2N6385
Silicon NPN Transistor
Darlington Power Amplifier
TO−3 Type Package
Description:
The 2N6385 is a silicon NPN Darlington transistor in a TO−3 type case designed for use in low and
medium frequency power applications such as power switching, audio amplifier, hammer driver, and
shunt and series regulator.
Features:
D High Gain Darlington Performance
D DC Current Gain: hFE = 3000 (Typ) @ IC = 5A
Absolute Maximum Ratings:
Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mA
Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W
Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.571W/C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +200C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +200C
Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.75C/W
Electrical Characteristics: (TC = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
80
−
−
V
OFF Characteristics
Collector−Emitter Sustaining Voltage
Collector−Emitter Leakage Current
Emitter Cutoff Current
VCEO(sus) IC = 200mA, IB = 0, Note 1
ICEO
VCE = 80V, IB = 0
−
−
1.0
mA
ICEX
VCE = 80V, VBE(off) = 1.5V
−
−
0.3
mA
VCE = 80V, VBE(off) = 1.5V, TC = +125C
−
−
3.0
mA
VEB = 5V, IC = 0
−
−
10
mA
IEBO
Note 1. Pulse Test: Pulse Width = 300s, Duty Cycle = 2%
Electrical Characteristics (Cont’d): (TA = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
VCE = 3V, IC = 5A
1000
−
20000
VCE = 3V, IC = 10A
100
−
−
IC = 5A, IB = 10mA
−
−
2.0
V
IC = 10A, IB = 100mA
−
−
3.0
V
IC = 5A, VCE = 3V
−
−
2.8
V
IC = 10A, VCE = 3V
−
−
4.5
V
ON Characteristics (Note 1)
DC Current Gain
hFE
Collector−Emitter Saturation Voltage
Base−Emitter ON Voltage
VCE(sat)
VBE(on)
Dynamic Characteristics
Small−Signal Current Gain
hfe
VCE = 5V, IC = 1A, f = 1KHz
1000
−
−
Output Capacitance
Cob
VCB = 10V, IE = 0, f = 1MHz
−
−
200
Note 1. Pulse Test: Pulse Width = 300s, Duty Cycle = 2%
C
B
E
.135 (3.45) Max
.875 (22.2)
Dia Max
.350 (8.89)
Seating
Plane
.312 (7.93) Min
.040 (1.02)
1.187 (30.16)
Emitter
.665
(16.9)
.215 (5.45)
.430
(10.92)
.188 (4.8) R Max
Base
.525 (13.35) R Max
Collector/Case
pF
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