2N6426

2N6426 Silicon NPN Transistor Darlington General Purpose Amplifier TO−92 Type Package Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Total Device Dissipation (TA = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0mW/C Total Device Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12mW/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200C/W Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83.3C/W Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics Collector−Emitter Breakdown Voltage V(BR)CEO IC = 10mA, VBE = 0, Note 1 40 − − V Collector−Base Breakdown Voltage V(BR)CBO IC = 100A, IE = 0 40 − − V Emitter−Base Breakdown Voltage V(BR)EBO IE = 10A, IC = 0 12 − − V Collector Cutoff Current Emitter Cutoff Current ICES VCE = 25V, IB = 0 − − 1.0 A ICBO VCB = 30V, IE = 0 − − 50 nA IEBO VCB = 30V, IE = 0 − − 50 nA Note 1. Pulse test: Pulse Width  300s, Duty Cycle  2%. Electrical Characteristics (Cont’d): (TC = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit IC = 10mA, VCE = 5V, Note 1 20,000 − 200,000 − IC = 100mA, VCE = 5V, Note 1 30,000 − 300,000 − IC = 500mA, VCE = 5V, Note 1 20,000 − 200,000 − IC = 50mA, IB = 0.5mA − 0.71 1.2 V IC = 500mA, IB = 0.5mA − 0.9 1.5 V ON Characteristics DC Current Gain hFE Collector−Emitter Saturation Voltage VCE(sat) Base−Emitter Saturation Voltage VBE(sat) IC = 500mA, IB = 0.5mA − 1.52 2.0 V Base−Emitter On Voltage VBE(on) IC = 50mA, VCE = 5V − 1.24 1.75 V Small−Signal Characteristics Output Capacitance Cobo VCB = 10V, IE = 0, f = 1.0 MHz − 5.4 7.0 pF Input Capacitance Cibo VEB 1.0V, IC = 0, f = 1.0 MHz − 10 15 pF Input Impedance hie IC = 10mA, VCE = 5V, f = 1 kHz 100 − 2000 k Small−Signal Current Gain hfe IC = 10mA, VCE = 5V, f = 1 kHz 20,000 − − − Current Gain − High Frequency |hfe| IC = 10mA, VCE = 5V, f = 100 kHz 1.5 2.4 − − Output Admittance hoe IC = 10mA, VCE = 5V, f = 1kHz − − 1000 mhos Noise Figure NF IC = 10mA, VCE = 5V, f = 1kHz, RS = 100 k − 3.0 10 dB Note 1. Pulse test: Pulse Width  300s, Duty Cycle  2%. .135 (3.45) Min .210 (5.33) Max Seating Plane .021 (.445) Dia Max .500 (12.7) Min C B E B C .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .205 (5.2) Max .105 (2.67) Max E