1N4938

1N4938 General Purpose Silicon Rectifier DO−35 Type Package Absolute Maximum Ratings: (TA = +25C, Note 1 unless otherwise specified) Maximum Repetitive Reverse Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V Average Rectified Forward Current, IF(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Non−Repetitive Peak Forward Surge Current, IFSM Pulse Width = 1s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Pulse Width =1s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +200C Maximum Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . +300C Note 1. These ratings are limiting values above which the serviceability of the diode may be impaired and based on a maximum junction temperature of +200C. Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Breakdown Voltage VR IR = 100A 200 − − V Forward Voltage VF IF = 100mA − − 1 V Reverse Leakage IR VR = 75V − − 100 nA VR = 175V, TJ = +150C − − 100 A VR = 0, f = 1MHz − − 5 pF IF = 30mA, IR = 30mA, Irr = 1mA, RL = 100 − − 50 ns Total Capacitance Reverse Recovery Time CT tr 1.000 (25.4) Min .200 (5.08) Max .022 (.509) Dia Max Color Band Denotes Cathode .090 (2.28) Dia Max