2N5366

2N5366 Silicon PNP Transistor Audio Power Amplifier TO−92 Type Package Absolute Maximum Ratings: (TC = +25C unless otherwise specified) Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V Continuous Collector Current , IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Total Device Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW Derate Above +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mW/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200C/W Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector−Base Breakdown Voltage V(BR)CBO IC = 10A 40 − − V Collector−Emitter Breakdown Voltage V(BR)CEO IC = 10mA 40 − − V Emitter−Base Breakdown Voltage V(BR)EBO IC = 10A 4 − − V Collector Cutoff Current ICBO VCB = 40V − − 100 nA ICES VCB = 40V − − 100 nA Emitter Cutoff Current IEBO VEB = 4V − − 10 A DC Current Gain hFE VCE = 10V, IC = 2mA 80 − − VCE = 1V, IC = 50mA 100 − 300 VCE = 5V, IC = 300mA 40 − − IC = 50mA, IB = 2.5mA − − 0.25 V IC = 300mA, IB = 30mA − − 1 V IC = 50mA, IB = 2.5mA − − 1.1 V IC = 300mA, IB = 30mA − − 2.0 V Collector−Emitter Saturation Voltage Base−Emitter Saturation Voltage Base−Emitter ON Voltage VCE(sat) VBE(sat) VBE(on) VCE = 10V, IC = 2mA 0.5 − 0.8 V Output Capacitance Cob VCB = 10V, f = 1MHz − − 8 pF Input Capacitance Cib VCB = 500mV, f = 1MHz − − 35 pF Small−Signal Current−Gain hfe VCE = 10V, IC = 2mA, f = 1MHz 80 450 − .135 (3.45) Min .210 (5.33) Max Seating Plane .021 (.445) Dia Max .500 (12.7) Min E C B .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .205 (5.2) Max .105 (2.67) Max