2N3392

2N3390, 2N3391, 2N3392 Silicon NPN Transistor General Purpose Amplifier TO−92 Type Package Absolute Maximum Ratings: (TA = +25C, Note 1 unless otherwise specified) Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Total Device Dissipation (TA = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0mW/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83.3C/W Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200C/W Note 1. These ratings are limiting values above which the serviceability of any semiconductor may be impaired. Note 2. These ratings are based on a maximum junction temperature of 150C. Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics Collector−Emitter Breakdown Voltage V(BR)CEO IC = 10mA, IB = 0, Note 3 25 − − V Collector−Base Breakdown Voltage V(BR)CBO IC = 10A, IE = 0 25 − − V Emitter−Base Breakdown Voltage V(BR)EBO IE = 10A, IC = 0 5.0 − − V Collector Cutoff Current ICBO VCB = 18V, IE = 0 − − 100 nA Emitter Cutoff Current IEBO VBE = 5V, IC = 0 − − 100 nA Note 3. Pulse Test: Pulse Width  300s, Duty Cycle  2% Electrical Characteristics (Cont’d): (TA = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max 400 − 800 2N3391 250 − 500 2N3392 150 − 300 Unit ON Characteristics (Note 3) DC Current Gain 2N3390 hFE VCE = 4.5V, IC = 2mA Small Signal Characteristics Output Capacitance Cob VCB = 10V, f = 1.0MHz 2.0 − 10 Small−Signal Current Gain 2N3390 hfe VCE = 4.5V, IC = 2mA, f = 1.0kHz 400 − 1250 250 − 800 150 − 500 − − 5.0 2N3391 2N3392 Noise Figure VBE(sat) VCE = 4.5V, IC = 100A, BW = 15.7kHz Note 3. Pulse Test: Pulse Width  300s, Duty Cycle  2% .135 (3.45) Min .210 (5.33) Max Seating Plane .500 (12.7) Min .021 (.445) Dia Max E C B .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .205 (5.2) Max .105 (2.67) Max pF dB