2N2102

2N2102 Silicon NPN Transistor General Purpose Amplifier and Switch TO−39 Type Package Description: The 2N2102 is a silicon NPN transistor in a TO39 type package intended for a wide variety of small− signal and medium power applications in military and industrial equipment. Absolute Maximum Ratings: Collector−Base Voltage (IE = 0), VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V Collector−Emitter Voltage (IB = 0), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65V Collector−Emitter Voltage (RBE 10), VCER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Emitter−Base Voltage (IC = 0), VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Total Device Dissipation, PD TA  +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W TC  +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +175C Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +30C/W Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C/W Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter Collector Cutoff Current Symbol ICBO Test Conditions VCB = 60V TC = +150C Emitter Cutoff Current IEBO VBE = 5V Min Typ Max Unit − − 2 nA − − 2 A − − 5 nA Collector−Emitter Breakdown Voltage V(BR)CEO IC = 100A, IE = 0 120 − − V Collector−Emitter Sustaining Voltage VCEO(sus) IC = 30mA, IB = 0, Note 1 65 − − V Collector−Emitter Saturation Voltage VCE(sat) IC = 150mA, IB = 15mA, Note 1 − − 0.5 V Base−Emitter Saturation Voltage VCE(sat) IC = 150mA, IB = 15mA, Note 1 − − 1.1 V Note 1. Pulse Test: Pulse Width + 300s, Duty Cycle  1%. Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter Symbol DC Current Gain hFE Test Conditions VCE = 10V, Note 1 Min Typ Max IC = 10A 10 − − IC = 100A 20 − − IC = 10mA 35 − − IC = 150mA 40 − 120 IC = 500mA 25 − − IC = 1A 10 − − Unit High Frequency Current Gain hfe IC = 50mA, VCE = 10V, f = 20MHz, Note 1 − 6 − Noise Figure NF IC = 300A, VCE = 10V, f = 1KHz, BW = 1Hz, Rg = 510 − − 8 dB Collector−Base Capacitance CCBO IE = 0 VCB = 10V, f = 1MHz − − 15 pF Emitter−Base Capacitance CEBO IC = 0 VEB = 500mV, f = 1MHz − − 80 pF Note 1. Pulse Test: Pulse Width + 300s, Duty Cycle  1%. .370 (9.39) Dia Max .355 (9.03) Dia Max .260 (6.6) Max .500 (12.7) Min .018 (0.45) Base Emitter Collector/Case 45 .031 (.793)