BDV64 (PNP) & BDV65 (NPN)
Silicon Complementary Transistors
Darlington Power Amp, Switch
TO−3PN Type Package
Description:
The BDV64 (PNP) and BDV65 (NPN) are silicon Darlington complementary power transistors in a
TO−3PN type package designed for general purpose amplifier and low speed switching applications.
Features:
D Collector−Emitter Sustaining Voltage: VCEO(sus) = 60V Min
D Collector−Emitter Saturation Voltage: VCE(sat) = 2V Max @ IC = 5A
D Monolithic Construction with Built−In Base−Emitter Shunt Resistor
Absolute Maximum Ratings:
Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Collector−Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Emitter−Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Total Device Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125W
Derate Above +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W/C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +150C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +150C
Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0C/W
Electrical Characteristics: (TC = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
60
−
−
V
OFF Characteristics
Collector−Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
VCEO(sus) IC = 30mA, IB = 0, Note 1
ICEO
VCE = 30V, IB = 0
−
−
1.0
mA
ICBO
VCB = 60V, IE = 0
−
−
0.4
mA
IEBO
VEB = 5V
−
−
5.0
mA
Note 1. Pulse Test: Pulse Width = 300s, Duty Cycle 2%.
Electrical Characteristics (Cont’d): (TC = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
IC = 1A, VCE = 4V
−
2500
−
IC = 5A, VCE = 4V
1000
−
−
IC = 10A, VCE = 4V
−
500
−
Unit
ON Characteristics (Note 1)
DC Current Gain
hFE
Collector−Emitter Saturation Voltage
VCE(sat)
IC = 5A, IB = 20mA
−
−
2.0
V
Base−Emitter ON Voltage
VBE(on)
IC = 5A, VCE = 4V
−
−
2.5
V
Dynamic Characteristics
Small−Signal Current Gain
hfe
IC = 5A, VCE = 4V, f − 1MHz
40
−
−
Output Capacitance
Cob
VCB = 10V, IE = 0, f = 1MHz
−
−
300
Note 1. Pulse Test: Pulse Width = 300s, Duty Cycle 2%.
BDV65
BDV64
C
C
B
B
E
E
Alternat Case
.614 (15.6)
.189
(4.8)
.787
(20.0)
.670 (17.0) Max
.197 (5.0)
.866
(22.0)
.590
(15.0)
.138 (3.5) Dia
B
.177
(4.5)
.889
(22.6)
B
.215 (5.45)
.590
(15.0)
.130 (3.3)
Dia
C
E
C
.747
(19.0)
Min
E
.215 (5.47) .025 (0.65)
pF
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