MJ10004

MJ10004 Silicon NPN Transistor HV Darlington Power Amp, Switch w/Base−Emitter Speedup Diode TO−3 Type Package Description: The MJ10004 is a silicon NPN Darlington transistor in a TO−3 type package designed for high voltage, high−speed, power switching in inductive circuits where fall−time is critical. It is particularly suited for line operated switch−mode applications. Applications: D Switching Regulators D Inverters D Solenoid and Relay Drivers D Motor Controls Absolute Maximum Ratings: Collector−Emitter Voltage, VCEV . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450V Collector−Emitter Voltage, VCEX(sus) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V Collector−Emitter Voltage, VCEO(sus) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350V Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5A Total Power Dissipation, PD TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175W TC = +100C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W Derate Above +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +200C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +200C Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0C/W Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit 350 − − V VCEV = 450V, VBE(off) = 1.5V − − 0.25 mA VCEV = 450V, VBE(off) = 1.5V, TC = +100C − − 5.0 mA ICER VCE= 450V, RBE= 50, TC = +100C − − 5.0 mA IEBO VEB = 2V, IC = 0 − − 175 mA OFF Characteristics Collector−Emitter Sustaining Voltage Collector Cutoff Current Emitter Cutoff Current VCEO(sus) IC = 250mA, IB = 0, Vclamp = 350V ICEV Electrical Characteristics (Cont’d): (TC = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit VCE = 5V, IC = 5A 50 − 600 VCE = 5V, IC = 10A 40 − 400 IC = 10A, IB = 400mA − − 1.9 V IC = 10A, IB = 400mA, TC = +100C − − 2.0 V IC = 20A, IB = 2A − − 3.0 V IC = 10A, IB = 400mA − − 2.5 V IC = 10A, IB = 400mA, TC = +100C − − 2.5 V VF IF = 10A − − 5.0 V Small−Signal Current Gain |hfe| VCE = 10V, IC = 1A, ftest = 1MHz, Note 2 10 − − Output Capacitance Cob VCB = 10V, IE = 0, ftest = 100kHz 100 − − pF − − 0.2 s − − 0.6 s ON Characteristics (Note 1) DC Current Gain Collector−Emitter Saturation Voltage Base−Emitter Saturation Voltage hFE VCE(sat) VBE(sat) Diode Forward Voltage Dynamic Characteristics Switching Characteristics Delay Time td Rise Time tr Storage Time ts − − 1.5 s Fall Time tf − − 0.5 s VCC = 250V, IC = 10A, IB1 = 400mA, VBE(off) = 5V, tp = 50s, Duty Cycle  2% Note 1. Pulse test: Pulse Width = 300s, Duty Cycle  2%. Note 2. fT = |hfe|  ftest .135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane C B .312 (7.93) Min E Emitter .040 (1.02) 1.187 (30.16) .665 (16.9) .215 (5.45) .156 (3.96) Dia (2 Holes) .430 (10.92) .188 (4.8) R Max Base .525 (13.35) R Max Collector/Case