2N3584

2N3583, 2N3584, 2N3585 Silicon NPN Transistors High Voltage, Medium Power Switch TO66 Type Package Description: The 2N3583, 2N3584, and 2N3585 are silicon transistors in a TO66 type package designed for high− speed switching and linear amplifier applications for high−voltage operational amplifiers, switching regulators, converters, inverters, deflection stages, and high fidelity amplifiers. Features: D TO66 Type Package D Continuous Collector Current: IC = 2A D Power Dissipation: PD = 35W @ TC = +25C D Collector−Emitter Saturation Voltage: VCE(sat) = 0.75V (Max) @ IC = 1A, IB = 125mA Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO 2N3583 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175V 2N3584 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250V 2N3585 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V Collector−Base Voltage, VCB 2N3583 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250V 2N3584 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 375V 2N3585 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V Emitter−Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Collector Current, IC Continuous 2N3583 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A 2N3584, 2N3585 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35W Derate above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.2W/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +200C Storage Junction Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +200C Thermal Resistance, Junction to Case, RJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5C/W Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit 175 − − V 2N3584 250 − − V 2N3585 300 − − V − − 10 mA − − 5 mA VCE = 225V, VBE(off) = 1.5V − − 1 mA VCE = 225V, VBE(off) = 1.5V, TC = +150C − − 3 mA VCE = 340V, VBE(off) = 1.5V − − 1 mA VCE = 300V, VBE(off) = 1.5V, TC = +100C − − 3 mA VCE = 450V, VBE(off) = 1.5V − − 1 mA VCE = 300V, VBE(off) = 1.5V, TC = +100C − − 3 mA VEB = 6V, IC = 0 − − 5 mA − − 0.5 mA IC = 100mA, VCE = 10V 40 − − IC = 500mA, VCE = 10V 40 − 200 IC = 1A, VCE = 10V 10 − − IC = 1A, VCE = 2V 8 − 80 IC = 1A, VCE = 10V 25 − 100 IC = 1A, IB = 125mA − − 5.0 V − − 0.75 V OFF Characteristics Collector−Emitter Sustaining Voltage VCEO(sus) IC = 200mA, IB = 0, Note 1 2N3583 Collector Cutoff Current 2N3583 ICEO VCE = 150V, IB = 0 2N3584, 2N3585 Collector Cutoff Current 2N3583 ICEX 2N3584 2N3585 Emitter Cutoff Current 2N3583 IEBO 2N3584, 2N3585 ON Characteristics (Note 1) DC Current Gain All Devices hFE 2N3583 2N3584, 2N3585 Collector−Emitter Saturation Voltage 2N3583 VCE(sat) 2N3584, 2N3585 Base−Emitter Saturation Voltage 2N3584 & 2N3585 Only VBE(sat) IC = 1A, IB = 100mA − − 1.4 Base−Emitter ON Voltage VBE(on) IC = 1A, VCE = 10V − − 1.4 Note 1. Pulse Test: Pulse Width  300s, Duty Cycle  2%. V V .295 (7.5) .485 (12.3) Dia .062 (1.57) .031 (0.78) Dia .960 (24.3) .360 (9.14) Min Base .580 (14.7) .147 (3.75) Dia (2 Places) .200 (5.08) .145 (3.7) R Max Collector/Case Emitter