2N2904

2N2904 Silicon PNP Transistor General Purpose TO−39 Type Package Description: The 2N2904 is a silicon PNP transistor in a TO−39 type package designed for small signal, general purpose and switching applications. Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mA Total Device Dissipation, PD TA = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800mW TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3W Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Collector Cutoff Current Symbol ICBO Test Conditions VCB = 50V Min Typ Max Unit − − 20 nA Collector−Base Breakdown Voltage V(BR)CBO IC = 10A 60 − − V Collector−Emitter Breakdown Voltage V(BR)CEO IC = 10mA 40 − − V Emitter−Base Breakdown Voltage V(BR)EBO IE = 10A 5 − − V IC = 150mA, IB = 15mA − − 0.4 V IC = 500mA, IB = 50mA − − 1.6 V IC = 150mA, IB = 15mA − − 1.3 V IC = 500mA, IB = 50mA − − 2.6 V IC = 100A, VCE = 10V 20 − − IC = 1mA, VCE = 10V 25 − − IC = 10mA, VCE = 10V 35 − − IC = 150mA, VCE = 10V 40 − 120 IC = 500mA, VCE = 10V 20 − − Collector−Emitter Saturation Voltage Base−Emitter Saturation Voltage DC Current Gain VCE(sat) VBE(sat) hFE Electrical Characteristics (Cont’d): TA = +25C unless otherwise specified) Parameter Current−Gain − Bandwidth Product Output Capacitance Symbol Test Conditions Min Typ Max Unit fT IC = 50mA, VCE = 20V, f = 100MHz 200 − − MHz VCB = 10V, f = 100kHz − − 8 pF Cobo Turn−On Time ton VCC = 30V, IC = 150mA, IB = 15mA − − 45 ns Turn−Off Time toff VCC = 6V, IC = 150mA, IB1 = IB2 = 15mA − − 180 ns .370 (9.39) Dia Max .355 (9.03) Dia Max .260 (6.6) Max .500 (12.7) Min .018 (0.45) Base Emitter Collector/Case 45 .031 (.793)