BC547A

BC547A Silicon NPN Transistor Audio Amplifier, Switch TO−92 Type Package Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V Collector−Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V Emitter−Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA Total Device Dissipation (TA = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0mW/C Total Device Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12mW/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83.3C/W Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200C/W Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics Collector−Emitter Breakdown Voltage V(BR)CEO IC = 1mA, IB = 0 45 − − V Collector−Base Breakdown Voltage V(BR)CBO IC = 100A, IE = 0 50 − − V Emitter−Base Breakdown Voltage V(BR)EBO IE = 10A, IC = 0 6 − − V nA Collector Cutoff Current ICES VCE = 50V, VEB = 0V − 0.2 15 hFE VCE = 5V, IC = 10A − 90 − VCE = 5V, IC = 2mA 110 180 220 VCE = 5V, IC = 100mA − 120 − IC = 10mA, IB = 0.5mA − 0.09 0.25 V IC = 100mA, IB = 5mA − 0.2 0.6 V IC = 10mA, IB = See Note 1 − 0.3 0.6 V − 0.7 − V ON Characteristics DC Current Gain Collector−Emitter Saturation Voltage VCE(sat) Base−Emitter Saturation Voltage VBE(sat) IC = 10mA, IB = 0.5mA Base−Emitter On Voltage VBE(on) IC = 2mA, VCE = 5V 0.55 − 0.7 V IC = 10mA, VCE = 5V − − 0.77 V Note 1. IB is value for which IC = 11mA at VCE = 1V. Electrical Characteristics, (Cont’d): (TA = +25C unless otherwise specified) Small−Signal Characteristics Current Gain−Bandwidth Product fT IC = 10mA, VCE = 5V, f = 100MHz 150 300 − MHz Output Capacitance Cobo VCB = 10V, IC = 0, f = 1.0MHz − 1.7 4.5 pF Input Capacitance Cibo VEB = 0.5V, IC = 0, f = 1.0MHz − 10 − pF Small−Signal Current Gain hfe IC = 2mA, VCE = 5V, f = 1kHz 125 220 260 Noise Figure NF IC = 0.2mA, VCE = 5V, Rs = 2kW, f = 1kHz, f = 200Hz − 2 10 .135 (3.45) Min .210 (5.33) Max Seating Plane .021 (.445) Dia Max .500 (12.7) Min E B C .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .105 (2.67) Max .205 (5.2) Max dB