2N4033

2N4033 Silicon PNP Transistor Small Signal General Purpose Amplifier TO−39 Type Package Description: The 2N4033 is a silicon transistor in a TO−39 type package designed primarily for amplifier and switching applications. This device features high breakdown voltages, low leakage currents, low capacity, and a beta useful over an extremely wide current range. Absolute Maximum Ratings: (Note 1) Collector−Emitter Voltage (Note 2), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Power Dissipation (TA = +25C, Note 3), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800 mW Derate above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.56mw/C Power Dissipation (TC = +25C, Note 3), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4W Derate above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22.8mw/C Operating Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +200C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +200C Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 219C/W Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43.7C/W Note 1. These ratings are limiting values above which the serviceability of any device may be impaired. Note 2. Rating refers to a high current point where Collector−Emitter voltage is lowest. Note 3. These are steady state limits and give a maximum junction temperature of +200C. Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector Base Breakdown Voltage BVCBO IC = 10, IE = 0 80 − − V Emitter Base Breakdown Voltage BVEBO IE = 10, IC = 0 5 − − V Emitter Cutoff Current IEBO VEB = 5V, IC = 0 − − 10 A Collector Cutoff Current ICBO VCB = 60V, IE = 0 − − 50 nA VCB = 60V, TA = 150C − − 50 A IC = 100A, VCE = 5V 75 − − IC = 100A, VCE = 5V, Note 4 100 − 300 IC = 500mA, VCE = 5V, Note 4 70 − − IC = 1A, VCE = 5V, Note 4 25 − − IC = 100mA, VCE = 5V, TA = −55C, Note 4 40 − − DC Current Gain hFE Note 4. Pulse Test; Pulse Width  300s, Duty Cycle = 1% Electrical Characteristics (Cont’d): (TA = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector Emitter Sustaining Voltage VCEO IC = 10mA (pulsed), IB = 0, Note 4 80 − − V Collector Emitter Saturation Voltage VCE(sat) IC = 150mA, IB = 15mA, Note 4 − − −0.15 V IC = 500mA, IB = 50mA, Note 4 − − −0.5 V IC = 1A, IB = 100mA, Note 4 − − −1.0 V Base Emitter ON Voltage VBE(ON) IC = 500mA, VBE = −0.5V, Note 4 − − −1.1 V Base Emitter Saturation Voltage VBE(sat) IC = 150mA, IB = 15mA, Note 4 − − −0.9 V Collector to Base Capacitance Ccb VCB = −10V, IE = 0, f = 1MHz − − 20 pF Input Capacitance Cib VBE = −0.5V, IC = 0, f = 1MHz − − 110 pF Magnitude of Common Emitter Small Signal Current Gain |hfe| IC = 50mA, VCE = −10V, f = 100MHz 1.5 − 5.0 − − 350 ns − − 50 ns − − 100 ns Storage Time ts Fall Time tf Turn On Time ton IC [ 500mA, IB1 [ IB2 [ 50mA IC [ 500mA, IB1 [ 50mA Note 4. Pulse Test; Pulse Width  300s, Duty Cycle = 1% Note 1. Pulse Test; Pulse Width 300s, Duty Cycle 2% .370 (9.39) Dia Max .355 (9.03) Dia Max .260 (6.6) Max .500 (12.7) Min .018 (0.45) Base Emitter Collector/Case 45 .031 (.793)