MJ10007

MJ10007 Silicon NPN Transistor HV Darlington Power Amp, Switch TO−3 Type Package Description: The MJ10007 is a silicon NPN Darlington transistor in a TO−3 type package designed for high voltage, high−speed, power switching in inductive circuits where fall−time is critical. It is particularly suited for line operated switch−mode applications. Applications: D Switching Regulators D Inverters D Solenoid and Relay Drivers Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO(sus) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V Collector−Emitter Voltage, VCEX(sus) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450V Collector−Emitter Voltage, VCEV . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V Emitter−Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A Base Current, IB Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0A Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150W Derate Above +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.86W/C Total Power Dissipation (TC = +100C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +200C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +200C Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.17C/W Lead Temperature (During Soldering, 1/8” from case, 5sec), TL . . . . . . . . . . . . . . . . . . . . . . . +275C Note 1. Pulse test: Pulse Width = 5ms, Duty Cycle  10%. Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit VCEO(sus) IC = 250mA, IB = 0, Vclamp = 400V 400 − − V VCEX(sus) IC = 1A, Vclamp = 450V, TC = +100C 450 − − V IC = 5A, Vclamp = 450V, TC = +100C 325 − − V VCEV = 500V, VBE(off) = 1.5V − − 0.25 mA VCEV = 500V, VBE(off) = 1.5V, TC = +100C − − 5.0 mA ICER VCEV= 500V, RBE= 50, TC = +100C − − 5.0 mA IEBO VEB = 8V, IC = 0 − − 175 mA hFE VCE = 5V, IC = 2.5A 40 − 500 VCE = 5V, IC = 5A 30 − 300 IC = 5A, IB = 250mA − − 1.9 V IC = 5A, IB = 250mA, TC = +100C − − 2.0 V IC = 10A, IB = 1A − − 2.9 V IC = 5.2A, IB = 250mA − − 2.5 V IC = 5A, IB = 250mA, TC = +100C − − 2.5 V VF IF = 5A, Note 3 − 3 5 V Small−Signal Current Gain hfe VCE = 10V, IC = 1A, ftest = 1MHz 10 − − Output Capacitance Cob VCB = 50V, IE = 0, ftest = 100kHz 60 − 275 pF VCC = 250V, IC = 5A, IB1 = 250mA, VBE(off) = 5V, tp = 50s, Duty Cycle  2% − 0.05 0.2 s − 0.25 0.6 s OFF Characteristics (Note 2) Collector−Emitter Sustaining Voltage Collector Cutoff Current Emitter Cutoff Current ICEV ON Characteristics (Note 3) DC Current Gain Collector−Emitter Saturation Voltage Base−Emitter Saturation Voltage Diode Forward Voltage VCE(sat) VBE(sat) Dynamic Characteristics Switching Characteristics (Resistive Load) Delay Time td Rise Time tr Storage Time ts − 1.2 3.0 s Fall Time tf − 0.6 1.5 s IC = 5A Peak, Vclamp = 450V, IB1 = 250mA, VBE(off) = 5V, TC = +100C − 2.1 5.0 s − 1.3 3.3 s IC = 5A Peak, Vclamp = 450V, IB1 = 250mA, VBE(off) = 5V, TC = +25C − 0.92 − s − 0.5 − s Switching Characteristics (Inductive Load, Clamped) Storage Time tsv Crossover Time tc Storage Time tsv Crossover Time tc Note 2. Pulse test: Pulse Width = 300s, Duty Cycle  2%. Note 3. The internal Collector−Emitter diode can eliminate the need for an external diode to clamp inductive loads. Tests have shown that the Forward Recovery Voltage (VF) of this diode is comparable to that of typical fast recovery rectifiers. C B E .135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane .312 (7.93) Min Emitter .040 (1.02) 1.187 (30.16) .665 (16.9) .215 (5.45) .156 (3.96) Dia (2 Holes) .430 (10.92) .188 (4.8) R Max Base .525 (13.35) R Max Collector/Case