MJ11032

MJ11032 (NPN) & MJ11033 (PNP) Silicon Darlington Transistors High Current, General Purpose TO−3 Type Package Description: The MJ11032 (NPN) and MJ11033 (PNP) are silicon complementary Darlington transistors in a TO−3 type package designed for use as output devices in general purpose amplifier applications. Features: D High Gain Darlington Performance D High DC Current Gain: hFE = 1000 (Min) @ IC = 25A hFE = 400 (Min) @ IC = 50A w D Monolithic Construction /Built−In Base−Emitter Shunt Resistor Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V Collector−Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100A Continuous Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300W Derate Above 25C @ TC = +100C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.71W/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +200C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +200C Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.584C/W Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit VCEO(sus) IC = 100mA, IB = 0, Note 1 120 − − V OFF Characteristics Collector−Emitter Sustaining Voltage Collector Cutoff Current ICEO VCE = 50V, IB = 0 − − 2 mA Collector−Emitter Leakage Current ICER VCE = 120V, RBE = 1k − − 2 mA VCE = 120V, RBE = 1k, TC = +125C − − 10 mA VBE = 5V, IC = 0 − − 5 mA Emitter Cutoff Current IEBO Note 1. Pulse Test: Pulse Width = 300s, Duty Cycle  2%. Electrical Characteristics (Cont’d): (TC = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit IC = 25A, VCE = 5V 1000 − 18000 IC = 50A, VCE = 5V 400 − − IC = 25A, IB = 250mA − − 2.5 V IC = 50A, IB = 500mA − − 3.5 V IC = 25A, IB = 200mA − − 3.0 V IC = 50A, IB = 300mA − − 4.5 V IC = 10A, VCE = 3V, f = 1.0MHz 4 − − ON Characteristics (Note 1) DC Current Gain hFE Collector−Emitter Saturation Voltage Base−Emitter Saturation Voltage VCE(sat) VBE(sat) Dynamic Characteristics Small−Signal Current Gain |hfe| Note 1. Pulse Test: Pulse Width = 300s, Duty Cycle  2%. Note 2. fT = |hfe|  ftest Schematic Diagram C C B B E E NPN PNP .135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane .312 (7.93) Min Emitter .215 (5.45) .061 (1.55) Max 1.187 (30.16) .665 (16.9) .156 (3.96) Dia (2 Holes) .430 (10.92) .188 (4.8) R Max Base .525 (13.35) R Max Collector/Case