2N6125

2N6125 Silicon PNP Transistor Power Amp Driver, Output, Switch TO−220 Type Package Description: The 2N6125 is a silicon PNP transistor in a TO−220 type package designed for use in power amplifier and switching circuit applications. Features: D Collector−Emitter Sustaining Voltage: VCEO(sus) = 60V Min D Collector−Emitter Saturation Voltage: VCE(sat) = 600mV Max @ IC = 1.5A, IB = 150mA Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 320mWC Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +150C Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.125C/W Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit 60 − − V OFF Characteristics Collector−Emitter Sustaining Voltage Collector Cutoff Current Emitter Cutoff Current VCEO(sus) IC = 100mA, IB = 0, Note 1 ICEO VCE = 60V, IB = 0 − − 1.0 mA ICEX VCE = 60V, VBE(off) = 1.5V − − 0.1 mA VCE = 60V, VBE(off) = 1.5V, TJ = +125C − − 2.0 mA VEB = 5V, IC = 0 − − 1.0 mA IEBO Note 1. Pulse Test: Pulse Width = 300s, Duty Cycle  2%. Electrical Characteristics (Cont’d): (TC = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit VCE = 2V, IC = 1.5A 20 − 80 VCE = 2V, IC = 4A 10 − − IC = 1.5A, IB = 150mA − − 0.6 V IC = 4A, IB = 1A − − 1.4 V IC = 1.5A, VCE = 2V − − 1.2 V MHz ON Characteristics (Note 1) DC Current Gain hFE Collector−Emitter Saturation Voltage VCE(sat) Base−Emitter ON Voltage VBE(on) Dynamic Characteristics Current−Gain−Bandwidth Product fT IC = 1A, VCE = 4V, f = 1MHz, Note 2 2.5 − − Small−Signal Current Gain hfe IC = 100mA, VCE = 2V, f = 1kHz 25 − − Note 1. Pulse Test: Pulse Width = 300s, Duty Cycle  2%. Note 2. fT = |hfe|  ftest .420 (10.67) Max .110 (2.79) .147 (3.75) Dia Max .500 (12.7) Max .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max Base .100 (2.54) Emitter Collector/Tab