2N6259

2N6259 Silicon NPN Transistor General Purpose, High Power Audio, Disk Head Positioner for Linear Applications Description: The 2N6259 is a silicon NPN power transistor in a TO3 type package designed for high power audio, disk head positioners, and other linear applications. Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO(sus) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150V Collector−Emitter Voltage, VCEX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 170V Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 170V Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A Base Current, IB Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.857 W/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +200C Storage Temperature Range, TSTG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +200C Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.17C/W Note 1. Pulse Test: Pulse Width = 300s, Duty Cycle  2.0%. Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit 150 − − V OFF Characteristics Collector−Emitter Sustaining Voltage VCEO(sus) IC = 100mA, IB = 0, Note 1 Collector Cutoff Current Emitter Cutoff Current ICEX VCE = 150V, VBE(off) = 1.5V − − 2.0 mA ICEO VCE = 130V, IB = 0 − − 10 mA ICBO VCB = 150V, IE = 0 − − 2.0 mA IEBO VEB = 7V, IC = 0 − − 5.0 mA hFE VCE = 2V, IC = 8A 15 − 60 − VCE = 4V, IC = 16A 10 − − − IC = 8A, IB = 800mA − − 1.0 V IC = 16A, IB = 3.2A − − 2.5 V VCE = 2V, IC = 8A − − 2.0 V ON Characteristics (Note 1) DC Current Gain Collector−Emitter Saturation Voltage Base−Emitter On Voltage VCE(sat) VBE(on) Note 1. Pulse Test: Pulse Width = 300s, Duty Cycle  2.0%. .135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane .312 (7.93) Min Emitter .215 (5.45) .040 (1.02) 1.187 (30.16) .665 (16.9) .156 (3.96) Dia (2 Holes) .430 (10.92) .188 (4.8) R Max Base .525 (13.35) R Max Collector/Case