BDV65

BDV64 (PNP) & BDV65 (NPN) Silicon Complementary Transistors Darlington Power Amp, Switch TO−3PN Type Package Description: The BDV64 (PNP) and BDV65 (NPN) are silicon Darlington complementary power transistors in a TO−3PN type package designed for general purpose amplifier and low speed switching applications. Features: D Collector−Emitter Sustaining Voltage: VCEO(sus) = 60V Min D Collector−Emitter Saturation Voltage: VCE(sat) = 2V Max @ IC = 5A D Monolithic Construction with Built−In Base−Emitter Shunt Resistor Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Collector−Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Emitter−Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Total Device Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125W Derate Above +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +150C Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0C/W Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit 60 − − V OFF Characteristics Collector−Emitter Sustaining Voltage Collector Cutoff Current Emitter Cutoff Current VCEO(sus) IC = 30mA, IB = 0, Note 1 ICEO VCE = 30V, IB = 0 − − 1.0 mA ICBO VCB = 60V, IE = 0 − − 0.4 mA IEBO VEB = 5V − − 5.0 mA Note 1. Pulse Test: Pulse Width = 300s, Duty Cycle  2%. Electrical Characteristics (Cont’d): (TC = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max IC = 1A, VCE = 4V − 2500 − IC = 5A, VCE = 4V 1000 − − IC = 10A, VCE = 4V − 500 − Unit ON Characteristics (Note 1) DC Current Gain hFE Collector−Emitter Saturation Voltage VCE(sat) IC = 5A, IB = 20mA − − 2.0 V Base−Emitter ON Voltage VBE(on) IC = 5A, VCE = 4V − − 2.5 V Dynamic Characteristics Small−Signal Current Gain hfe IC = 5A, VCE = 4V, f − 1MHz 40 − − Output Capacitance Cob VCB = 10V, IE = 0, f = 1MHz − − 300 Note 1. Pulse Test: Pulse Width = 300s, Duty Cycle  2%. BDV65 BDV64 C C B B E E Alternat Case .614 (15.6) .189 (4.8) .787 (20.0) .670 (17.0) Max .197 (5.0) .866 (22.0) .590 (15.0) .138 (3.5) Dia B .177 (4.5) .889 (22.6) B .215 (5.45) .590 (15.0) .130 (3.3) Dia C E C .747 (19.0) Min E .215 (5.47) .025 (0.65) pF