BD911

BD911 (NPN) & BD912 (PNP) Silicon Complementary Transistors Audio Power Amp, Switch TO−220 Type Package Description: The BD911 (NPN) and BD912 (PNP) are silicon complementary power transistors in a TO−220 plastic package intended for use in power amplifier and switching applications. Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90W Derate Above +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.72W/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +150C Thermal Resistance Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.38C/W Max Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit VCEO(sus) IB = 0, IC = 50mA, Note 1 100 − − V OFF Characteristics Collector−Emitter Sustaining Voltage Collector Cutoff Current Emitter Cutoff Current ICEO IB = 0, VCE = 50V − − 1 mA ICBO IE = 0, VCB = 100V − − 0.5 mA IEBO IC = 0, VEB = 5V − − 1 mA Note 1. Pulse Test; Pulse width = 300s, Duty Cycle  2%. Electrical Characteristics (Cont’d): (TC = +25C unless otherwise specified) Parameter Symbol ON Characteristics (Note 1) DC Current Gain hFE Collector−Emitter Saturation Voltage VCE(sat) Base−Emitter Saturation Voltage Base−Emitter ON Voltage Dynamic Characteristics Current Gain−Bandwidth Product VBE(sat) VBE(on) fT Test Conditions Min Typ Max Unit IC = 0.5A, VCE = 4V IC = 5A, VCE = 4V IC = 10A, VCE = 4V IC = 5A, IB = 0.5A IC = 10A, IB = 2.5A IC = 10A, IB = 2.5A IC = 5A, VCE = 4V 40 15 5 − − − − − − − − − − − 250 150 − 1 3 2.5 1.5 V V V V IC = 500mA, VCE = 4V, f = 1MHz, Note 2 3 − − MHz Note 1. Pulse Test; Pulse width = 300s, Duty Cycle  2%. Note 2. fT = |hfe|  ftest. .420 (10.67) Max .110 (2.79) .147 (3.75) Dia Max .500 (12.7) Max .250 (6.35) Max .070 (1.78) Max Base .100 (2.54) .500 (12.7) Min Emitter Collector/Tab