2N7002

2N7002 N−Ch, Enhancement Mode Field Effect Transistor SOT−23 Type Package Features: D High Density Cell Design for Low RDS(ON) D Voltage Controlled Small Signal Switch D Rugged and Reliable D High Saturation Current Capability D G S Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Drain−Source Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Drain−Gate Voltage (RGS  1M), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Gate−Source Voltage, VGS Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Non−Repetitive (tp  50s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V Maximum Drain Current, ID Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 115mA Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800mA Maximum Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW Derate above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.6mW/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C Thermal Resistance, Junction−to−Ambient, Rth(JA) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625C/W Maximum Lead Temperature (During Soldering, 1/16” from Case, 10sec), TL . . . . . . . . . . . . +300C Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit VGS = 0V, ID = 10A 60 − − V VDS = 60V, VGS = 0 − − 1.0 A − − 0.5 mA OFF Characteristics Drain−Source Breakdown Voltage BVDss Zero−Gate−Voltage Drain Current IDSS TJ = +125C Gate−Body Leakage Current, Forward IGSSF VGSF = 20V, VDS = 0 − − 100 nA Gate−Body Leakage Current, Reverse IGSSR VGSF = −20V, VDS = 0 − − −100 nA Electrical Characteristics (Cont’d): (TA = +25C unless otherwise specified) ON Characteristics (Note 1) Gate Threshold Voltage VGS(th) ID = 250A, VDS = VGS 1.0 2.1 2.5 V Static Drain−Source ON Resistance rDS(on) VGS = 10V, ID = 500mA − 1.2 7.5  − 1.7 13.5  − 1.7 7.5  − 2.4 13.5  VGS = 10V, ID = 500mA − 0.6 3.75 V VGS = 5V, ID = 50mA − 0.09 1.5 V VGS = 5V, ID = 50mA Drain−Source ON−Voltage VDS(on) ON−State Drain Current TJ = +100C TJ = +100C ID(on) VGS = 10V, VDS  2 VDS(on) 500 2700 − mA gFS VDS  2 VDS(on), ID = 200mA 80 320 − mS Input Capacitance Ciss VDS = 25V, VGS = 0V, f = 1MHz − 20 50 pF Reverse Transfer Capacitance Coss − 11 25 pF Output Capacitance Crss − 4 5 pF − − 20 ns − − 20 ns IS − − 115 mA Maximum Pulsed Drain−Source Diode Forward Current ISM − − 0.8 A Drain−Source Diode Forward Voltage VSD − 0.88 1.5 V Forward Transconductance Dynamic Characteristics Turn−On Time ton Turn−Off Time toff VDD = 30V, RL = 150, ID = 200mA, VGS = 10V, RGEN = 25 Drain−Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain−Source Diode Forward Current VGS = 0V, IS = 115mA, Note 1 Note 1. Pulse Test: Pulse Width  300s, Duty Cycle  2%. .016 (0.48) .098 (2.5) Max D G S .037 (0.95) .074 (1.9) .118 (3.0) Max .051 (1.3) .043 (1.1) .007 (0.2)