2N3702

2N3702 Silicon PNP Transistor Audio Power Amplifier TO−92 Type Package mAbsolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current , IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Collector Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW Derate above +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mW/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83.3C/W Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200C/W Note 1. These ratings are limiting values above which the serviceability of the device may be impaired and are based on maximum temperature of +150C. Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector−Base Breakdown Voltage V(BR)CBO IC = 10mA, IE = 0 40 − − V Collector−Emitter Breakdown Voltage V(BR)CEO IC = 100A,IB = 0 , Note 2 25 − − V Emitter−Base Breakdown Voltage V(BR)EBO IE = 100A, IC = 0 5 − − V Collector Cutoff Current ICBO VCB = 20V, IE = 0 − − 100 nA Emitter Cutoff Current IEBO VEB = 3V, IC = 0 − − 100 nA DC Current Gain hFE VCE = 5V, IC = 50mA, Note 2 60 − 300 − Collector−Emitter Saturation Voltage VCE(sat) IC = 50mA, IB = 5mA, Note 2 − − 0.25 V Base−Emitter On Voltage VBE(on) VCE = 5V, IC = 50mA, Note 2 0.6 − 1 V − − 12 pF 100 − − MHz Output Capacitance Current Gain − Bandwidth Product Cob fT VCB = 10V, f = 1.0 MHz IC = 50 mA, VCE = 5V Note 2. Pulse Test: Pulse Width  300s, Duty Cycle  2%. .135 (3.45) Min .210 (5.33) Max Seating Plane .021 (.445) Dia Max .500 (12.7) Min E C B .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .205 (5.2) Max .105 (2.67) Max