2N6109

2N6109 Silicon PNP Transistor Audio Power Output and Medium Power Switching TO−220 Type Package Description: The 2N6109 is a silicon PNP transistor in a TO−220 type package designed for use in general purpose amplifier and switching applications. Features: D DC Current Gain Specified to 7 Amps: hFE = 2.3 Min @ IC = 7A D Collector−Emitter Sustaining Voltage: VCEO(sus) = 50V Min D High Current−Gain Bandwidth Product: fT = 10MHz Min @ IC = 500mA Absolute Maximum Ratings: (Note 1) Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V Collector−Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Emitter−Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.32W/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +150C Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.125C/W Note 1. Stresses exceeding Maximum Ratings may damage the device. maximum ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics Collector−Emitter Sustaining Voltage VCEO(sus) IC = 100mA, IB = 0, Note 2 50 − − V Collector Cutoff Current Emitter Cutoff Current ICEO VCE = 40V, IB = 0 − − 1.0 mA ICEX VCE = 60V, VEB(off) = 1.5V − − 100 A VCE = 50V, VEB(off) = 1.5V, TC = +150C − − 2.0 mA VBE = 5V, IC = 0 − − 1.0 mA IEBO Note 2. Pulse Test: Pulse Width  300s, Duty Cycle  2%. Electrical Characteristics (Cont’d): (TC = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit ON Characteristics (Note 2) DC Current Gain hFE IC = 2.5A, VCE = 4V 30 − 150 IC = 7A, VCE = 4V 2.3 − − Collector−Emitter Saturation Voltage VCE(sat) IC = 7A, IB = 3A − − 3.5 V Base−Emitter ON Voltage VBE(on) IC = 7A, VCE = 4V − − 3.0 V IC = 500mA, VCE = 4V, ftest = 1MHz, Note 3 10 − − MHz pF Dynamic Characteristics Current−Gain Bandwidth Product fT Output Capacitance Cob VCB = 10V, IE = 0, f = 1MHz − − 250 Small−Signal Current Gain hfe IC = 500mA, VCE = 4V, f = 50kHz 20 − − Note 2. Pulse Test: Pulse Width  300s, Duty Cycle  2%. Note 3. fT = |hfe|  ftest .420 (10.67) Max .110 (2.79) .147 (3.75) Dia Max .500 (12.7) Max .250 (6.35) Max .070 (1.78) Max Base .100 (2.54) .500 (12.7) Min Emitter Collector/Tab