2N3442

2N3442 Silicon NPN Transistor High Power Industrial TO−3 Type Package Description: The 2N3442 is a silicon NPN power transistor in a TO−3 type package designed for applications in industrial and commercial equipment including high fidelity audio amplifiers, series and shunt regulators and power switches. Features: D Collector−Emitter Sustaining Voltage: VCEO(sus) = 140V Min D Excellent Second Breakdown Capability Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140V Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160V Emitter−Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 117W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.67W/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +200C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +200C Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5C/W Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit 140 − − V OFF Characteristics Collector−Emitter Sustaining Voltage Collector Cutoff Current Emitter Cutoff Current VCEO(sus) IC = 200mA, IB = 0 ICEO VCE = 140V, IB = 0 − − 200 mA ICEX VCE = 140V, VBE(off) = 1.5V − − 5 mA VCE = 140V, VBE(off) = 1.5V, TC = +150C − − 30 mA VBE = 7V, IC = 0 − − 5 mA IEBO Electrical Characteristics (Cont’d): (TC = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max VCE = 4V, IC = 3A 20 − 70 VCE = 4V, IC = 10A 7.5 − − Unit ON Characteristics (Note 1) DC Current Gain hFE Collector−Emitter Saturation Voltage VCE(sat) IC = 10A, IB = 2A − − 5 V Base−Emitter On Voltage VBE(on) VCE = 4V, IC = 10A − − 5.7 V kHz Dynamic Characteristics Current Gain−Bandwidth Product fT VCE = 4V, IC = 2A, ftest = 40kHz, Note 2 80 − − Small−Signal Current Gain hfe VCE = 4V, IC = 2A, ftest = 1kHz 12 − 72 Note 1. Pulse Test: Pulse Width = 300s, Duty Cycle  2%. Note 2. fT = |hfe|  ftest .135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane .312 (7.93) Min Emitter .040 (1.02) 1.187 (30.16) .665 (16.9) .215 (5.45) .156 (3.96) Dia (2 Holes) .430 (10.92) .188 (4.8) R Max Base .525 (13.35) R Max Collector/Case