BU406D

BU406D Silicon NPN Transistor Power Amp, High Voltage, Switch TO−220 Type Package Description: The BU406D is a silicon NPN transistor in a TO−220 type package designed for high−voltage, high− speed horizontal deflection output stages of TVs and CRTs. Features: D Collector−Emitter Sustaining Voltage: VCEV = 400V (Min) D Low Saturation Voltage: VCE(sat) = 1V (Max) @ IC = 5A D Fast Switching Speed: tf = 0.75s (Max) Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V Collector−Emitter Voltage, VCEV . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Continuous Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +150C Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.08C/W Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit 200 − − V Collector−Emitter Sustaining Voltage VCEO(sus) IC = 50mA, IB = 0 Collector−Emitter Saturation Voltage VCE(sat) IC = 5A, IB = 650mA − − 1.0 V Base−Emitter Saturation Voltage VBE(sat) IC = 5A, IB = 650mA − − 1.3 V DC Current Gain hFE IC = 2A, VCE = 5V − 15 − Collector Cutoff Current ICEV VCE = 400V, VBE = −1.5V − − 15 mA Emitter Cutoff Current IEBO VEB = 6V, IC = 0 − − 400 mA IC = 500mA, VCE = 10V, f = 1MHz 10 − − MHz IF = 5A − − 1.5 V VCC = 40V, IC = 5A, −IB1 = 650mA − − 0.75 s Current Gain−Bandwidth Product Collector−Emitter Diode Forward Voltage Fall Time fT VCEF tf Note 1. Pulse Test: Pulse Width  300s, Duty Cycle  2%. Rev. 8−20 .402 (10.2) Max .626 (15.9) Max .500 (12.7) Min Base .100 (2.54) Emitter Collector/Tab