MJ11028

MJ11028 Silicon Darlington NPN Transistor High Current, General Purpose TO=3 Type Package Description: The MJ11028 i a silicon Darlington NPN transistor in a TO−3 type package designed for use as an output device in general purpose amplifier applications. Features: D High Gain Darlington Performance D High DC Current Gain: hFE = 1000 (Min) @ IC = 25A hFE = 400 (Min) @ IC = 50A w D Monolithic Construction /Built−In Base−Emitter Shunt Resistor Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Collector−Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100A Continuous Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300W Derate Above 25C @ TC = +100C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.71W/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +200C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +200C Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.584C/W Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit 60 − − V OFF Characteristics Collector−Emitter Sustaining Voltage VCEO(sus) IC = 100mA, IB = 0, Note 1 Collector Cutoff Current ICEO VCE = 50V, IB = 0 − − 2 mA Collector−Emitter Leakage Current ICER VCE = 60V, RBE = 1k − − 2 mA VCE = 60V, RBE = 1k, TC = +125C − − 10 mA VBE = 5V, IC = 0 − − 5 mA Emitter Cutoff Current IEBO Note 1. Pulse Test: Pulse Width = 300s, Duty Cycle  2%. Electrical Characteristics (Cont’d): (TC = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit IC = 25A, VCE = 5V 1000 − 18000 IC = 50A, VCE = 5V 400 − − IC = 25A, IB = 250mA − − 2.5 V IC = 50A, IB = 500mA − − 3.5 V IC = 25A, IB = 200mA − − 3.0 V IC = 50A, IB = 300mA − − 4.5 V IC = 10A, VCE = 3V, f = 1.0MHz 4 − − ON Characteristics (Note 1) DC Current Gain hFE Collector−Emitter Saturation Voltage VCE(sat) Base−Emitter Saturation Voltage VBE(sat) Dynamic Characteristics Small−Signal Current Gain |hfe| Note 1. Pulse Test: Pulse Width = 300s, Duty Cycle  2%. Note 2. fT = |hfe|  ftest .135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane C B .312 (7.93) Min Emitter E .215 (5.45) .061 (1.55) Max 1.187 (30.16) .665 (16.9) .156 (3.96) Dia (2 Holes) .430 (10.92) .188 (4.8) R Max Base .525 (13.35) R Max Collector/Case