2N6385

2N6385 Silicon NPN Transistor Darlington Power Amplifier TO−3 Type Package Description: The 2N6385 is a silicon NPN Darlington transistor in a TO−3 type case designed for use in low and medium frequency power applications such as power switching, audio amplifier, hammer driver, and shunt and series regulator. Features: D High Gain Darlington Performance D DC Current Gain: hFE = 3000 (Typ) @ IC = 5A Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mA Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.571W/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +200C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +200C Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.75C/W Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit 80 − − V OFF Characteristics Collector−Emitter Sustaining Voltage Collector−Emitter Leakage Current Emitter Cutoff Current VCEO(sus) IC = 200mA, IB = 0, Note 1 ICEO VCE = 80V, IB = 0 − − 1.0 mA ICEX VCE = 80V, VBE(off) = 1.5V − − 0.3 mA VCE = 80V, VBE(off) = 1.5V, TC = +125C − − 3.0 mA VEB = 5V, IC = 0 − − 10 mA IEBO Note 1. Pulse Test: Pulse Width = 300s, Duty Cycle = 2% Electrical Characteristics (Cont’d): (TA = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit VCE = 3V, IC = 5A 1000 − 20000 VCE = 3V, IC = 10A 100 − − IC = 5A, IB = 10mA − − 2.0 V IC = 10A, IB = 100mA − − 3.0 V IC = 5A, VCE = 3V − − 2.8 V IC = 10A, VCE = 3V − − 4.5 V ON Characteristics (Note 1) DC Current Gain hFE Collector−Emitter Saturation Voltage Base−Emitter ON Voltage VCE(sat) VBE(on) Dynamic Characteristics Small−Signal Current Gain hfe VCE = 5V, IC = 1A, f = 1KHz 1000 − − Output Capacitance Cob VCB = 10V, IE = 0, f = 1MHz − − 200 Note 1. Pulse Test: Pulse Width = 300s, Duty Cycle = 2% C B E .135 (3.45) Max .875 (22.2) Dia Max .350 (8.89) Seating Plane .312 (7.93) Min .040 (1.02) 1.187 (30.16) Emitter .665 (16.9) .215 (5.45) .430 (10.92) .188 (4.8) R Max Base .525 (13.35) R Max Collector/Case pF