2N3819

2N3819 N−Channel RF Amplifier TO−92 Type Package Description: The 2N3819 is a N−Channel RF Amplifier transistor designed for RF amplifier and mixer applications operating up to 450Mhz, and for analog switching requiring low capacitance. Absolute Maximum Ratings: (TC = +25C, Note 1 unless otherwise specified) Drain−Gate Voltage, VDG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V Gate−Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −25V Drain Current, ID . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Forward Gate Current, IGF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA Total Device Dissipation (TA = +25C ), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350mW Derate Above +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.8mW/C Storage Temperature Range, TSTG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to 150C Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125C/W Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35C/W Note 1. These ratings are limiting values above which the serviceability of the device may be impaired and are based on maximum temperature of +150C. Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics Gate−Source Breakdown Voltage Gate Reverse Current Gate−Source Cutoff Voltage Gate−Source Voltage V(BR)GSS IG = −1.0A, VDS = 0 25 − − V IGSS VGS = −15V, VDS = 0 − − 2.0 nA VGS(off) VDS = 15V, ID = 2.0nA − − 8.0 V VDS VDS = 15V, ID = 200 −0.5 − 7.5 V IDSS VDS = 15V, ID = 0 2.0 − 20 mA ON Characteristics Zero−Gate Voltage Drain Current Electrical Characteristics (Cont’d): (TA = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit 1600 − − mhos Small−Signal Characteristics Forward Transfer Admittance yfs VDS = 15V, VGS = 0, f = 1kHz Output Admittance yos VDS = 15V, VGS = 0, f = 1.0KHz − − 50 mhos goss VDS = 15V, VGS = 0, f = 1.0KHz − − 50 mhos Forward Transfer Conductance gfs VDS = 15V, VGS = 0, f = 1.0KHz 2000 − 6500 mhos Input Capacitance Ciss VDS = 15V, VGS = 0, f = 1.0KHz − − 8.0 pF Reverse Transfer Capacitance Crss VDS = 15V, VGS = 0, f = 1.0MHz − − 4.0 pF Output Conductance .135 (3.45) Min .210 (5.33) Max Seating Plane .021 (.445) Dia Max .500 (12.7) Min D G S .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .205 (5.2) Max .105 (2.67) Max