2N3714

2N3714 Silicon NPN Transistor Audio Power Amp, Switch TO−3 Type Package Description: The 2N3714 is a silicon NPN transistor in a TO−3 type package designed for medium speed switching and amplifier applications. Features: D Gain Ranged Specified at 1A and 3A D Low Collector−Emitter Saturation Voltage: VCE9sat) = 0.5V (Typ) @ IC = 5A, IB = 500mA D Excellent Safe Operating Areas Absolute Maximum Ratings: Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Continuous Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 857mW/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +200C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +200C Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.17C/W Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit 80 − − V VCE = 100V, VBE(off) = 1.5V − − 1.0 mA VCE = 100V, VBE(off) = 1.5V, TC = +125C − − 10 mA VBE = 7V, IC = 0 − − 5.0 mA OFF Characteristics Collector−Emitter Sustaining Voltage Collector−Emitter Cutoff Current Emitter Cutoff Current VCEO(sus) IC = 200mA, IB = 0, Not 1 ICEX IEBO Note 1. Pulse test: Pulse Width = 300s, Duty Cycle  2%. Electrical Characteristics (Cont’d): (TC = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit VCE = 2V, IC = 1A 25 − 90 VCE = 2V, IC = 3A 15 − − ON Characteristics (Note 1) DC Current Gain hFE Collector−Emitter Saturation Voltage VCE(sat) IC = 5A, IB = 500mA − − 1.0 V Base−Emitter Saturation Voltage VBE(sat) IC = 5A, IB = 500mA − − 2.0 V Base−Emitter ON Voltage VBE(on) IC = 3A, VCE = 2V − − 1.5 V 4.0 − − MHz Dynamic Characteristics Current−Gain Bandwidth Product fT VCE = 10V, IC = 500mA, f = 1MHz, Note 2 Note 1. Pulse test: Pulse Width = 300s, Duty Cycle  2%. Note 2. fT = |hfe|  ftest .135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane .312 (7.93) Min Emitter .215 (5.45) .040 (1.02) 1.187 (30.16) .665 (16.9) .156 (3.96) Dia (2 Holes) .430 (10.92) .188 (4.8) R Max Base .525 (13.35) R Max Collector/Case