BU806

BU806 Silicon NPN Transistor Fast Switching Power Darlington TO−220 Type Package Description: The BU806 is a silicon epitaxial planer NPN power Darlington transistor in a TO−220 type package with an integrated base−emitter speed−up diode designed for use in high voltage, high current, fast switching applications. In particular, the BU806 can be used in horizontal output stages of 110 CRT video displays and is primarily intended for large screen displays. Absolute Maximum Ratings: Collector−Base Voltage (IE = 0), VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V Collector−Emitter Voltage (VBE = −6V), VCEV . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V Collector−Emitter Voltage (IB = 0), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V Emitter−Base Voltage (IC = 0), VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Damper Diode Peak Forward Current, IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Total Power Dissipation (TC  +25C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +150C Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.08C/W Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70C/W Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter Collector Cutoff Current Symbol Test Conditions Min Typ Max Unit ICES VCE = 400V, VBE = 0 − − 100 A ICEV VCE = 400V, VBE = −6V − − 100 A IEBO VEB = 6V, IC = 0 − − 3 mA Collector−Emitter Sustaining Voltage VCEO(sus) IC = 100mA, IB = 0, Note 1 200 − − V Collector−Emitter Saturation Voltage VCE(sat) IC = 5A, IB = 50mA, Note 1 − − −1.5 V Base−Emitter Saturation Voltage VBE(sat) IC = 5A, IB = 50mA, Note 1 − − 2.0 V IC = 3A, VCE = 5V − 3500 − Emitter Cutoff Current DC Current Gain hFE Note 1. Pulse test: Pulse Duration = 300s, Duty Cycle = 1.5%. Electrical Characteristics (Cont’d): (TC = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Damper Diode Forward Voltage VF IF = 4A, Note 1 − − 2 V Turn−Off Time toff IC = 5A, IB1 = 50mA − 0.4 1.0 s Turn−On Time ton − 0.35 − s Storage Time ts IC = 5A, IB1 = 50mA, IB2 = −500mA, VCC = 100V − 0.55 − s Fall Time tf − 0.20 − s Resistive Load Note 1. Pulse test: Pulse Duration = 300s, Duty Cycle = 1.5%. .420 (10.67) Max .110 (2.79) .147 (3.75) Dia Max .500 (12.7) Max C B D2 R1 .250 (6.35) Max D1 R2 E .070 (1.78) Max Base .100 (2.54) .500 (12.7) Min Emitter Collector/Tab