2N7000

2N7000 N−Ch, Enhancement Mode Field Effect Transistor TO−92 Type Package Features: D High Density Cell Design for Low RDS(ON) D Voltage Controlled Small Signal Switch D Rugged and Reliable D High Saturation Current Capability D G S Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Drain−Source Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Drain−Gate Voltage (RGS  1M), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Gate−Source Voltage, VGS Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Non−Repetitive (tp  50s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V Maximum Drain Current, ID Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Maximum Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mW Derate above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.2mW/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C Thermal Resistance, Junction−to−Ambient, Rth(JA) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 312.5C/W Maximum Lead Temperature for Soldering Purposes, 1/16” from Case, 10sec), TL . . . . . . . +300C Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit VGS = 0V, ID = 10A 60 − − V VDS = 48V, VGS = 0 − − 1.0 A − − 1.0 mA OFF Characteristics Drain−Source Breakdown Voltage BVDss Zero−Gate−Voltage Drain Current IDSS TJ = +125C Gate−Body Leakage Current, Forward IGSSF VGSF = 15V, VDS = 0 − − 10 nA Gate−Body Leakage Current, Reverse IGSSR VGSF = −15V, VDS = 0 − − −10 nA Electrical Characteristics (Cont’d): (TA = +25C unless otherwise specified) ON Characteristics (Note 1) Gate Threshold Voltage VGS(th) ID = 1mA, VDS = VGS 0.8 2.1 3.0 V Static Drain−Source ON Resistance rDS(on) VGS = 10V, ID = 500mA − 1.2 5.0  − 1.9 9.0  VGS = 4.5V, ID = 75mA − 1.8 5.3  VGS = 10V, ID = 500mA − 0.6 2.5 V VGS = 4.5V, ID = 75mA − 0.14 0.4 V ID(on) VGS = 4.5V, VDS = 10V 75 600 − mA gFS VDS = 10V, ID = 200mA 100 320 − mS Input Capacitance Ciss VDS = 25V, VGS = 0V, f = 1MHz − 20 50 pF Reverse Transfer Capacitance Coss − 11 25 pF Output Capacitance Crss − 4 5 pF − − 10 ns − − 10 ns Drain−Source ON−Voltage ON−State Drain Current Forward Transconductance VDS(on) TJ = +125C Dynamic Characteristics Turn−On Time ton Turn−Off Time toff VDD = 15V, RL = 25, ID = 500mA, VGS = 10V, RGEN = 25 Note 1. Pulse Test: Pulse Width  300s, Duty Cycle  2%. .135 (3.45) Min .210 (5.33) Max Seating Plane .500 (12.7) Min .021 (.445) Dia Max S G D .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .205 (5.2) Max .105 (2.67) Max