2N3440

2N3439 & 2N3440 Silicon NPN Transistor Power Amplifier & High Speed Switch TO−39 Type Package Absolute Maximum Ratings: (TC = +25C unless otherwise specified) Collector−Emitter Voltage, VCEO 2N3439 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350V 2N3440 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250V Collector−Base Voltage, VCBO 2N3439 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450V 2N3440 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Total Device Dissipation (TA = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800mW Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.75mW/C Total Device Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28.5mW/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +200C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +200C Electrical Characteristics: (T A = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics Collector-Emitter Breakdown Voltage 2N3439 2N3440 Collector Cutoff Current 2N3439 V(BR)CEO IC = 10mA, RBB1 = 470, VBB1 = 6V, L = 25mH (min), f = 30 to 60Hz ICEO 2N3440 2N3439 ICEX 2N3440 2N3439 ICBO 2N3440 Emitter Cutoff Current IEBO 350 − − V 250 − − V VCE = 300V − − 2.0 A VCE = 200V − − 2.0 A VCE = 450V, VBE = 1.5V − − 5.0 A VCE = 300V, VBE = 1.5V − − 5.0 A VCB = 360V − − 2.0 A VCB = 450V − − 5.0 A VCB = 250V − − 2.0 A VCB = 300V − − 5.0 A VEB = 7V − − 10 A Electrical Characteristics (Cont’d): (TA = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit ON Characteristics (Note 1) DC Current Gain hFE IC = 20mA, VCE = 10V 40 − 160 IC = 2.0mA, VCE = 10V 30 − − IC = 0.2mA, VCE = 10V 10 − − Collector−Emitter Saturation Voltage VCE(sat) IC = 50mA, IB = 4mA − − 0.5 V Base−Emitter Saturation Voltage VBE(sat) IC = 50mA, IB = 4mA − − 1.3 V Dynamic Characteristics Magnitude of Common Emitter Small−Signal Short−Circuit Forward Current Transfer Ratio |hfe| IC = 10mA, VCE = 10V, f = 5MHz 3.0 − 15 Forward Current Transfer Ratio hfe IC = 5mA, VCE = 10V, f = 1kHz 25 − − Output Capacitance Cobo VCB = 10V, IE = 0, 100kHz  f  1MHz − − 10 pF Input Capacitance Cibo VCB = 5V, IC = 0,100kHz  f  1MHz − − 75 pF Note 1. Pulse Test; Pulse Width = 300s, Duty Cycle  2%. .370 (9.39) Dia Max .355 (9.03) Dia Max .260 (6.6) Max .500 (12.7) Min .018 (0.45) Base Emitter Collector/Case 45 .031 (.793)