2N2222A

2N2222A Silicon NPN Transistor Small Signal General Purpose Amplifier & Switch TO−18 Type Package Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800mA Total Device Dissipation, PD TA = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W Operating Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +200C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +200C Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 325C/W Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150C/W Note 1. Stresses exceeding Absolute Maximum Ratings may damage the devices. Maximum ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Electrical Characteristics: (TA = 25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit 40 − − V VCB = 60V − − 10 nA VCB = 75V − − 10 A VEB = 4V − − 10 nA VEB = 6V − − 10 A VCE = 50V − − 50 nA OFF Characteristics Collector−Emitter Breakdown Voltage Collector−Base Cutoff Current Emitter−Base Cutoff Current Collector−Emitter Cutoff Current V(BR)CEO IC = 10mA ICBO IEBO ICES Electrical Characteristics (Cont’d): (TA = 25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit 50 − − IC = 1mA 75 − 325 IC = 10mA 100 − − IC = 150mA 100 − 300 IC = 500mA 30 − − IC = 150mA, IB = 15mA − − 0.3 V IC = 500mA, IB = 50mA − − 1.0 V IC = 150mA, IB = 15mA 0.6 − 1.2 V IC = 500mA, IB = 50mA − − 2.0 V ON Characteristics (Note 1) DC Current Gain hFE Collector−Emitter Saturation Voltage Base−Emitter Saturation Voltage VCE = 10V IC = 0.1mA VCE(sat) VBE(sat) Small−Signal Characteristics Magnitude of Small-Signal Current Gain |hfe| IC = 20mA, VCE = 20V, f = 100MHz 2.5 − − Small−Signal Current Gain hfe IC = 1mA, VCE = 10V, f = 1kHz 50 − − Input Capacitance Cibo VEB = 5V, IC = 0, 100kHz  f  1MHz − − 25 pF Output Capacitance Cobo VCB = 10V, IE = 0, 100kHz  f  1MHz − − 8 pF Switching Characteristics Turn−On Time ton − − 35 ns Turn−Off Time toff − − 300 ns Note 1. Pulse Test: Pulse Width  300s, Duty Cycle  2%. .230 (5.84) Dia Max .195 (4.95) Dia Max .210 (5.33) Max .030 (.762) Max .500 (12.7) Min .018 (0.45) Base Emitter Collector 45 .041 (1.05)