2N6052

2N6052 Silicon PNP Transistors Darlington Power Amplifier TO−3 Type Package Description: The 2N6052 is a silicon PNP Darlington transistor in a TO−3 type case designed for general−purpose amplifier and low−frequency switching applications. Features: D High DC Current Gain: hFE = 3500 Typ @ IC = 5A D Collector−Emitter Sustaining Voltage: VCEO(sus) = 100V Min @ 100mA D Monolithic Construction with Built−In Base−Emitter Shunt Resistors Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector−Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Emitter−Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.857W/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +200C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +200C Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.17C/W Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit 100 − − V OFF Characteristics Collector−Emitter SustainingVoltage Collector Cutoff Current Emitter Cutoff Current VCEO(sus) IC = 100mA, IB = 0, Note 1 ICEO VCE = 50V, IE = 0 − − 1.0 mA ICEX VCE = 100V, VBE(off) = 1.5V − − 0.5 mA VCE = 100V, VBE(off) = 1.5V, TA = +150C − − 5.0 mA VBE = 5V, IC = 0 − − 2.0 mA IEBO Note 1. Pulse Test: Pulse Width = 300s, Duty Cycle = 2% Electrical Characteristics (Cont’d): (TA = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit VCE = 3V, IC = 6A 750 − 18000 VCE = 3V, IC = 12A 100 − − IC = 6A, IB = 24mA − − 2.0 V IC = 12A, IB = 120mA − − 3.0 V ON Characteristics (Note 1) DC Current Gain hFE Collector−Emitter Saturation Voltage VCE(sat) Base−Emitter Saturation Voltage VBE(sat) IC = 12A, IB = 120mA − − 4.0 V Base−Emitter ON Voltage VBE(on) VCE = 3V, IC = 6A − − 2.8 V Dynamic Characteristics Small−Signal Current Gain hfe VCE = 3V, IC = 5A, f = 1kHz 300 − − Magnitude of Common Emitter Small−Signal Short−Circuit Forward Current Transfer Ratio |hfe| VCE = 3V, IC = 5A, f = 1MHz 4.0 − − MHz Output Capacitance Cob VCB = 10V, IE = 0, f = 0.1MHz − − 500 pF Note 1. Pulse Test: Pulse Width = 300s, Duty Cycle = 2% 2N6052 C B E .135 (3.45) Max .875 (22.2) Dia Max .350 (8.89) Seating Plane .312 (7.93) Min .040 (1.02) 1.187 (30.16) Emitter .665 (16.9) .215 (5.45) .430 (10.92) .188 (4.8) R Max Base .525 (13.35) R Max Collector/Case