2N5401

2N5400 & 2N5401 Silicon PNP Transistor General Purpose Amplifier TO92 Type Package Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO 2N5400 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V 2N5401 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150V Collector−Base Voltage, VCBO 2N5400 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130V 2N5401 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160V Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mA Total Device Dissipation (TA = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0mW/C Total Device Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.0mW/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C Thermal Resistance, Junction to Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83.3C/W Thermal Resistance, Junction to Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200C/W Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit 120 − − V 150 − − V 130 − − V 160 − − V 5 − − V VCB = 100V, IE = 0 − − 100 nA 2N5401 VCB = 120V, IE = 0 − − 50 nA 2N5400 VCB = 100V, IE = 0, TA = +100C − − 100 nA 2N5401 VCB = 120V, IE = 0, TA = +100C − − 50 nA VEB = 3V, IC = 0 − − 50 nA OFF Characteristics Collector−Emitter Breakdown Voltage 2N5400 V(BR)CEO IC = 1mA, IB = 0, Note 1 2N5401 Collector−Base Breakdown Voltage 2N5400 V(BR)CBO IC = 100A, IE = 0 2N5401 Emitter−Base Breakdown Voltage Collector Cutoff Current 2N5400 Emitter Cutoff Current V(BR)EBO IE = 10A, IC = 0 ICBO IEBO Note 1. Pulse Test: Pulse Width = 300s, Duty Cycle = 2%. Rev. 7−19 Electrical Characteristics (Cont’d): (TA = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit 30 − − 50 − − 40 − 180 60 − 240 40 − − 50 − − IC = 10mA, IB = 1mA − − 0.2 V IC = 50mA, IB = 5mA − − 0.5 V IC = 10mA, IB = 1mA − − 1.0 V IC = 50mA, IB = 5mA − − 1.0 V 100 − 400 MHz 100 − 300 MHz VCB = 10V, IE = 0, f = 1MHz − − 6.0 pF IC = 1mA, VCE = 10V, f = 1kHz 30 ON Characteristics (Note 1) DC Current Gain 2N5400 hFE VCE = 5V, IC = 1mA 2N5401 2N5400 VCE = 5V, IC = 10mA 2N5401 2N5400 VCE = 5V, IC = 50mA 2N5401 Collector−Emitter Saturation Voltage Base−Emitter Saturation Voltage VCE(sat) VBE(sat) Small−Signal Characteristics Current Gain−Bandwidth Product 2N5400 fT IC = 10mA, VCE = 10V, f = 100MHz 2N5401 Output Capacitance Small−Signal Current Gain 2N5400 Cobo hfe 2N5401 Noise Figure NF IC = 250A, VCE = 5V, RS = 1k, f = 10Hz to 15.7kHz Note 1. Pulse Test: Pulse Width  300s, Duty Cycle  2%. − 200 40 − 200 − − 8.0 db .135 (3.45) Min .210 (5.33) Max Seating Plane .021 (.445) Dia Max .500 (12.7) Min E B C .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .105 (2.67) Max .205 (5.2) Max