2N2907A

2N2907A Silicon PNP Transistor Small Signal Switching TO−18 Type Package Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mA Total Device Dissipation, PD TA = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W Operating Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +200C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +200C Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 325C/W Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150C/W Note 1. Stresses above those listed in Absolute Maximum Ratings may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damaged may occur and reliability may be affected. Electrical Characteristics: (TA = 25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit 60 − − V OFF Characteristics Collector−Emitter Breakdown Voltage V(BR)CEO IC = 10mA Collector−Emitter Cutoff Current ICES VCE = 50V − − 50 nA Collector−Base Cutoff Current ICBO VCB = 50V, IE = 0 − − 10 nA VCB = 60V, IE = 0 − − 10 A VEB = 4V − − 50 nA VEB = 5V − − 10 A VCE = 10V IC = 0.1mA 75 − − IC = 1mA 100 − 450 IC = 10mA 100 − − IC = 150mA 100 − 300 IC = 500mA 50 − − IC = 150mA, IB = 15mA − − 0.4 V IC = 500mA, IB = 50mA − − 1.6 V IC = 150mA, IB = 15mA 0.6 − 1.3 V IC = 500mA, IB = 50mA − − 2.6 V Emitter−Base Cutoff Current IEBO ON Characteristics (Note 2) DC Current Gain Collector−Emitter Saturation Voltage Base−Emitter Saturation Voltage hFE VCE(sat) VBE(sat) Note 2. Pulse Test: Pulse Width = 300s, Duty Cycle  2%. Electrical Characteristics (Cont’d): (TA = 25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Small−Signal Characteristics Magnitude of Small Signal Current Gain |hfe| IC = 20mA, VCE = 20V, f = 100MHz 2.0 − − Small−Signal Current Gain hfe IC = 1mA, VCE = 10V, f = 1kHz 100 − − Output Capacitance Cobo VCB = 10V, IE = 0, 100kHz  f  1MHz − − 8 pF Input Capacitance Cibo VEB = 2V, IC = 0, 100kHz  f  1MHz − − 30 pF Switching Characteristics Turn−On Time ton − − 45 ns Turn−Off Time toff − − 300 ns Note 2. Pulse Test: Pulse Width = 300s, Duty Cycle  2%. .230 (5.84) Dia Max .195 (4.95) Dia Max .210 (5.33) Max .030 (.762) Max .500 (12.7) Min .018 (0.45) Base Emitter Collector 45 .041 (1.05)