2N5430

2N5430 Silicon NPN Transistor Medium Power TO−66 Type Package Description: The 2N5430 is a silicon NPN transistor in a TO−66 type package designed for switching and wide− band amplifier applications Absolute Maximum Ratings: Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Total Device Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40W Derate above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 228 mW/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +200C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +200C Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.37C/W Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit 100 − − V VCE = 90V, VEB(off) = 1.5V − − 0.1 mA VCE = 90V, VEB(off) = 1.5V, TC = 150C − − 1.0 mA ICBO VCB = Rated VCB, IE = 0 − − 0.1 mA IEBO VBE = 6V, IC = 0 − − 0.1 mA hFE IC = 500mA, VCE = 2V 60 − − − IC = 2A, VCE = 2V 60 − 240 − IC = 5A, VCE = 2V 40 − − − IC = 2A, IB = 0.2A − − 0.7 V IC = 7A, IB = 0.7A − − 1.2 V IC = 2A, IB = 0.2A − − 1.2 V IC = 7A, IB = 0.7A − − 2.0 V OFF Characteristics Collector Emitter Sustaining Voltage Collector Cutoff Current Emitter Cutoff Current VCEO (sus) IC = 50mA, IB = 0, Note 1 ICEX ON Characteristics (Note 1) DC Current Gain Collector−Emitter Saturation Voltage Base−Emitter Saturation Voltage VCE(sat) VBE(sat) Note 1. Pulse Test: Pulse Width = 300s, Duty Cycle = 2.0% Electrical Characteristics (Cont’d): (TC = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit 20 − − MHz Dynamic Characteristics Current Gain Bandwidth Product fT IC = 500mA, VCE = 10V, f = 10MHz, Note 2 Note 2 fT = |hfe| = ftest. .295 (7.5) .485 (12.3) Dia .062 (1.57) .031 (0.78) Dia .960 (24.3) .360 (9.14) Min Base .580 (14.7) .147 (3.75) Dia (2 Places) .200 (5.08) .145 (3.7) R Max Collector/Case Emitter