2N4987

2N4987 Silicon Unilateral Switch (SUS) TO−98 Type Package Description: The 2N4987 is a planar monolithic silicon integrated circuit having thyristor electrical characteristics closely approximating those of an “ideal” four layer diode. The device is designed to switch at 8V with a 0.02%/C temperature coefficient. A gate lead is provided to eliminate rat effect, obtain triggering information at lower voltages and to obtain transient free wave forms. Silicon Unilateral Switches are specifically designed and characterized for use in monostable and bistable applications where low cost is of prime importance. Applications: D SCR Triggers D Frequency Dividers D Ring Counters D Cross Point Switching D Over−Voltage Sensors Absolute Maximum Ratings: Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Peak Recurrent Forward Current (1% duty cycle, 10s pulse width, TA = +100C) . . . . . . . . . . . 1A Peak Non−Recurrent Forward Current (10s pulse width) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A DC Forward Anode Current (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175mA DC Gate Current (Note 1, Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mA Power Dissipation (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW Operating Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +125C Storage Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +150C Note 1. Derate linearly to zero at +125C Note 2. This rating applicable only in OFF state. Maximum gate current in conducting state limited by maximum power rating. Electrical Characteristics: (TA = +25C, unless otherwise specified) Parameter Symbol Forward Voltage Drop (On−State) VF Forward Switching Voltage VS Forward Current (Off−State) IB Test Conditions Min Typ Max Unit − − 1.5 V 6 − 10 V VF = 5V, TA = +25C − − 0.1 A VF = 5V, TA = +100C − − 10 A IF = 175mA Electrical Characteristics (Cont’d): (TA = +25C, unless otherwise specified) Parameter Symbol Forward Switching Current IS Reverse Current IR Test Conditions Min Typ Max Unit − − 500 A VR = −30V, TA = +25C − − 0.1 A VR = −30V, TA = +100C − − 10 A − − 1.55 mA − 0.02 − %/C Holding Current IH Temperature Coefficient of Switching Voltage TC Turn−On Time ton − − 1.0 s Turn−Off Time toff − − 25 s Peak Pulse Voltage VO 3.5 − − V Capacitance C − 2.5 − pF TA = −55 to +100C 0V, f = 1MHz .140 (3.55) Max .190 (4.82) Min .265 (6.74) Max .500 (12.7) Min A G K .100 (2.54) .200 (5.08) Max