2N6125
Silicon PNP Transistor
Power Amp Driver, Output, Switch
TO−220 Type Package
Description:
The 2N6125 is a silicon PNP transistor in a TO−220 type package designed for use in power amplifier
and switching circuit applications.
Features:
D Collector−Emitter Sustaining Voltage: VCEO(sus) = 60V Min
D Collector−Emitter Saturation Voltage: VCE(sat) = 600mV Max @ IC = 1.5A, IB = 150mA
Absolute Maximum Ratings:
Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40W
Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 320mWC
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +150C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +150C
Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.125C/W
Electrical Characteristics: (TC = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
60
−
−
V
OFF Characteristics
Collector−Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
VCEO(sus) IC = 100mA, IB = 0, Note 1
ICEO
VCE = 60V, IB = 0
−
−
1.0
mA
ICEX
VCE = 60V, VBE(off) = 1.5V
−
−
0.1
mA
VCE = 60V, VBE(off) = 1.5V, TJ = +125C
−
−
2.0
mA
VEB = 5V, IC = 0
−
−
1.0
mA
IEBO
Note 1. Pulse Test: Pulse Width = 300s, Duty Cycle 2%.
Electrical Characteristics (Cont’d): (TC = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
VCE = 2V, IC = 1.5A
20
−
80
VCE = 2V, IC = 4A
10
−
−
IC = 1.5A, IB = 150mA
−
−
0.6
V
IC = 4A, IB = 1A
−
−
1.4
V
IC = 1.5A, VCE = 2V
−
−
1.2
V
MHz
ON Characteristics (Note 1)
DC Current Gain
hFE
Collector−Emitter Saturation Voltage
VCE(sat)
Base−Emitter ON Voltage
VBE(on)
Dynamic Characteristics
Current−Gain−Bandwidth Product
fT
IC = 1A, VCE = 4V, f = 1MHz, Note 2
2.5
−
−
Small−Signal Current Gain
hfe
IC = 100mA, VCE = 2V, f = 1kHz
25
−
−
Note 1. Pulse Test: Pulse Width = 300s, Duty Cycle 2%.
Note 2. fT = |hfe| ftest
.420 (10.67)
Max
.110 (2.79)
.147 (3.75)
Dia Max
.500
(12.7)
Max
.250
(6.35)
Max .500
(12.7)
Min
.070 (1.78) Max
Base
.100 (2.54)
Emitter
Collector/Tab
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