2N5301

2N5301 & 2N5303 Silicon NPN Transistor High Power Audio Amplifier TO−3 Type Package Description: The 2N5301 and 2N5303 are silicon NPN transistors in a TO−3 type case designed for use in power amplifier and switching circuits applications.. Features: D High Collector−Emitter Sustaining Voltage: VCEO(sus) = 40V (Min) @ IC = 200mA (2N5301) VCEO(sus) = 80V (Min) @ IC = 200mA (2N5303) D Low Collector−Emitter Saturation Voltage: VCE(sat) = 0.75V (Max) @ IC = 10A (2N5301) VCE(sat) = 1.0V (Max) @ IC = 10A (2N5303) D Excellent Safe Operating Area: 200W Power Rating to 30V (2N5303) Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO 2N5301 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V 2N5303 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector−Base Voltage, VCB 2N5301 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V 2N5303 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Continuous Collector Current, IC 2N5301 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A 2N5303 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.5A Total Device Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.14W/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +200C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +200C Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.875C/W Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34C/W Electrical Characteristics: (TC =+25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics Collector−Emitter Sustaining Voltage 2N5301 VCEO(sus) IC = 200mA, IB = 0, Note 1 40 − − V 80 − − V − − 5 mA − − 5 mA − − 1 mA − − 1 mA − − 10 mA − − 10 mA − − 1 mA VCB = 80V − − 1 mA IEBO VBE = 5V, IC = 0 − − 1.0 mA hFE IC = 1A 40 − − 2N5303 Collector Cutoff Current 2N5301 ICEO 2N5303 2N5301 VCE = 40V IB = 0 VCE = 80V ICEX VCE = 40V VEB(off) = 1.5V 2N5303 VCE = 80V 2N5301 VCE = 40V 2N5303 VCE = 80V VEB(off) = 1.5V, TC = +150C VCB = 40V IE = 0 2N5301 ICBO 2N5303 Emitter−Base Cutoff Current ON Characteristics (Note 1) DC Current Gain All Types VCE = 2V 2N5303 IC = 10A 15 − 60 2N5301 IC = 15A 15 − 60 2N5303 IC = 20A 5 − − 2N5301 IC = 30A 5 − − IC = 10A, IB = 1A − − 0.75 V − − 1.0 V Collector−Emitter Saturation Voltage 2N5301 VCE(sat) VCE = 4V 2N5303 2N5303 IC = 15A, IB = 1.5A − − 1.5 V 2N5301 IC = 20A IB = 2A − − 2.0 V IB = 4A − − 2.0 V IC = 30A, IB = 6A − − 3.0 V IC = 10A, IB = 1A − − 1.7 V IC = 15A, IB = 1.5A − − 1.8 V − − 2.0 V IB = 2A − − 2.5 V IB = 4A − − 2.5 V VCE = 2V − − 1.5 V − − 1.7 V − − 2.5 V − − 3.0 V 2N5303 2N5301 Base−Emitter Saturation Voltage All Types VBE(sat) 2N5301 2N5303 2N5301 IC = 20A 2N5303 Base−Emitter ON Voltage 2N5303 VBE(on) IC = 10A 2N5301 IC = 15A 2N5303 IC = 20A 2N5301 IC = 30A VCE = 4V Note 1. Pulse Test: Pulse Width  300s. Duty Cycle  2%. Electrical Characteristics (Cont’d): (TC =+25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Dynamic Characteristics Current Gain−Bandwidth Product fT IC = 1A, VCE = 10V, f = 1MHz 2.0 − − MHz Small−Signal Current Gain hfe IC = 1A, VCE = 10V, f = 1kHz 40 − − VCC = 30V, IC = 10A, IB1 = IB2 = 1A − − 1 s − − 2 s − − 1 s Switching Characteristics Rise Time tr Storage Time ts Fall Time tf .135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane .312 (7.93) Min Emitter .040 (1.02) 1.187 (30.16) .665 (16.9) .215 (5.45) .156 (3.96) Dia (2 Holes) .430 (10.92) .188 (4.8) R Max Base .525 (13.35) R Max Collector/Case