b0 4 mA IOH e b50 mA (Note B) IOL e 4 mA IOL e 50 mA (Note B) VOLWC RAS CAS DWE and EMCS Logical 0 Output Voltage Input Load Current (Note C) Output Leakage Current (I O Pins in Input Mode) (Note C) Active Supply Current Standby Supply Current Power-Down Mode Supply Current X1 and X2 Capacitance (Note A) IOL e 4 0 mA IOL e 50 mA (Note B) 0V s VIN s VCC 0V s VOUT s VCC Normal Operation Mode Running Speech Applications (Note D) Normal Operation Mode DSPM Idle (Note D) Power-Down Mode (Notes D and E) 17 b5 0 b5 0 Conditions Min 20 b0 5 Typ Max VCC a 05 08 Units V V V External Clock External Clock 20 08 36 36 11 05 24 24 VCC b 0 2 0 45 02 0 45 02 50 50 65 40 15 80 V V V V V V V V V V V V VOL IL IO (Off) ICC1 ICC2 ICC3 CX mA mA mA mA pF Note A Guaranteed by design Note B Measured in power-down mode The total current driven or sourced by all the CompactSPEECH’s output signals is less than 50 mA Note C Maximum 20 mA for all pins together Note D IOUT e 0 TA e 25 C VCC e 5V operating from a 40 96 MHz crystal and running from internal memory with Expansion Memory disabled Note E All input signals are tied to 1 or 0 (above VCC b 0 5 or below VSS a 0 5V) 35 Appendix A Device Specifications (Continued) A 4 SWITCHING CHARACTERISTICS A 4 1 DEFINITIONS All timing specifications in this section refer to 0 8V or 2 0V on the rising or falling edges of the signals as illustrated in Figures A-3 through A-10 unless specifically stated otherwise Maximum times assume capacitive loading of 50 pF CLKIN crystal frequency is 40 96 MHz Note CTTL is an internal signal and is used as a reference to explain the timing of other signals See Figure A-21 TL EE 12378 – 19 Signal valid active or inactive time after a rising edge of CTTL or MWCLK FIGURE A-3 Synchronous Output Signals (Valid Active and Inactive) TL EE 12378 – 20 Signal valid time after a falling edge of MWCLK FIGURE A-4 Synchronous Output Signals (Valid) TL EE 12378 – 21 Signal hold time after a rising edge of CTTL FIGURE A-5 Synchronous Output Signals (Hold) 36 Appendix A Device Specifications (Continued) TL EE 12378 – 22 Signal hold time after a falling edge of MWCLK FIGURE A-6 Synchronous Output Signals (Hold) TL EE 12378 – 23 Signal setup time before a rising edge of CTTL or MWCLK and signal hold time after a rising edge of CTTL or MWCLK FIGURE A-7 Synchronous Input Signals 37 Appendix A Device Specifications (Continued) TL EE 12378 – 24 Signal B starts after rising or falling edge of signal A FIGURE A-8 Asynchronous Signals RESET has Schmitt trigger input buffers Figure A-9 shows the input buffer characteristics TL EE 12378 – 25 FIGURE A-9 Hysteresis Input Characteristics 38 Appendix A Device Specifications (Continued) A 4 2 SYNCHRONOUS TIMING TABLES In this section R E means RIsing Edge and F E means Falling Edge TABLE A-2 Timing for Output Signals Symbol tAh tAv tCASa tCASh tCASia tCASLw tCCLKa tCCLKh tCCLKia tCDOh tCDOv tCTp tDCSh tDf tDh tDv tDWEa tDWEh tDWEia tEMCSa tEMCSh tEMCSia tFSa tFSh tFSia tMWDOf tMWDOh tMWDOnf tMWDOv tMWITOp tMWDRYa tMWDRYia tPABCh tPABCv tRASa Figure A-10 A-10 A-10 A-10 A-10 A-13 A-14 A-14 A-14 A-14 A-14 A-21 A-17 A-11 A-11 A-11 A-11 A-11 A-11 A-16 A-16 A-16 A-14 A-14 A-14 A-18 A-18 A-18 A-18 A-19 A-18 A-18 A-20 A-20 A-10 Description Address Hold Address Valid CAS Active CAS Hold CAS Inactive DRAM PDM CAS Width CCLK Active CCLK Hold CCLK Inactive CDOUT Hold CDOUT Valid CTTL Clock Period (Note A) Data Hold after EMCS (Note B) Data and RA11 Float (D0 7) (Note B) Data Hold (D0 7) Data Valid (D0 7) DWE Active DWE Hold DWE Inactive EMCS Active EMCS Hold EMCS Inactive CFS0 Active CFSO Hold CFSO Inactive MICROWIRE Data Float (Note B) MICROWIRE Data Out Hold (Note B) MICROWIRE Data No Float (Note B) MICROWIRE Data Out Valid (Note B) MWDIN to MWDOUT MWDRY Active MWDRY Inactive PB and MWRQST PB and MWRQST RAS Active Reference Conditions After R E CTTL After R E CTTL T1 or T2W3 After R E CTTL T2W or T2W1RF After R E CTTL After R E CTTL T3 or T3RF At 0 8V Both Edges After R E CTTL After R E CTTL After R E CTTL After R E CTTL After R E CTTL R E CTTL to next R E CTTL R E EMCS to R E Data Float After R E CTTL T3 or T3H After R E CTTL T3 or T3H After R E CTTL T2 or T2W1 After R E CTTL T2W2 After R E CTTL After R E CTTL T3 After R E CTTL T2W1 After R E CTTL After R E CTTL T3 After R E CTTL After R E CTTL After R E CTTL After R E MWCS After F E MWCK After F E MWCS After F E MWCK Propagation Time After R E of CTTL After F E MWCLK After R E CTTL After R E CTTL T2W1 After R E CTTL T2W1 or T2WRF 00 00 00 12 0 12 0 00 00 70 0 70 0 70 0 35 0 70 0 00 25 0 70 0 00 12 0 25 0 00 12 0 12 0 48 8 10 0 tCTp 2 b 6 tCTp 2 b 6 12 0 12 0 tCTp 2 a 12 00 12 0 50 000 00 12 0 600 0 12 0 00 12 0 Min (ns) 00 12 0 12 0 Max (ns) 39 Appendix A Device Specifications (Continued) TABLE A-2 Timing for Output Signals (Continued) Symbol tRASh tRASia tRASLw tRLCL tWRa tWRCSh tWRh tWRia Figure A-10 A-10 A-13 A-13 A-17 A-17 A-17 A-17 RAS Hold RAS Inactive DRAM PDM RAS Width DRAM PDM RAS Low after CAS Low WR0 Active WR0 Hold after EMCS (Note B) WR0 Hold WR0 Inactive Description Reference Conditions After R E CTTL After R E CTTL T3 or T3RF At 0 8V Both Edges F E CAS to F E RAS After R E CTTL T1 R E EMCS R E to R E WR0 After R E CTTL After R E CTTL T3 10 0 tCTp 2 b 6 tCTp 2 a 12 200 0 200 0 tCTp 2 a 12 Min (ns) 00 12 0 Max (ns) Note A In normal operation tCTp must be 48 8 ns in power-down mode tCTp must be 50 000 ns Note B Guaranteed by design but not fully tested Table A-3 Input Signals Symbol tCDIh tCDIs tDIh tDIs tMWCKh tMWCKI tMWCKp tMWCLKh tMWCLKs tMWCSh tMWCSs tMWDIh tMWDIs tPWR tRSTw tXh tXI tXp Figure A-14 A-14 A-10 A-10 A-18 A-18 A-18 A-18 A-18 A-18 A-18 A-18 A-18 A-23 A-22 A-21 A-21 A-21 CDIN Hold CDIN Setup Data in Hold (D0 7) Data in Setup (D0 7) MICROWIRE Clock High (Slave) MICROWIRE Clock Low (Slave) MICROWIRE Clock Period (Slave) (Note A) MWCLK Hold MWCLK Setup MWCS Hold MWCS Setup MWDIN Hold MWDIN Setup Power Stable to RESET R E (Note B) RESET Pulse Width CLKIN High CLKIN Low CLKIN Clock Period Description Reference Conditions After R E CTTL Before R E CTTL After R E CTTL T1 T3 or TI Before R E CTTL T1 T3 or TI At 2 0V (Both Edges) At 0 8V (Both Edges) R E MWCLK to next R E MWCLK After MWCS becomes Inactive Before MWCS becomes Active After F E MWCLK Before R E MWCLK After R E MWCLK Before R E MWCLK After VCC reaches 4 5V At 0 8V (Both Edges) At 2 0V (Both Edges) At 0 8V (Both Edges) R E CLKIN to next R E CLKIN Min (ns) 00 11 0 00 15 0 100 0 100 0 2 5 ms 50 0 100 50 0 100 0 50 0 100 0 30 ms 10 ms tX1p 2 b 5 tX1p 2 b 5 24 4 Note A Guaranteed by design but not fully tested in power-down mode Note B Guaranteed by design but not fully tested 40 Appendix A Device Specifications (Continued) A 4 3 TIMING DIAGRAMS TL EE 12378 – 26 Note 1 This cycle may be either TI (Idle) or T1 of any non-DRAM bus cycle If the next bus cycle is to DRAM T3 is followed by three TI (Idle) cycles Note 2 An external device can drive data from T2W3 to T3 Note 3 An external device can not drive data from T1 to T2W3 FIGURE A-10 DRAM Read Cycle Timing (NSAM265SR only) 41 Appendix A Device Specifications (Continued) TL EE 12378 – 27 Note 1 This cycle may be either TI (Idle) or T1 of any non-DRAM bus cycle If the next bus cycle is to DRAM T3 is followed by three TI (Idle) cycles Note 2 An external device can not drive data from T1 to T2W3 FIGURE A-11 DRAM Write Cycle Timing (NSAM265SR only) 42 Appendix A Device Specifications (Continued) TL EE 12378 – 28 Note This cycle may be either TI (Idle) or T1 of any non-DRAM bus cycle If the next bus cycle is a DRAM one T3RF is followed by three TI (Idle) cycles FIGURE A-12 DRAM Refresh Cycle Timing (Normal Operation) TL EE 12378 – 29 FIGURE A-13 DRAM Power-Down Refresh Cycle Timing 43 Appendix A Device Specifications (Continued) TL EE 12378 – 30 FIGURE A-14 Codec Short Frame Timing TL EE 12378 – 31 FIGURE A-15 Codec Long Frame Timing 44 Appendix A Device Specifications (Continued) TL EE 12378 – 32 Note 1 This cycle may be either TI (Idle) T3 or T3H Note 2 Data can be driven by an external device at T2W1 T2W T2 and T3 FIGURE A-16 ROM FLASH Read Cycle Timing TL EE 12378 – 33 Note 1 This cycle may be either TI (Idle) T3 or T3H Note 2 Depends on which bytes are written FIGURE A-17 FLASH Write Cycle Timing (NSAM265SF only) 45 Appendix A Device Specifications (Continued) TL EE 12378 – 34 FIGURE A-18 MICROWIRE Transaction Timing Data Transmitted to Output TL EE 12378 – 35 FIGURE A-19 MICROWIRE Transaction Timing Data Echoed to Output 46 Appendix A Device Specifications (Continued) TL EE 12378 – 36 Note 1 This cycle may be either TI (Idle) T2 T3 or T3H FIGURE A-20 Output Signal Timing for Port PB and MWRQST TL EE 12378 – 37 FIGURE A-21 CTTL and CLKIN Timing TL EE 12378 – 38 FIGURE A-22 Reset Timing When Reset Is Not At Power-Up TL EE 12378 – 39 FIGURE A-23 Reset Timing When Reset Is At Power-Up 47 Appendix B Schematic Diagrams The following schematic diagrams are extracted from a CompactSPEECH demo unit based on the NSV-AM265SPAF board designed by National Semiconductor This demo includes three basic clusters  COP888EEG Microcontroller  CompactSPEECH cluster including a TP3054 codec and either an NSAM265SR controlling two 1M x 4 ARAMs or an NSAM265SF connected to one (AMD or INTEL) FLASH device  User interface that includes one 16-digit LCD and 16-key (4x4) key-pad For more details about the demo please refer to the NS Digital Answering Machine Demo Operating Instructions 48 49 TL EE 12378 – 40 Appendix B Schematic Diagrams (Continued) 50 TL EE 12378 – 41 Appendix B Schematic Diagrams (Continued) 51 TL EE 12378 – 42 Appendix B Schematic Diagrams (Continued) 52 TL EE 12378 – 43 Appendix B Schematic Diagrams (Continued) 53 TL EE 12378 – 44 Appendix B Schematic Diagrams (Continued) 54 TL EE 12378 – 45 Appendix B Schematic Diagrams (Continued) 55 TL EE 12378 – 46 Appendix B Schematic Diagrams (Continued) 56 Physical Dimensions inches (millimeters) 100-Pin Molded Plastic Quad Flat Package (EIAJ) Order Number NSAM265SRA SFA NS Package Number VLJ100A 57 NSAM265SR NSAM265SF CompactSPEECH Digital Speech Processors Physical Dimensions inches (millimeters) (Continued) 68-Pin Plastic Leaded Chip Carrier (V) Order Number NSAM265SRA SFA NS Package Number V68A LIFE SUPPORT POLICY NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL SEMICONDUCTOR CORPORATION As used herein 1 Life support devices or systems are devices or systems which (a) are intended for surgical implant into the body or (b) support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in a significant injury to the user National Semiconductor Corporation 1111 West Bardin Road Arlington TX 76017 Tel 1(800) 272-9959 Fax 1(800) 737-7018 2 A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system or to affect its safety or effectiveness National Semiconductor Europe Fax (a49) 0-180-530 85 86 Email cnjwge tevm2 nsc com Deutsch Tel (a49) 0-180-530 85 85 English Tel (a49) 0-180-532 78 32 Fran ais Tel (a49) 0-180-532 93 58 Italiano Tel (a49) 0-180-534 16 80 National Semiconductor Hong Kong Ltd 13th Floor Straight Block Ocean Centre 5 Canton Rd Tsimshatsui Kowloon Hong Kong Tel (852) 2737-1600 Fax (852) 2736-9960 National Semiconductor Japan Ltd Tel 81-043-299-2309 Fax 81-043-299-2408 National does not assume any responsibility for use of any circuitry described no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications