2N6338

2N6338 Silicon NPN Transistor Power Amp, Switch TO−3 Type Package Description: The 2N6338 is a silicon NPN transistor in a TO−3 type package designed for use in industrial−military power amplifier and switching circuit applications. Features: D High Collector−Emitter Sustaining Voltage D High DC Current Gain D Low Collector−Emitter Saturation Voltage D Fast Switching Times Absolute Maximum Ratings: (Note 1) Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector−Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V Emitter−Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Total Device Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.14W/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +200C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +200C Maximum Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . 0.875C/W Note 1. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit 100 − − V VCE = 100V, VEB(off) = 1.5V − − 10 A VCE = 100V, VEB(off) = 1.5V, TC = +150C − − 1.0 mA ICEO VCE = 50V, IB = 0 − − 50 A ICBO VCB = 100V, IE = 0 − − 10 A IEBO VBE = 6V, IC = 0 − − 100 A OFF Characteristics Collector−Emitter Sustaining Voltage Collector Cutoff Current Emitter Cutoff Current VCEO(sus) IC = 50mA, IB = 0, Note 2 ICEX Note 2. Pulse Test: Pulse Width  300s, Duty Cycle  2%. Electrical Characteristics (Cont’d): (TC = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit VCE = 2V, IC = 0.5A 50 − − VCE = 2V, IC = 10A 30 − 120 VCE = 2V, IC = 25A 12 − − IC = 10A, IB = 1.0A − − 1.0 V IC = 25A, IB = 2.5A − − 1.8 V IC = 10A, IB = 1.0A − − 1.8 V IC = 25A, IB = 2.5A − − 2.5 V IC = 10A, VCE = 2V − − 1.8 V VCE = 10V, IC = 1A, f = 10MHz, Note 3 40 − − MHz Cob VCB = 10V, IE = 0, f = 0.1MHz − − 300 pF Rise Time tr VCC = 80V, IC = 10A, IB1 = 1A, VBE(off) = 6V − − 0.3 s Storage Time ts VCC = 80V, IC = 10A, IB1 = IB2 =1A − − 1.0 s Fall Time tf − − 0.25 s ON Characteristics (Note 2) DC Current Gain hFE Collector−Emitter Saturation Voltage VCE(sat) Base−Emitter Saturation Voltage VBE(sat) Base−Emitter ON Voltage VBE(on) Dynamic Characteristics Current Gain−Bandwidth Product fT Output Capacitance Switching Characteristics Note 2. Pulse Test: Pulse Width  300s, Duty Cycle  2%. Note 3. fT = |hfe|  ftest. .135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane .312 (7.93) Min .040 (1.02) 1.187 (30.16) Emitter .215 (5.45) .665 (16.9) .156 (3.96) Dia (2 Holes) .430 (10.92) .188 (4.8) R Max Base .525 (13.35) R Max Collector/Case