1N4444

1N4444 General Purpose Silicon Rectifier DO−35 Type Package Absolute Maximum Ratings: Continuous Reverse Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V Average Forward Current, IF(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA Repetitive Peak Forward Current, IFRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mA Forward DC Current, IF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mA Non−Repetitive Peak Forward Current (t =1s), IFSM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A Total Power Dissipation, Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +200C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +200C Lead temperature (During Soldering, 1/16” from case, 10sec) . . . . . . . . . . . . . . . . . . . . . . . . . +300C Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Symbol Min Typ Max Unit IF = 0.1mA 440 − 550 mV IF = 1mA 560 − 680 mV IF = 10mA 690 − 820 mV IF = 100mA 850 − 1000 mV V(BR)R IR = 5A 70 − − V IR VR = 50V − − 50 nA VR = 50V, TA = +150C − − 50 A Forward Voltage VF Breakdown Voltage Reverse Current Test Conditions Diode Capacitance Co VR = 0, Note 1 − − 2 pF Reverse Recovery Time trr IF = IR = 10mA, Recover to 1mA − − 7 ns 1.000 (25.4) Min .200 (5.08) Max .022 (.509) Dia Max Color Band Denotes Cathode .090 (2.28) Dia Max