2N6725

2N6725 Silicon NPN Darlington Transistor TO−237 Type Package Description: The 2N6725 is a silicon NPN Darlington power transistors designed for amplifier applications. Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Continuous Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5A Power Dissipation, PD TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65° to +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65° to +150°C Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62.5°C/W Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Condition Min Typ Max Unit Collector−Base Breakdown Voltage V(BR)CBO IC = 1mA, IE = 0 60 − − V Collector−Emitter Breakdown Voltage V(BR)CEO IC = 1mA, IB = 0 (Note 1) 50 − − V Emitter−Base Breakdown Voltage V(BR)EBO IE = 10mA, IC = 0 10 − − V Collector Cutoff Current ICBO VCB = 30V, IE = 0 − − 1.0 μA Emitter Cutoff Current IEBO VEB = 8V, IC = 0 − − 0.1 μA IC = 200mA, IB = 2mA (Note 1) − − 1.0 V IC = 1A, IB = 2mA (Note 1) − − 1.5 V Collector−Emitter Saturation Voltage VCE(sat) Base−Emitter Saturation Voltage VBE(sat) IC = 1A, IB = 2mA (Note 1) − − 2.0 V Base−Emitter Turn−On Voltage VBE(on) IC = 1A, VCE = 5V* (Note 1) − − 2.0 V IC = 200mA, VCE = 5V* (Note 1) 25k − − IC = 500mA, VCE = 5V* (Note 1) 15k − − IC = 1A, VCE = 5V* (Note 1) 4k − 40k VCB = 10V, f = 1MHz − − 10 Static Forward Current Transfer Ratio Collector Base Capacitance hFE CCB Note 1. Measured under pulsed conditions. Pulse width=300ms. Duty cycle ≤ 2% pF .200 (5.08) .180 (4.57) .100 (2.54) E B C .180 (4.57) .594 (15.09) .018 (0.46) .015 (0.38) .050 (1.27) .050 (1.27) .050 (1.27) .140 (3.55) .090 (2.28) R