MJ15016

MJ15015 (NPN) & MJ15016 (PNP) Silicon Complementary Transistors General Purpose High Power Audio, Disk Head Positioner for Linear Applications Description: The MJ15015 (NPN) and MJ15016 (PNP) are complementary silicon power transistors in a TO3 type package designed for high power audio, disk head positioners, and other linear applications. Features: D High Safe Operating Area D High Current−Gain − Bandwidth Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V Collector−Emitter Voltage Base, VCEV . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V Collector Current − Continuous, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A Continuous Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7A Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.03W/°C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65° to +200°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65° to +200°C Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.52 to 0.98°C/W Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit 120 − − V OFF Characteristics Collector−Emitter Sustaining Voltage Collector Cutoff Current Emitter Cutoff Current VCEO(sus) IC = 100mA, IB = 0, Note 3 ICEO VCE = 60V, VBE(off) = 0V − − 0.1 mA ICEV VCEV = Rated Value, VBE(off) = 1.5V, Note 3 − − 1 mA ICEV VCEV = Rated Value, VBE(off) = 1.5V, TC = 150°C − − 6 mA IEBO VEB = 7V, IC = 0 − − 0.2 mA Electrical Characteristics, Cont’d: (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit A Second Breakdown Second Breakdown Collector Current with Base Forward Bias IS/b VCE = 60V, Note 1 3 − − hFE VCE = 2V, IC = 4A 10 − 70 VCE = 4V, IC = 4A 20 − 70 VCE = 4V, IC = 10A 5 − − IC = 4A, IB = 400mA − − 1.1 V IC = 10A, IB = 3.3A − − 3.0 V IC = 15A, IB = 7A − − 5.0 V VCE = 4V, IC = 4A 0.7 − 1.8 V VCE = 4V, IC = 1A, f = 1MHz 0.8 − 6 MHz 2.2 − 18 MHz 60 − 600 pF ON Characteristics DC Current Gain VCE(sat) Collector−Emitter Saturation Voltage Base−Emitter On Voltage VBE(on) Dynamic Characteristics Current−Gain − Bandwidth Product MJ15015 fT MJ15016 Output Capacitance Cob VCB = 10V, IE = 0, f = 1MHz Note 1. Pulse Test: Pulse Width = 300μs, Duty Cycle ≤ 2%. .135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane .312 (7.93) Min Emitter .215 (5.45) .040 (1.02) 1.187 (30.16) .665 (16.9) .156 (3.96) Dia (2 Holes) .430 (10.92) .188 (4.8) R Max Base .525 (13.35) R Max Collector/Case