2N2405

2N2405 Silicon NPN Transistor General Purpose, Medium Power TO−39 Type Package Description: The 2N2405 is a silicon NPN transistor in a TO−39 type package designed for use in high current, fast switching applications and for power amplifiers. Features: D For Operation at Junction Temperature up to +200C D Planar Construction fo Low Noise and Low Leakage D Low Output Capacitance Absolute Maximum Ratings: Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90V Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V Collector−Emitter Sustaining Voltage, VCER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Total Power Dissipation, PT TC  +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W TA  +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +200C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +200C Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35C/W Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175C/W Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter Collector−Emitter Sustaining Voltage Symbol Test Conditions VCEO(sus) IC = 30mA, IB = 0 IC = 100mA, IB = 0 VCER(sus) IC = 100mA, RBE = 10, Note 1 IC = 100mA, RBE = 500, Note 1 Min Typ Max Unit 90 − − V 90 − − V 140 − − V 120 − − V Collector−Base Breakdown Voltage V(BR)CBO IC = 0.1mA, IE = 0, Note 1 120 − − V Emitter−Base Breakdown Voltage V(BR)EBO IC = 0.1mA, IC = 0, Note 1 7 − − V VCB = 90V, IE = 0 − − 0.01 A VCB = 90V, IE = 0, TC = +150C − − 10 A VBE = −5V, IC = 0 − − 0.01 A IC = 150mA, IB = 15mA − − 0.5 V IC = 50mA, IB = 5mA, − − 0.2 V IC = 150mA, IB = 15mA − − 1.1 V IC = 50mA, IB = 5mA − − 0.9 V Collector Cutoff Current Emitter Cutoff Current Collector−Emitter Saturation Voltage Base−Emitter Saturation Voltage ICBO IEBO VCE(sat) VBE(sat) Note 1. Pulse Test: Pulse Duration = 300s, Duty Cycle  2%. Electrical Characteristics (Cont’d): (TC = +25C unless otherwise specified) Parameter Symbol DC Current Gain hFE Test Conditions Min Typ Max Unit IC = 10mA, VCE = 10V, Note 1 35 − − IC = 150mA, VCE = 10V, Note 1 60 − 200 IC = 10mA, VCE = 10V, TC = −55C, Note 1 20 − − VCE = 5V, IC = 5mA, f = 1kHz 50 275 − VCE = 10V, IC = 50mA, f = 20MHz 6 − − VCB = 5V, IC = 1mA, f = 1KHz 24 34 −  VCB = 10V, IC = 5mA, f = 1KHz 4 8 −  Dynamic Characteristics Small−Signal Current Gain hfe hib hrb hob Output Capacitance Cobo Cib VCB = 5V, IC = 1mA, f = 1KHz − − 3x104 VCB = 10V, IC = 5mA, f = 1KHz − − 3x104 VCB = 5V, IC = 1mA, f = 1KHz − − 0.5 mho VCB = 10V, IC = 5mA, f = 1KHz − − 0.5 mho VCB = 10V, IE = 0 − − 15 pF VBE = −0.5V, IC = 0 − − 80 pF Note 1. Pulse Test: Pulse Duration = 300s, Duty Cycle  2%. .370 (9.39) Dia Max .355 (9.03) Dia Max .260 (6.6) Max .500 (12.7) Min .018 (0.45) Base Emitter Collector/Case 45 .031 (.793)