2N5884

2N5884 (PNP) & 2N5886 (NPN) Silicon Power Transistor High Power Audio Amplifier TO−3 Type Package Description: The 2N5884 (PNP) and 2N5886 (NPN) are silicon complementary transistors designed for use in general purpose power amplifier and switching applications. Features: D Low Collector−Emitter Saturation Voltage: VCE(sat) = 1V (Max) at IC = 15A D Excellent DC Current Gain: hFE = 20 − 100 @ IC = 10A Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.5A Total Device Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.15W/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +200C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +200C Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.875C/W Electrical Characteristics: (TC =+25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit 80 − − V OFF Characteristics Collector−Emitter Sustaining Voltage Collector Cutoff Current Emitter Cutoff Current VCEO(sus) IC = 200mA, IB = 0, Note 1 ICEO VCE = 40V, IB = 0 − − 2.0 mA ICBO VCB = 80V, IE = 0 − − 1.0 mA ICBX VCE = 100V, VBE(off) = 1.5V − − 1.0 mA VCE = 100V, VBE(off) = 1.5V, TC = +150C − − 10 mA VEB = 5V, IC = 0 − − 1.0 mA IEBO Note 1. Pulse Test: Pulse Width  300s. Duty Cycle  2%. Electrical Characteristics (Cont’d): (TC =+25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit IC = 3A, VCE = 4V 35 − − IC = 10A, VCE = 4V 20 − 100 IC = 25A, VCE = 4V 4.0 − − IC = 15A, IB = 1.5A − − 1.0 V IC = 25A, IB = 6.25A − − 4.0 V ON Characteristics (Note 1) DC Current Gain hFE Collector−Emitter Saturation Voltage VCE(sat) Base−Emitter ON Voltage VBE(on) IC = 10A, VCE = 4V − − 1.5 V Base−Emitter Saturation Voltage VBE(sat) IC = 25A, IB = 6.25A − − 2.5 V MHz Dynamic Characteristics Current Gain−Bandwidth Product fT IC = 1A, VCE = 10V, f = 1MHz, Note 2 4.0 − − Small−Signal Current Gain hfe IC = 3A, VCE = 4V, f = 1kHz 20 − − Note 1. Pulse Test: Pulse Width  300s. Duty Cycle  2%. Note 2. fT = |hfe| S ftest. .135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane .312 (7.93) Min Emitter .040 (1.02) 1.187 (30.16) .665 (16.9) .215 (5.45) .156 (3.96) Dia (2 Holes) .430 (10.92) .188 (4.8) R Max Base .525 (13.35) R Max Collector/Case