D44C11

D44C11 Silicon NPN Transistor Power Amp Driver, Output, Switch TO−220 Type Package Description: The D44C11 silicon NPN transistors in a TO−220 type package designed for various specific and general purpose amplifications such as output and driver stages of amplifiers operating at frequencies from DC to greater than 1.0MHz, series, shunt and switching regulators, low and high frequency inverters/converters and many others. Features: D Very Low Collector−Emitter Saturation Voltage D excellent Linearity D Fast Switching Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector−Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90V Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30W Derate Above +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.24W/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.8C/W Electrical Characteristics: (TC = +25C, Note 3 unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics Collector Cutoff Current ICES VCE = 90V − − 10 A Emitter Cutoff Current IEBO VEB = 5V, IC = 0 − − 100 A hFE VCE = 1V, IC = 200mA 100 − 220 VCE = 1V, IC = 2A 20 − − ON Characteristics (Note 1) DC Current Gain Collector−Emitter Saturation Voltage VCE(sat) IC = 1A, IB = 50mA − − 0.5 V Base−Emitter Saturation Voltage VBE(sat) IC = 1A, IB = 100mA − − 1.3 V fT IC = 20mA, VCE = 4V, f = 1MHz, Note 2 − 50 − MHz Rise Time tr − − 0.3 s Storage Time ts IC = 1A, VCC = 20V, IB1 = −IB2 = 100mA − − 0.7 s Fall Time tf − − 0.4 s Dynamic Characteristics Current−Gain Bandwidth Product Switching Times Note 1. Pulse Test: Pulse width = 300s, Duty Cycle  2%. Note 2. fT = |hfe|  ftest. .420 (10.67) Max .110 (2.79) .147 (3.75) Dia Max .500 (12.7) Max .250 (6.35) Max .070 (1.78) Max Base .100 (2.54) .500 (12.7) Min Emitter Collector/Tab