2N6387

2N6387 & 2N6388 Silicon NPN Transistors Darlington Power Amplifier TO−220 Type Package Description: The 2N6387 and 2N6388 are silicon NPN Darlington power transistors in a TO−220 type package designed for general purpose amplifier and low−speed switching applications. Features: D High DC Current Gain: hFE = 2500 Typ D Collector−Emitter Sustaining Voltage (@ 100mA): 2N6387: VCEO(sus) = 60V Min 2N6387: VCEO(sus) = 80V Min D Low Collector−Emitter Saturation Voltage: VCE(sat) = 2V Max @ IC = 5A D Monolithic Construction with Built−In Base−Emitter Shunt Resistor Absolute Maximum Ratings: (Note 1) Collector−Emitter Voltage, VCEO 2N6387 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V 2N6388 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector−Base Voltage, VCB 2N6387 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V 2N6388 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Emitter−Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mA Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.52W/C Total Power Dissipation (TA = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.016W/C Operating Junction Temperature range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +150C Storage Temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +150C Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.92C/W Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62.5C/W Note 1. Stresses exceeding those listed in the Absolute Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Electrical Characteristics: (TC = +25C, Note 2 unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit 60 − − V 80 − − V OFF Characteristics Collector−Emitter Sustaining Voltage 2N6387 VCEO(sus) IC = 200mA, IB = 0, Note 3 2N6388 Collector Cutoff Current Emitter Cutoff Current ICEO VCE = Rated Voltage, IB = 0 − − 1.0 mA ICEX VCE = Rated Voltage, VEB(off) = 1.5V − − 300 A − − 3 mA − − 5 mA TC = +125C IEBO VBE = 5V, IC = 0 hFE IC = 5A, VCE = 3V 1000 − 20000 IC = 10A, VCE = 3V 100 − − IC = 5A, IB = 0.01A − − 2 V IC = 10A, IB = 0.1A − − 3 V IC = 5A, VCE = 3V − − 2.8 V IC = 10A, VCE = 3V − − 4.5 V ON Characteristics (Note 3) DC Current Gain Collector−Emitter Saturation Voltage VCE(sat) Base−Emitter ON Voltage VBE(on) Dynamic Characteristics Small−Signal Current Gain |hfe| IC = 1A, VCE = 5V, ftest = 1MHz 20 − − Output Capacitance Cob VCB = 10V, IE = 0, f = 1MHz − − 200 Small−Signal Current Gain hfe IC = 1A, VCE = 5V, f = 1kHz 1000 − − pF Note 2. Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise specified. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Note 2. Pulse Test: Pulse Width  300s, Duty Cycle  2%. .420 (10.67) Max .110 (2.79) .147 (3.75) Dia Max .500 (12.7) Min C B .250 (6.35) Max E .070 (1.78) Max Base .100 (2.54) .500 (12.7) Max Emitter Collector/Tab