2N6294

2N6294 Silicon NPN Transistor Darlington Power Amplifier, Switch TO−66 Type Package Description: The 2N6294 silicon NPN Darlington transistor is a TO−66 type case designed for general purpose amplifier, low−frequency switching and hammer driver applications. Features: D High DC Current Gain: hFE = 3000 Typ @ IC = 2A D Low Collector−Emitter Saturation Voltage: VCE(sat) = 2V Max @ IC = 2A D Collector−Emitter Sustaining Voltage: VCEO(sus) = 60V Min D Monolithic Construction with Built−In Base−Emitter Shunt Resistors Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Collector−Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Emitter−Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80mA Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.286W/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +200C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +200C Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.5C/W Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit 60 − − V OFF Characteristics Collector−Emitter Sustaining Voltage Collector Cutoff Current Emitter Cutoff Current VCEO(sus) IC = 50mA, IB = 0 ICEO VCE = 30V, IB = 0 − − 0.5 mA ICEX VCE = 60V, VEB(off) = 1.5V − − 0.5 mA VCE = 60V, VEB(off) = 1.5V, TA = +150C − − 5.0 mA VBE = 5V, IC = 0 − − 2.0 mA IEBO Electrical Characteristics (Cont’d): (TC = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit VCE = 3V, IC = 2A 750 − 18000 VCE = 3V, IC = 4A 100 − − IC = 2A, IB = 8mA − − 2.0 V IC = 4A, IB = 40mA − − 3.0 V ON Characteristics DC Current Gain hFE Collector−Emitter Saturation Voltage VCE(sat) Base−Emitter Saturation Voltage VBE(sat) IC = 4A, IB = 40mA − − 4.0 V Base−Emitter ON Voltage VBE(on) VCE = 3V, IC = 2A − − 2.8 V 4.0 − − Dynamic Characteristics Magnitude of Common Emitter Small−Signal Short−Circuit Forward Current Transfer Ratio |hfe| IC = 1.5A, VCE = 3V, f = 1MHz Output Capacitance Cob VCB = 10V, IE = 0, f = 0.1MHz Small−Signal Current Gain hfe IC = 1.5A, VCE = 3V, f = 1kHz 120 300 C B E .485 (12.3) Dia .295 (7.5) .062 (1.57) .031 (0.78) Dia .960 (24.3) .360 (9.14) Min Base .580 (14.7) .147 (3.75) Dia (2 Places) .200 (5.08) .145 (3.7) R Max Collector/Case Emitter − − pF