2N6714

2N6714 Silicon NPN Transistor General Purpose Power Amp, Switch TO−237 Type Package Description: The 2N6714 is a silicon NPN power transistors in a TO−237 type package designed for general purpose power amplifier and switching applications. Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Continuous Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Power Dissipation, PD TA = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +150C Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125C/W Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62.5C/W Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Symbol Condition Min Typ Max Unit Collector−Base Breakdown Voltage V(BR)CBO IC = 1mA 40 − − V Collector−Emitter Breakdown Voltage V(BR)CEO IC = 10mA 30 − − V Emitter−Base Breakdown Voltage V(BR)EBO IE = 1mA 5 − − V Collector Cutoff Current ICBO VCB = 40V − − 0.1 A Emitter Cutoff Current IEBO VEB = 5V − − 0.1 A DC Current Gain hFE VCE = 1V, IC = 100mA 60 − − VCE = 1V, IC = 1A 50 − 250 Collector−Emitter Saturation Voltage VCE(sat) IC = 1A, IB = 100mA − − 0.5 V Base−Emitter ON Voltage VBE(on) IC = 1A, VCE = 1V − − 1.2 V VCE = 10V, IC = 50mA, f = 20MHz 50 − 500 MHz VCB = 10V, IE = 0, f = 1MHz − − 30 pF Transition Frequency fT Output Capacitance Cob .200 (5.08) .180 (4.57) .100 (2.54) E B C .180 (4.57) .594 (15.09) .018 (0.46) .015 (0.38) .050 (1.27) .050 (1.27) .050 (1.27) .140 (3.55) .090 (2.28) R