2N6488

2N6488 Silicon NPN Transistor Audio Power Amp, Switch TO−220 Type Package Description: The 2N6488 is a silicon NPN power transistor in a TO−220 plastic package intended for use in general purpose amplifier and switching applications. Features: D DC Current Gain Specified to 15A: hFE = 20 − 150 @ IC = 5A = 5 (Min) @ IC = 15A D Collector−Emitter Sustaining Voltage: VCEO(sus) = 80V (Min) D High Current Gain−Bandwidth Product: fT = 5MHz (Min) @ IC = 1A Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector−Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90V Emitter−Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75W Derate Above +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6W/C Total Power Dissipation (TA = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.8W Derate Above +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0..014W/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +150C Thermal Resistance Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70C/W Max Thermal Resistance Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.67C/W Max Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter Collector−Emitter Sustaining Voltage Collector Cutoff Current Emitter Cutoff Current Symbol Test Conditions VCEO(sus) IB = 0, IC = 200mA, Note 1 Min Typ Max Unit 80 − − V VCEX) VBE = 1.5V, IC = 200mA, Note 1 90 − − V ICEO IB = 0, VCE = 40V − − 1.0 mA ICEX VEB(off) = 1.5V, VCE = 85V − − 500 A − − 5.0 A − − 1 mA IEBO TC = +150C IC = 0, VBE = 5V Note 1. Pulsed; Pulse Duration = 300s, Duty Cycle = 1.5%. Electrical Characteristics (Cont’d): (TC = +25C unless otherwise specified) Parameter Symbol DC Current Gain hFE Collector−Emitter Saturation Voltage VCE(sat) Base−Emitter ON Voltage VBE(on) Test Conditions Min Typ Max IC = 5A, VCE = 4V 20 − 150 IC = 15A, VCE = 4V 5 − − IC = 5A, IB = 0.5A − − 1.3 V IC = 10A, IB = 2.5A − − 3.5 V IC = 5A, VCE = 4V − − 1.3 V IC = 15A, VCE = 4V − − 3.5 V MHz Current−Gain Bandwidth Product fT IC = 1A, VCE = 4V, ftest = 1MHz, Note 1 5 − − Small−Signal Current Gain hfe IC = 1A, VCE = 4V, f = 1kHz 25 − − Note 1. Pulsed; Pulse Duration = 300s, Duty Cycle = 1.5%. .420 (10.67) Max .110 (2.79) .147 (3.75) Dia Max .500 (12.7) Max .250 (6.35) Max .070 (1.78) Max Base .100 (2.54) .500 (12.7) Min Emitter Collector/Tab Unit