2N404A

2N404A Germanium PNP Transistor Medium Speed Switch TO5 Type Package Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40V Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −25V Collector−Emitter Voltage (Note 1), VCE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −35V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mA Total Device Dissipation, PD TA = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mW TA = +55C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90mW TA = +71C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60mW Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +100C Note 1. Reach through voltage. Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector−Base Breakdown Voltage V(BR)CBO IC = −20A −40 − − V Emitter−Base Breakdown Voltage V(BR)EBO IE = −20A −25 − − V −35 − − V − − −5 A − − −90 A VEB = 2.5V − − −2.5 A IB = 0.4mA, IC = −12mA − − −0.15 V IB = 1mA, IC = 24mA − − −0.2 V IB = 0.4mA, IC = −12mA − − −0.35 V IB = 1mA, IC = 24mA − − −0.4 V Reach Through Voltage VRT Collector Cutoff Current ICBO VCB = −12V TA = +80C Emitter Cutoff Current Collector−Emitter Saturation Voltage Base Input Voltage IEBO VCE(sat) VBE Electrical Characteristics (Cont’d): (TA = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit 4 − − mcs High Frequency Characteristics Alpha Cutoff Frequency fhfb Collector Capacitance Cob f = 2mcs − − 20 pF Stored Base Charge QSB IB = 1mA, IC = −10mA − − 1400 pcb Base Spreading Resistance r’b − 100 −  Input Resistance hie − 2700 −  Noise Figure NF − 3.5 − dB 1kc, 1 cycle wide Low Frequency Characteristics (Common Emitter) Output Admittance hoe − 400 − mhos Voltage Feedback Ratio hre − 8.4 − x10−4 Forward Current Transfer Ratio hfe − 86 − Input Impedance hie − 450 − .352 (8.95) Dia Max .320 (98.13) Dia Max .250 (6.35) Max 1.500 (38.1) Min .019 (0.5) Dia Base Emitter Collector 45 .031 (.793) 